Indlela entsha yokuhlanganisa izendlalelo zama-semiconductors amancane njengama-nanometer ambalwa ayiholelanga nje ekutholakaleni kwesayensi kodwa futhi nohlobo olusha lwe-transistor yamadivayisi kagesi anamandla amakhulu. Umphumela, owanyatheliswa ku-Applied Physics Letters, uvuse isithakazelo esikhulu.
Lokhu kufezwa kuwumphumela wokubambisana okuseduze phakathi kososayensi e-Linköping University kanye ne-SweGaN, inkampani ephuma ocwaningweni lwesayensi yezinto zokwakha e-LiU. Le nkampani ikhiqiza izingxenye ze-elekthronikhi ezenzelwe wena nge-gallium nitride.
I-Gallium nitride, i-GaN, iyi-semiconductor esetshenziselwa ama-diode akhipha ukukhanya kahle. Nokho, ingaba usizo nakwezinye izinhlelo zokusebenza, njenge-transistors, njengoba ingamelana namazinga okushisa aphezulu kanye namandla wamanje kunezinye i-semiconductor eziningi. Lezi yizimpawu ezibalulekile zezingxenye ze-elekthronikhi zesikhathi esizayo, ikakhulukazi lezo ezisetshenziswa ezimotweni zikagesi.
Umhwamuko we-gallium nitride uvunyelwe ukuthi ujiyele ku-wafer ye-silicon carbide, wakhe uqweqwe oluncane. Indlela lapho kukhuliswa khona into eyodwa yekristalu endaweni engaphansi kwenye yaziwa ngokuthi “i-epitaxy.” Le ndlela ivame ukusetshenziswa embonini ye-semiconductor ngoba inikeza inkululeko enkulu ekunqumeni kokubili isakhiwo sekristalu kanye nokwakheka kwamakhemikhali kwefilimu ye-nanometer eyakhiwe.
Inhlanganisela ye-gallium nitride, i-GaN, ne-silicon carbide, i-SiC (zombili ezingamelana nezinkundla zikagesi ezinamandla), iqinisekisa ukuthi amasekethe afanele ukusetshenziswa lapho kudingeka khona amandla aphezulu.
Ukulingana ebusweni phakathi kwezinto ezimbili zekristalu, i-gallium nitride kanye ne-silicon carbide, nokho, kubi. Ama-athomu agcina engahambisani, okuholela ekwehlulekeni kwe-transistor. Lokhu kuye kwaxazululwa ucwaningo, olwaholela esixazululweni sezentengiselwano, lapho kwabekwa khona ungqimba oluncane kakhulu lwe-aluminium nitride phakathi kwezingqimba ezimbili.
Onjiniyela baseSweGaN baqaphela ngengozi ukuthi ama-transistors abo angabhekana namandla amakhulu kakhulu ensimu kunalokho ababekulindele, futhi ekuqaleni babengakwazi ukuqonda ukuthi kungani. Impendulo ingatholakala ezingeni le-athomu - ezindaweni ezimbalwa ezibalulekile eziphakathi ngaphakathi kwezingxenye.
Abacwaningi e-LiU nase-SweGaN, beholwa nguLars Hultman noJun Lu be-LiU, bethula incazelo yalesi simo ku-Applied Physics Letters, futhi bachaza indlela yokwenza ama-transistors anekhono elikhulu kakhulu lokumelana nama-voltage aphezulu.
Ososayensi bathole indlela yokukhula kwe-epitaxial eyayingaziwa ngaphambili abayibize ngokuthi “ukukhula kwe-epitaxial okuguquguqukayo.” Kubangela ukuthi ukucindezeleka phakathi kwezingqimba ezahlukene kungene kancane kancane ezingqimbeni ezimbalwa zama-athomu. Lokhu kusho ukuthi bangakhulisa izingqimba ezimbili, i-gallium nitride kanye ne-aluminium nitride, ku-silicon carbide ngendlela yokulawula ezingeni le-athomu ukuthi izingqimba zihlobene kanjani komunye nomunye ezintweni. Elabhorethri bakhombisile ukuthi izinto zimelana nama-voltage aphezulu, afinyelela ku-1800 V. Uma i-voltage enjalo ibekwa phezu kwengxenye yakudala esekelwe ku-silicon, izinhlansi zizoqala ukundiza futhi i-transistor izobhujiswa.
“Sihalalisela i-SweGaN njengoba beqala ukumaketha lo mkhiqizo. Kubonisa ukubambisana okuphumelelayo kanye nokusetshenziswa kwemiphumela yocwaningo emphakathini. Ngenxa yokuxhumana okuseduze esinakho nozakwethu bangaphambilini abasebenzela inkampani manje, ucwaningo lwethu luba nomthelela ngokushesha nangaphandle kwezwe lezemfundo,” kusho uLars Hultman.
Izinto ezinikezwe yi-Linköping University. Okubhalwe nguMonica Westman Svenselius. Qaphela: Okuqukethwe kungahlelwa ngesitayela nobude.
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Isikhathi sokuthunyelwe: Meyi-11-2020