Uburyo bushya butanga transistors zikomeye: Ikura rya epitaxial rya epitaxial rya AlN nucleation layers kuri substrates za SiC kugira ngo transistors za GaN zisaguke cyane — ScienceDaily

Uburyo bushya bwo guhuza ibice bya semiconductors bito cyane nka nanometero nke bwatumye hatabaho kuvumburwa kwa siyansi gusa, ahubwo hanavuyemo ubwoko bushya bwa transistor ku bikoresho by'ikoranabuhanga bifite imbaraga nyinshi. Ibisubizo byasohotse mu gitabo cyitwa Applied Physics Letters, byakuruye abantu benshi.

Ibi byagezweho bivuye ku bufatanye bwa hafi hagati y’abahanga mu bya siyansi bo muri Kaminuza ya Linköping na SweGaN, ikigo cy’ubushakashatsi ku bikoresho muri LiU. Iki kigo gikora ibikoresho by’ikoranabuhanga byakozwe mu buryo bwa gallium nitride.

Gallium nitride, GaN, ni semiconductor ikoreshwa mu gukora diode zitanga urumuri neza. Ariko, ishobora no kugira akamaro mu zindi porogaramu, nka transistors, kuko ishobora kwihanganira ubushyuhe bwinshi n'imbaraga z'amashanyarazi kurusha izindi semiconductor nyinshi. Izi ni ingenzi ku bice by'ikoranabuhanga bizaza, cyane cyane ku bikoreshwa mu modoka zikoresha amashanyarazi.

Umuyaga wa Gallium nitride wemerewe kwivanga ukagera ku gacupa ka silikoni, bigatera ibara ryoroheje. Uburyo bumwe bw'ibikoresho bya kristu buhingwa ku gice cy'ikindi buzwi nka "epitaxy." Ubu buryo bukunze gukoreshwa mu nganda za semiconductor kuko butanga ubwisanzure bwinshi mu kugena imiterere ya kristu n'imiterere ya shimi ya filime ya nanometero yakozwe.

Uruvange rwa gallium nitride, GaN, na silicon carbide, SiC (zombi zishobora kwihanganira ingufu zikomeye z'amashanyarazi), rutuma imiyoboro y'amashanyarazi ikwiranye n'ikoreshwa aho ingufu nyinshi zikenewe.

Icyakora, imiterere y’ubuso hagati y’ibikoresho bibiri bya kristu, gallium nitride na silicon carbide, ni mibi cyane. Atome ziratandukana, bigatuma transistor inanirwa gukora. Ibi byakemuwe n’ubushakashatsi, nyuma butuma habaho igisubizo cy’ubucuruzi, aho urwego rworoshye cyane rwa aluminium nitride rwashyizwe hagati y’ibice bibiri.

Abahanga mu by’imashini zo muri SweGaN babonye ku bw’amahirwe ko transistors zabo zishobora guhangana n’imbaraga zo mu butaka zirenze izo bari babyiteze, kandi ntibashoboraga gusobanukirwa impamvu mbere na mbere. Igisubizo gishobora kuboneka ku rwego rwa atome - mu buso bubiri bw’ingenzi buri hagati y’ibice.

Abashakashatsi bo muri LiU na SweGaN, bayobowe na Lars Hultman na Jun Lu bo muri LiU, bagaragaza mu nyandiko za Applied Physics Letters ibisobanuro by'iki kintu, kandi basobanura uburyo bwo gukora transistors zifite ubushobozi bwo kwihanganira voltage nyinshi.

Abahanga mu bya siyansi bavumbuye uburyo bwo gukura bwa epitaxial butari buzwi mbere bise "transmorphic epitaxial growth." Butuma umuvuduko uri hagati y’ibice bitandukanye winjira buhoro buhoro mu bice bibiri bya atome. Ibi bivuze ko bashobora gukura ibice bibiri, gallium nitride na aluminium nitride, kuri silicon carbide mu buryo bwo kugenzura ku rwego rwa atome uburyo ibice bifitanye isano mu bikoresho. Muri laboratwari bagaragaje ko ibyo bikoresho bihangana n’imbaraga nyinshi, kugeza kuri 1800 V. Iyo ingufu nk’izo zishyirwa ku gice cya kera gishingiye kuri silicon, ibishashi byatangira kuguruka maze transistor ikangirika.

Lars Hultman agira ati: “Turashimira SweGaN kuko batangiye kwamamaza ubu buvumbuzi. Bigaragaza ubufatanye bwiza n’ikoreshwa ry’ibyavuye mu bushakashatsi muri sosiyete. Bitewe n’imikoranire ya hafi dufitanye na bagenzi bacu ba mbere ubu bakorera ikigo, ubushakashatsi bwacu bugira ingaruka vuba no hanze y’isi y’ubushakashatsi.”

Ibikoresho byatanzwe na Kaminuza ya Linköping. Inyandiko y'umwimerere yanditswe na Monica Westman Svenselius. Icyitonderwa: Ibikubiye muri iyi nyandiko bishobora guhindurwa hakurikijwe imiterere n'uburebure.

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