ʻO kahi ʻano hana hou e hoʻopili ai i nā papa o nā semiconductors lahilahi e like me kekahi mau nanometer ua hopena ʻaʻole wale i kahi ʻike ʻepekema akā he ʻano transistor hou hoʻi no nā mea uila mana kiʻekiʻe. ʻO ka hopena, i paʻi ʻia ma Applied Physics Letters, ua hoʻāla i ka hoihoi nui.
ʻO kēia hoʻokō ka hopena o ka laulima pili ʻana ma waena o nā kānaka ʻepekema ma ke Kulanui ʻo Linköping a me SweGaN, kahi hui i hoʻokaʻawale ʻia mai ka noiʻi ʻepekema mea ma LiU. Hana ka hui i nā ʻāpana uila i hana kūikawā ʻia mai ka gallium nitride.
ʻO Gallium nitride, GaN, he semiconductor i hoʻohana ʻia no nā diode hoʻomāmā kukui. Eia nō naʻe, hiki ke lilo i mea pono i nā noi ʻē aʻe, e like me nā transistors, ʻoiai hiki iā ia ke kū i nā mahana kiʻekiʻe a me nā ikaika o kēia manawa ma mua o nā semiconductors ʻē aʻe. He mau waiwai koʻikoʻi kēia no nā ʻāpana uila e hiki mai ana, ʻaʻole ka mea liʻiliʻi loa no nā mea i hoʻohana ʻia i nā kaʻa uila.
Ua ʻae ʻia ka mahu Gallium nitride e hoʻopili ma luna o kahi wafer o ka silicon carbide, e hana ana i kahi uhi lahilahi. ʻO ke ʻano o ka ulu ʻana o kekahi mea crystalline ma luna o kahi substrate o kekahi mea ʻē aʻe i kapa ʻia ʻo "epitaxy." Hoʻohana pinepine ʻia ke ʻano hana i ka ʻoihana semiconductor no ka mea hāʻawi ia i ke kūʻokoʻa nui i ka hoʻoholo ʻana i ke ʻano kristal a me ka haku mele kemika o ka ʻili nanometer i hana ʻia.
ʻO ka hui pū ʻana o ka gallium nitride, GaN, a me ka silicon carbide, SiC (hiki i nā mea ʻelua ke kū i nā kahua uila ikaika), e hōʻoiaʻiʻo ana ua kūpono nā kaapuni no nā noi e pono ai nā mana kiʻekiʻe.
ʻO ke kūpono ma ka ʻili ma waena o nā mea crystalline ʻelua, ʻo gallium nitride a me silicon carbide, akā naʻe, he haʻahaʻa. Hoʻopau nā ʻātoma i ka kūlike ʻole me kekahi i kekahi, kahi e alakaʻi ai i ka hāʻule ʻana o ka transistor. Ua hoʻoponopono ʻia kēia e ka noiʻi, kahi i alakaʻi ai i kahi hopena kalepa, kahi i kau ʻia ai kahi papa lahilahi o ka alumini nitride ma waena o nā papa ʻelua.
Ua ʻike nā ʻenekinia ma SweGaN ma kahi hanana hiki i kā lākou transistors ke kū i nā ikaika kahua kiʻekiʻe loa ma mua o ka mea a lākou i manaʻo ai, a ʻaʻole hiki iā lākou ke hoʻomaopopo mua i ke kumu. Hiki ke loaʻa ka pane ma ka pae atomika - ma kekahi mau ʻili waena koʻikoʻi i loko o nā ʻāpana.
Ua hōʻike nā kānaka noiʻi ma LiU lāua ʻo SweGaN, i alakaʻi ʻia e Lars Hultman lāua ʻo Jun Lu o LiU, ma Applied Physics Letters i kahi wehewehe ʻana o ka hanana, a wehewehe i kahi ʻano hana e hana ai i nā transistors me ka hiki ke kū i nā voltages kiʻekiʻe.
Ua ʻike nā kānaka ʻepekema i kahi ʻano ulu epitaxial i ʻike ʻole ʻia ma mua a lākou i kapa ai ʻo "transmorphic epitaxial growth." Hoʻoulu ia i ke kaumaha ma waena o nā papa like ʻole e omo mālie ʻia ma waena o kekahi mau papa o nā ʻātoma. ʻO ke ʻano kēia hiki iā lākou ke ulu i nā papa ʻelua, gallium nitride a me aluminium nitride, ma luna o ka silicon carbide i ke ʻano e kāohi ai ma ka pae atomika pehea e pili ai nā papa kekahi i kekahi i loko o ka mea. Ma ka hale hana ua hōʻike lākou e kū ana ka mea i nā voltages kiʻekiʻe, a hiki i ka 1800 V. Inā e kau ʻia kēlā voltages ma luna o kahi ʻāpana silicon maʻamau, e hoʻomaka nā huna ahi e lele a e luku ʻia ka transistor.
"Hoʻomaikaʻi mākou iā SweGaN i ko lākou hoʻomaka ʻana e kūʻai aku i ka mea i hana ʻia. Hōʻike ia i ka laulima kūpono a me ka hoʻohana ʻana i nā hopena noiʻi i loko o ke kaiāulu. Ma muli o ka pilina pili loa me kā mākou mau hoa hana ma mua e hana nei no ka ʻoihana, ua loaʻa koke ka hopena o kā mākou noiʻi ma waho o ke ao hoʻonaʻauao," wahi a Lars Hultman.
Nā mea i hāʻawi ʻia e ke Kulanui ʻo Linköping. Na Monica Westman Svenselius i kākau mua. Nānā: Hiki ke hoʻoponopono ʻia ka ʻike no ke ʻano a me ka lōʻihi.
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Ka manawa hoʻouna: Mei-11-2020