Indlela entsha yokudibanisa iileya zee-semiconductors ezincinci njengee-nanometers ezimbalwa ibangele kungekuphela nje ukufunyanwa kwesayensi kodwa nohlobo olutsha lwe-transistor kwizixhobo ze-elektroniki ezinamandla aphezulu. Isiphumo, esapapashwa kwi-Applied Physics Letters, sivuse umdla omkhulu.
Le mpumelelo ibangelwe yintsebenziswano esondeleyo phakathi koososayensi kwiYunivesithi yaseLinköping kunye neSweGaN, inkampani ephuma kuphando lwesayensi yezinto ezisetyenziswa kwiLiU. Le nkampani yenza izinto ze-elektroniki ezenzelwe wena nge-gallium nitride.
I-Gallium nitride, i-GaN, yi-semiconductor esetyenziselwa ii-diode ezikhupha ukukhanya ezisebenza kakuhle. Nangona kunjalo, inokuba luncedo nakwezinye iinkqubo, ezifana nee-transistors, kuba inokumelana namaqondo obushushu aphezulu kunye namandla angoku kunezinye ii-semiconductors ezininzi. Ezi ziimpawu ezibalulekileyo kwizixhobo ze-elektroniki zexesha elizayo, ingakumbi ezo zisetyenziswa kwizithuthi zombane.
Umphunga weGallium nitride uvunyelwe ukuba ujijeke kwi-wafer ye-silicon carbide, wenze uqweqwe oluncinci. Indlela apho enye into ekristale ikhuliswa khona kwi-substrate yenye yaziwa ngokuba yi-"epitaxy." Le ndlela idla ngokusetyenziswa kwishishini le-semiconductor kuba inika inkululeko enkulu ekumiseleni isakhiwo sekristale kunye nokwakheka kweekhemikhali kwifilimu ye-nanometer eyenziweyo.
Ukudibanisa i-gallium nitride, i-GaN, kunye ne-silicon carbide, i-SiC (zombini ezinokumelana namasimi ombane aqinileyo), kuqinisekisa ukuba iisekethe zifanelekile kwizicelo apho kufuneka amandla aphezulu.
Nangona kunjalo, ukulingana komphezulu phakathi kwezinto ezimbini zekristale, i-gallium nitride kunye ne-silicon carbide, akulunganga. Iiathom zigqibela zingahambelani, nto leyo ekhokelela ekungasebenzini kwe-transistor. Oku kuye kwajongwana nako ngophando, oluye lwakhokelela kwisisombululo sorhwebo, apho kwabekwa umaleko omncinci ngakumbi we-aluminium nitride phakathi kwezi layer zimbini.
Iinjineli zaseSweGaN zaphawula ngengozi ukuba ii-transistors zazo zinokukwazi ukumelana namandla aphezulu kakhulu entsimi kunokuba bezilindele, kwaye ekuqaleni azizange ziqonde ukuba kutheni. Impendulo ingafumaneka kwinqanaba le-athomu - kwiindawo ezimbalwa ezibalulekileyo eziphakathi ngaphakathi kwezixhobo.
Abaphandi baseLiU naseSweGaN, bekhokelwa nguLars Hultman noJun Lu baseLiU, baveza ingcaciso yale nto kwiApplied Physics Letters, kwaye bachaza indlela yokwenza ii-transistors ezinamandla ngakumbi okumelana ne-voltage ephezulu.
Izazinzulu zifumene indlela yokukhula kwe-epitaxial eyayingaziwa ngaphambili abayibize ngokuba yi-"transmorphic epitaxial growth." Ibangela ukuba uxinzelelo phakathi kweeleya ezahlukeneyo lufunxwe kancinci kancinci kwiileya ezimbalwa zeeathomu. Oku kuthetha ukuba zinokukhulisa ezi leya zimbini, i-gallium nitride kunye ne-aluminium nitride, kwi-silicon carbide ngendlela yokulawula kwinqanaba le-athomu indlela ezihambelana ngayo ezi leya kwizinto. Kwilabhoratri zibonise ukuba izinto ziyakwazi ukumelana nee-voltage eziphezulu, ukuya kuthi ga kwi-1800 V. Ukuba i-voltage enjalo ibekwe kwi-component ye-classic silicon-based, iintlantsi ziya kuqala ukubhabha kwaye i-transistor iya kutshatyalaliswa.
“Siyavuyisana neSweGaN njengoko beqala ukuthengisa olu vumbululo. Lubonisa intsebenziswano esebenzayo kunye nokusetyenziswa kweziphumo zophando kuluntu. Ngenxa yonxibelelwano olusondeleyo esinalo noogxa bethu bangaphambili abasebenzela inkampani ngoku, uphando lwethu lukhawuleza lube nefuthe nangaphandle kwehlabathi lezemfundo,” utshilo uLars Hultman.
Izixhobo ezibonelelwe yiYunivesithi yaseLinköping. Ibhalwe nguMonica Westman Svenselius. Qaphela: Umxholo ungahlelwa ngokwesitayile kunye nobude.
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Ixesha lokuthumela: Meyi-11-2020