Nā tētahi tikanga hou hei hono i ngā paparanga o ngā haurua-ā-ira he angiangi noa iho, kua hua ake ehara i te mea he kitenga pūtaiao anake engari he momo transistor hou anō hoki mō ngā taputapu hiko kaha-teitei. Nā te hua i whakaputaina i roto i te Applied Physics Letters, kua nui te hiahia ki te kite.
Ko te whakatutukitanga nei he hua o te mahi tahi tata a ngā kaipūtaiao o Te Whare Wānanga o Linköping me SweGaN, he kamupene i wehea mai i te rangahau pūtaiao rauemi i LiU. Ka hangaia e te kamupene ngā wāhanga hiko kua whakaritea kia rite ki te hiahia mai i te gallium nitride.
Ko te Gallium nitride, GaN, he haurua-whakakotahi e whakamahia ana mō ngā diode whakaputa mārama whai hua. Heoi anō, tera pea ka whai hua anō hoki i roto i ētahi atu tono, pērā i ngā transistors, nā te mea ka taea e ia te tu atu i ngā pāmahana teitei ake me te kaha o te iahiko i te maha atu o ngā haurua-whakakotahi. He āhuatanga nui ēnei mō ngā wāhanga hiko o muri mai, tae atu ki ngā mea e whakamahia ana i roto i ngā waka hiko.
Ka tukuna te kohu gallium nitride kia whakapūmau ki runga i te anga o te silicon carbide, ka hanga he paninga angiangi. Ko te tikanga e whakatipuhia ai tētahi rauemi tioata ki runga i tētahi papa o tētahi atu e mōhiotia ana ko te "epitaxy". He maha ngā wā e whakamahia ana tēnei tikanga i roto i te umanga semiconductor nā te mea he nui te herekoretanga ki te whakatau i te hanganga tioata me te hanganga matū o te kiriata nanometer i hangaia.
Mā te whakakotahitanga o te gallium nitride, GaN, me te silicon carbide, SiC (e taea ana e ēnei e rua te tu atu ki ngā papa hiko kaha), ka whakarite kia pai ngā ara iahiko mō ngā tono e hiahiatia ana he mana teitei.
Heoi, kāore i te pai te taunga o te mata i waenga i ngā rauemi tioata e rua, te gallium nitride me te silicon carbide. Ka kore e ōrite ngā ngota tetahi ki tetahi, ka pakaru te transistor. Kua whakatikahia tēnei e te rangahau, ā, i muri mai ka puta he otinga arumoni, i whakatakotoria ai he paparanga angiangi ake o te konumohe nitride i waenga i ngā paparanga e rua.
I kite noa ngā kaihangarau o SweGaN i te kaha o ā rātou transistors ki te tu atu ki ngā kaha mara teitei ake i tā rātou i whakaaro ai, ā, kāore i taea e rātou te mārama i te tīmatanga he aha. Ka kitea te whakautu i te taumata ngota - i roto i ētahi mata takawaenga nui i roto i ngā wāhanga.
I roto i te Applied Physics Letters, ka whakaaturia e ngā kairangahau i LiU me SweGaN, i raro i ngā kaiārahi o LiU, he whakamārama mō te āhuatanga, me te whakaahua i tētahi tikanga hei hanga i ngā transistors he kaha ake ki te tu atu i ngā ngaohiko tiketike.
Kua kitea e ngā kaipūtaiao tētahi tikanga tipu epitaxial kāore i te mōhiotia i mua, ā, i tapaina e rātou ko te "tipu epitaxial transmorphic." Mā tēnei ka mimiti haere te taumahatanga i waenga i ngā paparanga rerekē puta noa i ētahi paparanga ngota. Ko te tikanga ka taea e rātou te whakatipu i ngā paparanga e rua, te gallium nitride me te konumohe nitride, ki runga i te silicon carbide kia taea ai te whakahaere i te taumata ngota me pēhea te whanaungatanga o ngā paparanga ki a rātou anō i roto i te rauemi. I roto i te taiwhanga kua whakaaturia e rātou ka taea e te rauemi te tu atu ki ngā ngaohiko teitei, tae atu ki te 1800 V. Mena ka whakatakotoria taua ngaohiko ki runga i tētahi wāhanga silicon tawhito, ka tīmata te rere o ngā mura, ā, ka whakangaromia te transistor.
"E mihi ana mātou ki a SweGaN i a rātou e tīmata ana ki te hokohoko i te mea hou. E whakaatu ana i te mahi tahi whai hua me te whakamahinga o ngā hua rangahau i roto i te hapori. Nā te hononga tata o mātou ki ō mātou hoa mahi o mua e mahi ana mā te kamupene i nāianei, kua tere te pānga o ā mātou rangahau ki waho atu o te ao mātauranga," te kī a Lars Hultman.
Nā Te Whare Wānanga o Linköping ngā rauemi i whakarato. Nā Monica Westman Svenselius i tuhi te tuhinga taketake. Kia mōhio: Ka taea te whakatika i ngā ihirangi mō te momo me te roa.
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Wā tuku: Mei-11-2020