Njira yatsopano imapereka ma transistors olimba: Kukula kwa epitaxial kwa zigawo za nucleation za AlN pa SiC substrates kuti ma transistors a GaN opyapyala kwambiri awonongeke — ScienceDaily

Njira yatsopano yolumikizira zigawo za ma semiconductors opyapyala ngati ma nanometer ochepa yapangitsa kuti pasakhale kufufuza kwasayansi kokha komanso mtundu watsopano wa transistor wa zida zamagetsi zamphamvu kwambiri. Zotsatira zake, zomwe zafalitsidwa mu Applied Physics Letters, zadzutsa chidwi chachikulu.

Kupambana kumeneku kwachitika chifukwa cha mgwirizano wapakati pa asayansi ku Linköping University ndi SweGaN, kampani yochokera ku kafukufuku wa sayansi ya zinthu ku LiU. Kampaniyo imapanga zida zamagetsi zopangidwa ndi gallium nitride.

Gallium nitride, GaN, ndi semiconductor yomwe imagwiritsidwa ntchito popanga ma diode otulutsa kuwala bwino. Komabe, ingakhalenso yothandiza pazinthu zina, monga ma transistors, chifukwa imatha kupirira kutentha kwambiri komanso mphamvu zamagetsi kuposa ma semiconductor ena ambiri. Izi ndi zofunika kwambiri pazida zamagetsi zam'tsogolo, makamaka zomwe zimagwiritsidwa ntchito m'magalimoto amagetsi.

Nthunzi ya Gallium nitride imaloledwa kukhuthala pa wafer ya silicon carbide, ndikupanga utoto woonda. Njira yomwe kristalo imodzi imakulitsidwira pa substrate ya china imadziwika kuti "epitaxy." Njirayi imagwiritsidwa ntchito nthawi zambiri mumakampani opanga ma semiconductor chifukwa imapereka ufulu waukulu pakuzindikira kapangidwe ka kristalo ndi kapangidwe ka mankhwala ka filimu ya nanometer yopangidwa.

Kuphatikiza kwa gallium nitride, GaN, ndi silicon carbide, SiC (zonse zomwe zimatha kupirira magetsi amphamvu), kumatsimikizira kuti ma circuits ndi oyenera kugwiritsidwa ntchito komwe mphamvu zambiri zimafunikira.

Komabe, kuyanjana kwa pamwamba pakati pa zinthu ziwiri za kristalo, gallium nitride ndi silicon carbide, n'kochepa. Maatomu amatha kusagwirizana, zomwe zimapangitsa kuti transistor isagwire ntchito. Kafukufuku wachita izi, zomwe pambuyo pake zidapangitsa kuti pakhale njira yogulitsira, momwe gawo lochepa kwambiri la aluminiyamu nitride linayikidwa pakati pa zigawo ziwirizi.

Mainjiniya a ku SweGaN adazindikira mwangozi kuti ma transistors awo amatha kuthana ndi mphamvu zazikulu kwambiri kuposa momwe amayembekezera, ndipo poyamba sanamvetse chifukwa chake. Yankho lingapezeke pamlingo wa atomiki - m'malo ochepa ofunikira mkati mwa zigawozo.

Ofufuza ku LiU ndi SweGaN, motsogozedwa ndi Lars Hultman ndi Jun Lu a LiU, akupereka kufotokozera kwa izi mu Applied Physics Letters, ndipo akufotokoza njira yopangira ma transistors okhala ndi mphamvu yayikulu yopirira ma voltage apamwamba.

Asayansi apeza njira yokulira ya epitaxial yomwe kale inali yosadziwika yomwe adayitcha "transmorphic epitaxial growth." Izi zimapangitsa kuti kupsinjika pakati pa zigawo zosiyanasiyana kulowe pang'onopang'ono m'magawo angapo a maatomu. Izi zikutanthauza kuti amatha kukulitsa zigawo ziwirizi, gallium nitride ndi aluminium nitride, pa silicon carbide mwanjira yoti athe kuwongolera pamlingo wa atomiki momwe zigawozo zimagwirizanirana muzinthuzo. Mu labotale awonetsa kuti zinthuzo zimapirira ma voltages okwera, mpaka 1800 V. Ngati magetsi oterewa ayikidwa pa gawo lakale lochokera ku silicon, ma sparks amayamba kuuluka ndipo transistor idzawonongeka.

"Tikuyamika SweGaN pamene akuyamba kutsatsa luso lamakonoli. Zikuwonetsa mgwirizano wabwino komanso kugwiritsa ntchito zotsatira za kafukufuku m'dera la anthu. Chifukwa cha ubale wapafupi womwe tili nawo ndi anzathu akale omwe tsopano akugwira ntchito ku kampaniyo, kafukufuku wathu mwachangu wakhala ndi zotsatirapo zake kunja kwa dziko la maphunziro," akutero Lars Hultman.

Zipangizo zoperekedwa ndi Linköping University. Yolembedwa ndi Monica Westman Svenselius. Dziwani: Zomwe zili mkati mwake zitha kusinthidwa malinga ndi kalembedwe ndi kutalika kwake.

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