2 Nā hopena hoʻokolohua a me ke kūkākūkā ʻana
2.1Papa epitaxialmānoanoa a me ke kūlike
ʻO ka mānoanoa o ka papa epitaxial, ka nui o ka doping a me ke kūlike ʻana kekahi o nā ʻōkuhi koʻikoʻi no ka hoʻoholo ʻana i ka maikaʻi o nā wafers epitaxial. ʻO ka mānoanoa hiki ke hoʻomalu pono ʻia, ka nui o ka doping a me ke kūlike ʻana i loko o ka wafer ke kī i ka hōʻoia ʻana i ka hana a me ke kūlike oNā mea hana mana SiC, a me ka mānoanoa o ka papa epitaxial a me ke ʻano like o ka hoʻohui ʻana o ka doping he mau kumu koʻikoʻi nō hoʻi no ke ana ʻana i ka hiki ke hana o nā lako epitaxial.
Hōʻike ka Kiʻi 3 i ke ʻano like o ka mānoanoa a me ke kaʻina hoʻolaha o 150 mm a me 200 mmNā wafers epitaxial SiC. Hiki ke ʻike ʻia mai ke kiʻi he symmetrical ka piʻo hoʻolaha mānoanoa o ka papa epitaxial e pili ana i ke kikowaena o ka wafer. ʻO ka manawa hana epitaxial he 600s, ʻo ka awelika o ka mānoanoa o ka papa epitaxial o ka wafer epitaxial 150mm he 10.89 um, a ʻo ke ʻano like o ka mānoanoa he 1.05%. Ma ka helu ʻana, ʻo ka nui o ka ulu ʻana o ka epitaxial he 65.3 um/h, ʻo ia ka pae hana epitaxial wikiwiki maʻamau. Ma lalo o ka manawa hana epitaxial like, ʻo ka mānoanoa o ka papa epitaxial o ka wafer epitaxial 200 mm he 10.10 um, aia ke ʻano like o ka mānoanoa i loko o 1.36%, a ʻo ka nui o ka ulu holoʻokoʻa he 60.60 um/h, ʻoi aku ka haʻahaʻa ma mua o ka nui o ka ulu ʻana o ka epitaxial 150 mm. ʻO kēia no ka mea aia ka pohō maopopo ma ke ala ke kahe ke kumu silicon a me ke kumu kalapona mai luna o ke keʻena hana ma o ka ʻili wafer a i lalo o ke keʻena hana, a ʻoi aku ka nui o ka ʻāpana wafer 200 mm ma mua o ka 150 mm. Ke kahe nei ke kinoea ma o ka ʻili o ka wafer 200 mm no kahi mamao lōʻihi, a ʻoi aku ka nui o ke kinoea kumu i hoʻopau ʻia ma ke ala. Ma lalo o ke kūlana e hoʻomau ka wafer i ka wili ʻana, ʻoi aku ka lahilahi o ka mānoanoa o ka papa epitaxial, no laila lohi ka wikiwiki o ka ulu ʻana. Ma keʻano holoʻokoʻa, maikaʻi loa ka like ʻana o ka mānoanoa o nā wafer epitaxial 150 mm a me 200 mm, a hiki i ka hiki ke hana o nā lako ke hoʻokō i nā koi o nā mea hana kiʻekiʻe.
2.2 Ka hoʻohuihui ʻana o ka papa epitaxial a me ke ʻano like
Hōʻike ka Kiʻi 4 i ke ʻano like o ka doping concentration a me ka hoʻolaha piʻo o 150 mm a me 200 mmNā wafers epitaxial SiC. E like me ka mea i ʻike ʻia mai ke kiʻi, ʻo ke kiʻikuhi hoʻolaha ʻana o ka nui ma ka wafer epitaxial he symmetry maopopo e pili ana i ke kikowaena o ka wafer. ʻO ke ʻano like o ka doping concentration o nā papa epitaxial 150 mm a me 200 mm he 2.80% a me 2.66%, hiki ke hoʻomalu ʻia i loko o 3%, he pae maikaʻi loa ia no nā lako honua like. Hoʻolaha ʻia ke kiʻikuhi doping concentration o ka papa epitaxial ma ke ʻano "W" ma ke kuhikuhi diameter, kahi i hoʻoholo nui ʻia e ke kahua kahe o ka umu epitaxial paia wela ākea, no ka mea, ʻo ke kuhikuhi o ka ea o ka umu ulu epitaxial ea ākea mai ka hopena komo ea (i luna) a kahe i waho mai ka hopena i lalo ma ke ʻano laminar ma o ka ʻili wafer; no ka mea, ʻoi aku ka kiʻekiʻe o ka "along-the-way depletion" o ke kumu kalapona (C2H4) ma mua o ke kumu silicon (TCS), i ka wā e wili ai ka wafer, e emi mālie ana ka C/Si maoli ma ka ʻili wafer mai ka lihi a i ke kikowaena (ʻoi aku ka liʻiliʻi o ke kumu kalapona ma ke kikowaena), e like me ke "kumumanaʻo kūlana hoʻokūkū" o C a me N, e emi mālie ana ka nui o ka doping ma ke kikowaena o ka wafer i ka lihi, i mea e loaʻa ai ka like ʻana o ka nui, hoʻohui ʻia ka lihi N2 ma ke ʻano he uku i ka wā o ke kaʻina hana epitaxial e hoʻolohi i ka emi ʻana o ka nui o ka doping mai ke kikowaena a i ka lihi, i hiki ai i ka piʻo hope loa o ka doping ke hōʻike i kahi ʻano "W".
2.3 Nā hemahema o ka papa epitaxial
Ma waho aʻe o ka mānoanoa a me ka hoʻohuihui doping, ʻo ke kiʻekiʻe o ka kaohi ʻana i ka hemahema o ka papa epitaxial he palena koʻikoʻi nō hoʻi ia no ke ana ʻana i ka maikaʻi o nā wafers epitaxial a he hōʻailona koʻikoʻi o ke kaʻina hana o nā lako epitaxial. ʻOiai he ʻokoʻa nā koi o SBD a me MOSFET no nā hemahema, ʻo nā hemahema morphology o ka ʻili e like me nā hemahema hāʻule, nā hemahema triangle, nā hemahema kāloti, nā hemahema comet, a pēlā aku, ua wehewehe ʻia he mau hemahema pepehi kanaka o nā polokalamu SBD a me MOSFET. Kiʻekiʻe ka likelika o ka hāʻule ʻana o nā ʻāpana i loaʻa kēia mau hemahema, no laila ʻo ka kaohi ʻana i ka helu o nā hemahema pepehi kanaka he mea nui loa ia no ka hoʻomaikaʻi ʻana i ka hua o ka ʻāpana a me ka hōʻemi ʻana i nā kumukūʻai. Hōʻike ka Kiʻi 5 i ka hoʻolaha ʻana o nā hemahema pepehi kanaka o nā wafers epitaxial 150 mm a me 200 mm SiC. Ma lalo o ke kūlana ʻaʻohe kūlike ʻole i ka lakio C/Si, hiki ke hoʻopau ʻia nā hemahema kāloti a me nā hemahema comet, ʻoiai ʻo nā hemahema hāʻule a me nā hemahema triangle e pili ana i ka kaohi maʻemaʻe i ka wā o ka hana ʻana o nā lako epitaxial, ka pae haumia o nā ʻāpana graphite i loko o ke keʻena hopena, a me ke ʻano o ka substrate. Mai ka Papa 2, hiki ke ʻike ʻia hiki ke hoʻomalu ʻia ka nui o ka hemahema pepehi kanaka o nā wafers epitaxial 150 mm a me 200 mm i loko o 0.3 mau ʻāpana/cm2, he pae maikaʻi loa ia no ke ʻano lako like. ʻOi aku ka maikaʻi o ka pae hoʻomalu o ka hemahema make o ka wafer epitaxial 150 mm ma mua o ka wafer epitaxial 200 mm. ʻO kēia no ka mea ʻoi aku ka oʻo o ke kaʻina hana hoʻomākaukau substrate o 150 mm ma mua o 200 mm, ʻoi aku ka maikaʻi o ka substrate, a ʻoi aku ka maikaʻi o ka pae hoʻomalu haumia o ke keʻena hana graphite 150 mm.
2.4 ʻO ka ʻilikai wafer epitaxial
Hōʻike ka Kiʻi 6 i nā kiʻi AFM o ka ʻili o nā wafers epitaxial SiC 150 mm a me 200 mm. Hiki ke ʻike ʻia mai ke kiʻi ʻo ka ʻili o ke kumu ʻoi loa o ka roughness Ra o nā wafers epitaxial 150 mm a me 200 mm he 0.129 nm a me 0.113 nm, a he laumania ka ʻili o ka papa epitaxial me ka ʻole o ka hanana macro-step aggregation. Hōʻike kēia hanana i ka ulu ʻana o ka papa epitaxial e mālama mau i ke ʻano ulu kahe ʻanuʻu i ka wā o ke kaʻina hana epitaxial holoʻokoʻa, a ʻaʻohe ʻanuʻu aggregation e hana ʻia. Hiki ke ʻike ʻia ma ka hoʻohana ʻana i ke kaʻina hana ulu epitaxial i hoʻomaikaʻi ʻia, hiki ke loaʻa nā papa epitaxial laumania ma nā substrates haʻahaʻa 150 mm a me 200 mm.
3 Hopena
Ua hoʻomākaukau pono ʻia nā wafers epitaxial homogeneous 150 mm a me 200 mm 4H-SiC ma nā substrates home me ka hoʻohana ʻana i nā lako ulu epitaxial 200 mm SiC i hoʻomohala ponoʻī ʻia, a ua hoʻomohala ʻia ke kaʻina hana epitaxial homogeneous kūpono no 150 mm a me 200 mm. Hiki i ka wikiwiki o ka ulu ʻana o ka epitaxial ke ʻoi aku ma mua o 60 μm/h. ʻOiai e hoʻokō ana i ke koi epitaxy wikiwiki, maikaʻi loa ke ʻano o ka wafer epitaxial. Hiki ke hoʻomalu ʻia ke ʻano like o ka mānoanoa o nā wafers epitaxial 150 mm a me 200 mm SiC i loko o 1.5%, ʻoi aku ka like o ka nui ma mua o 3%, ʻoi aku ka nui o ka hemahema make ma mua o 0.3 mau ʻāpana/cm2, a ʻoi aku ka liʻiliʻi o ke kumu epitaxial surface roughness root mean square Ra ma mua o 0.15 nm. Aia nā hōʻailona hana koʻikoʻi o nā wafers epitaxial ma ka pae kiʻekiʻe i ka ʻoihana.
Puna: Nā Lako Kūikawā ʻOihana Uila
Mea kākau: Xie Tianle, Li Ping, Yang Yu, Gong Xiaoliang, Ba Sai, Chen Guoqin, Wan Shengqiang
(ʻOihana Noiʻi 48 o Kina Electronics Technology Group Corporation, Changsha, Hunan 410111)
Ka manawa hoʻouna: Sep-04-2024