2 Iziphumo zovavanyo kunye nengxoxo
2.1Umaleko we-Epitaxialubukhulu kunye nokufana
Ubukhulu beleya ye-Epitaxial, uxinaniso lwe-doping kunye nokufana zezinye zezona zinto zibalulekileyo zokugweba umgangatho wee-epitaxial wafers. Uxinaniso lwe-doping kunye nokufana kwe-wafer zezona zinto zibalulekileyo ekuqinisekiseni ukusebenza kunye nokuhambelana kwe-wafers.Izixhobo zamandla zeSiC, kunye nobukhulu beleyara ye-epitaxial kunye nokufana koxinzelelo lwe-doping nazo ziziseko ezibalulekileyo zokulinganisa amandla enkqubo yezixhobo ze-epitaxial.
Umfanekiso 3 ubonisa ubukhulu obufanayo kunye negophe lokusasazwa kwe-150 mm kunye ne-200 mmIiwafer ze-SiC epitaxial. Kuyabonakala kumfanekiso ukuba ijika lokusasazwa kobukhulu be-epitaxial layer lilingana nendawo ephakathi ye-wafer. Ixesha lenkqubo ye-epitaxial yi-600s, ubukhulu obuphakathi be-epitaxial layer ye-150mm epitaxial wafer yi-10.89 um, kwaye ukufana kobukhulu yi-1.05%. Ngokubala, izinga lokukhula kwe-epitaxial yi-65.3 um/h, elilinqanaba eliqhelekileyo lenkqubo ye-epitaxial ekhawulezayo. Phantsi kwexesha elifanayo lenkqubo ye-epitaxial, ubukhulu be-epitaxial layer ye-200 mm epitaxial wafer yi-10.10 um, ukufana kobukhulu kungaphakathi kwe-1.36%, kwaye izinga lokukhula lilonke yi-60.60 um/h, eliphantsi kancinci kunezinga lokukhula kwe-epitaxial ye-150 mm. Oku kungenxa yokuba kukho ilahleko ecacileyo endleleni xa umthombo we-silicon kunye nomthombo wekhabhoni uphuma phezulu kwigumbi lokusabela udlula kumphezulu we-wafer ukuya kumphezulu wegumbi lokusabela, kwaye indawo ye-wafer engama-200 mm inkulu kune-150 mm. Igesi idlula kumphezulu we-wafer engama-200 mm umgama omde, kwaye igesi yomthombo esetyenziswa endleleni ingaphezulu. Phantsi kwemeko yokuba i-wafer iqhubeka ijikeleza, ubukhulu be-epitaxial layer buncinci, ngoko ke izinga lokukhula lihamba kancinci. Ngokubanzi, ubukhulu be-wafers ezingama-150 mm kunye nama-200 mm epitaxial bulungile kakhulu, kwaye amandla enkqubo yezixhobo anokuhlangabezana neemfuno zezixhobo ezikumgangatho ophezulu.
2.2 Uxinaniso kunye nokufana kwe-epitaxial layer doping
Umfanekiso 4 ubonisa ukufana koxinzelelo lwe-doping kunye nokusasazwa kwegophe le-150 mm kunye ne-200 mmIiwafer ze-SiC epitaxialNjengoko kunokubonwa kumfanekiso, ijika lokusasazwa koxinzelelo kwi-wafer ye-epitaxial linomlinganiso ocacileyo xa kuthelekiswa nombindi we-wafer. Ukufana koxinzelelo lwe-doping lwee-epitaxial layers ze-150 mm kunye ne-200 mm yi-2.80% kunye ne-2.66% ngokulandelanayo, ezinokulawulwa ngaphakathi kwe-3%, elilinqanaba elihle kakhulu kwizixhobo ezifanayo zamazwe ngamazwe. Ijika loxinzelelo lwe-doping lomaleko we-epitaxial lisasazwa kwimo "ye-W" ecaleni kwecala lobubanzi, elimiselwa kakhulu yintsimi yokuhamba komlilo we-epitaxial odongeni olushushu oluthe tye, kuba icala lokuhamba komoya lomlilo we-epitaxial okhulayo womoya othe tye livela kwisiphelo sokungena komoya (phezulu) kwaye liphuma kwisiphelo esisezantsi ngendlela ye-laminar kumphezulu we-wafer; kuba izinga "lokuphelelwa ngamandla" komthombo wekhabhoni (C2H4) liphezulu kunelo lomthombo wesilicon (TCS), xa i-wafer ijikeleza, i-C/Si yokwenyani kumphezulu we-wafer iyancipha kancinci kancinci ukusuka kumphetho ukuya embindini (umthombo wekhabhoni embindini uncinci), ngokwe "theory yendawo yokhuphiswano" ye-C kunye ne-N, uxinzelelo lwe-doping embindini we-wafer luyancipha kancinci kancinci ukuya kumphetho, ukuze kufunyanwe ukulingana okugqwesileyo koxinzelelo, umphetho we-N2 wongezwa njengembuyekezo ngexesha lenkqubo ye-epitaxial ukuze kuncitshiswe ukwehla koxinzelelo lwe-doping ukusuka embindini ukuya kumphetho, ukuze i-curve yokugqibela yoxinzelelo lwe-doping ibonise imo "ye-W".
2.3 Iziphene zomaleko we-Epitaxial
Ukongeza kubukhulu kunye noxinzelelo lwe-doping, inqanaba lolawulo lwesiphako se-epitaxial layer likwayindlela ephambili yokulinganisa umgangatho wee-epitaxial wafers kunye nesibonakaliso esibalulekileyo sobuchule benkqubo yezixhobo ze-epitaxial. Nangona i-SBD kunye ne-MOSFET zinemfuno ezahlukeneyo zeziphako, iziphako ezibonakalayo ngakumbi ze-surface morphology ezifana neziphako zokuwa, iziphako zonxantathu, iziphako ze-carrot, iziphako ze-comet, njl. zichazwa njengeziphako zokubulala zezixhobo ze-SBD kunye ne-MOSFET. Amathuba okungaphumeleli kwee-chips eziqulethe ezi ziphako aphezulu, ngoko ke ukulawula inani leziphako zokubulala kubaluleke kakhulu ekuphuculeni isivuno se-chip kunye nokunciphisa iindleko. Umfanekiso 5 ubonisa ukusasazwa kweziphako zokubulala ze-150 mm kunye ne-200 mm SiC epitaxial wafers. Phantsi kwemeko yokuba akukho kungalingani okucacileyo kumlinganiselo we-C/Si, iziphako ze-carrot kunye neziphako ze-comet zinokususwa ngokusisiseko, ngelixa iziphako zokuwa kunye neziphako zonxantathu zinxulumene nolawulo lococeko ngexesha lokusebenza kwezixhobo ze-epitaxial, inqanaba lokungacoceki kwamacandelo e-graphite kwigumbi lokusabela, kunye nomgangatho we-substrate. KwiTheyibhile 2, kunokubonwa ukuba ubuninzi be-killer defect density ye-150 mm kunye ne-200 mm epitaxial wafers bunokulawulwa ngaphakathi kwe-0.3 particles/cm2, eli linqanaba elihle kakhulu kuhlobo olufanayo lwezixhobo. Inqanaba lolawulo lwe-density density ye-150 mm epitaxial wafer lingcono kunelo le-200 mm epitaxial wafer. Oku kungenxa yokuba inkqubo yokulungiselela i-substrate ye-150 mm ikhulile kuneye-200 mm, umgangatho we-substrate ungcono, kwaye inqanaba lolawulo lokungcola kwe-150 mm graphite reaction chamber lingcono.
2.4 Uburhabaxa bomphezulu we-epitaxial wafer
Umfanekiso 6 ubonisa imifanekiso ye-AFM yomphezulu wee-wafers ze-epitaxial ze-150 mm kunye ne-200 mm ze-SiC. Kuyabonakala kumfanekiso ukuba ingcambu yomphezulu i-Ra ephakathi kwe-150 mm kunye ne-200 mm zee-epitaxial wafers yi-0.129 nm kunye ne-0.113 nm ngokulandelanayo, kwaye umphezulu womaleko we-epitaxial uthambile ngaphandle kwento ecacileyo yokuhlanganiswa kwe-macro-step. Le nto ibonisa ukuba ukukhula komaleko we-epitaxial kuhlala kugcina indlela yokukhula kokuhamba kwenyathelo ngexesha lonke lenkqubo ye-epitaxial, kwaye akukho kuhlanganiswa kwenyathelo okwenzekayo. Kuyabonakala ukuba ngokusebenzisa inkqubo yokukhula ye-epitaxial elungiselelwe kakuhle, ii-layers ze-epitaxial ezithambileyo zinokufunyanwa kwi-substrates ze-150 mm kunye ne-200 mm ezisezantsi.
3 Isiphelo
Ii-wafers ze-epitaxial ze-150 mm kunye ne-200 mm ze-4H-SiC ezilinganayo zilungiswe ngempumelelo kwiindawo zasekhaya kusetyenziswa izixhobo zokukhulisa i-200 mm ze-SiC epitaxial eziziphuhlisileyo, kwaye inkqubo ye-epitaxial elinganayo efanelekileyo kwi-150 mm kunye ne-200 mm yaphuhliswa. Izinga lokukhula kwe-epitaxial linokuba ngaphezulu kwe-60 μm/h. Ngelixa kuhlangatyezwana nemfuneko ye-epitaxy ekhawulezayo, umgangatho we-epitaxial wafer ubalasele. Ukufana kobukhulu bee-wafers ze-epitaxial ze-150 mm kunye ne-200 mm ze-SiC zingalawulwa ngaphakathi kwe-1.5%, ukufana koxinzelelo kungaphantsi kwe-3%, uxinano lwesiphene esibulalayo lungaphantsi kwe-0.3 particles/cm2, kwaye i-root roughness yomphezulu we-epitaxial mean square Ra ingaphantsi kwe-0.15 nm. Izalathisi zenkqubo ephambili yee-wafers ze-epitaxial zikwinqanaba eliphambili kushishino.
Umthombo: Izixhobo Ezikhethekileyo Zoshishino Lwe-elektroniki
Umbhali: Xie Tianle, Li Ping, Yang Yu, Gong Xiaoliang, Ba Sai, Chen Guoqin, Wan Shengqiang
(I-48th Research Institute of China Electronics Technology Group Corporation, eChangsha, eHunan 410111)
Ixesha leposi: Sep-04-2024