2 Nsonaazụ nnwale na mkparịta ụka
2.1Oyi akwa epitaxialọkpụrụkpụ na otu
Ọkpụrụkpụ nke akwa epitaxial, ntinye ọgwụ doping na otu esi eme ya bụ otu n'ime ihe ndị na-egosi ịdị mma nke wafer epitaxial. Ọkpụrụkpụ nke a na-achịkwa nke ọma, ntinye ọgwụ doping na otu esi eme ya n'ime wafer bụ isi ihe na-eme ka arụmọrụ na ịdị n'otu nke ahụ dị.Ngwaọrụ ike SiC, na ọkpụrụkpụ oyi akwa epitaxial na nha nhata nke njupụta doping bụkwa isi ihe dị mkpa maka ịtụ ikike usoro nke akụrụngwa epitaxial.
Foto nke 3 na-egosi otu ọkpụrụkpụ na usoro nkesa nke 150 mm na 200 mm.Wafers epitaxial SiC. A pụrụ ịhụ site na eserese ahụ na ọkpụrụkpụ nkesa nke oyi akwa epitaxial dị ka ihe si dị n'etiti ebe wafer ahụ. Oge usoro epitaxial bụ 600s, nkezi ọkpụrụkpụ oyi akwa epitaxial nke wafer epitaxial 150mm bụ 10.89 um, nha nha ọkpụrụkpụ ahụ bụkwa 1.05%. Site na ngụkọ, ọnụego uto epitaxial bụ 65.3 um/h, nke bụ ọkwa usoro epitaxial ngwa ngwa a na-ahụkarị. N'okpuru otu oge usoro epitaxial ahụ, ọkpụrụkpụ oyi akwa epitaxial nke wafer epitaxial 200 mm bụ 10.10 um, nha nha nhata dị n'ime 1.36%, na ọnụego uto zuru oke bụ 60.60 um/h, nke dị ntakịrị ala karịa ọnụego uto epitaxial 150 mm. Nke a bụ n'ihi na enwere mfu doro anya n'ụzọ mgbe isi iyi silicon na isi iyi carbon na-esi n'elu ụlọ mmeghachi omume na-asọpụta site na elu ụlọ mmeghachi omume site na elu wafer ruo na ala nke ụlọ mmeghachi omume, ebe wafer 200 mm buru ibu karịa 150 mm. Gas na-agafe n'elu wafer 200 mm ruo ogologo oge, gas isi iyi a na-eri n'ụzọ na-abawanye. N'ọnọdụ na wafer na-aga n'ihu na-agbagharị, ọkpụrụkpụ nke oyi akwa epitaxial na-adị gịrịgịrị, yabụ ọnụego uto na-ebelata. N'ozuzu, nha nha nke wafer epitaxial 150 mm na 200 mm dị mma, ikike usoro nke akụrụngwa ahụ nwere ike iru ihe achọrọ nke ngwaọrụ dị elu.
2.2 Ngụkọta na nha nhata nke ihe e ji doping mee n'ime akwa epitaxial
Foto nke 4 na-egosi otu nha anya nke doping na nkesa nke 150 mm na 200 mm.Wafers epitaxial SiCDịka a pụrụ ịhụ site na eserese ahụ, usoro nkesa ntinye na wafer epitaxial nwere nhazi doro anya ma e jiri ya tụnyere etiti wafer ahụ. Nha nhata ntinye doping nke oyi akwa epitaxial 150 mm na 200 mm bụ 2.80% na 2.66% n'otu n'otu, nke enwere ike ijikwa n'ime 3%, nke bụ ọkwa dị mma maka ngwa mba ụwa ndị yiri ya. A na-ekesa usoro ntinye doping nke oyi akwa epitaxial n'ụdị "W" n'akụkụ ntụziaka dayameta, nke a na-ekpebikarị site na mpaghara mmiri nke ọkụ epitaxial mgbidi ọkụ kwụ ọtọ, n'ihi na ntụziaka ikuku nke ọkụ epitaxial uto ikuku kwụ ọtọ sitere na njedebe ikuku (elu) ma na-asọpụta site na njedebe ala n'ụzọ laminar site na elu wafer; N'ihi na "mbelata n'ụzọ" nke isi iyi carbon (C2H4) dị elu karịa nke isi iyi silicon (TCS), mgbe wafer na-agbagharị, C/Si n'ezie dị n'elu wafer na-ebelata nwayọ site na nsọtụ ruo na etiti (isi iyi carbon dị n'etiti adịghị obere), dịka "echiche ọnọdụ asọmpi" nke C na N si dị, ntinye doping n'etiti wafer na-ebelata nwayọ nwayọ gaa na nsọtụ, iji nweta nha nhata nke ọma, a na-agbakwunye nsọtụ N2 dị ka ụgwọ ọrụ n'oge usoro epitaxial iji belata mbelata nke ntinye doping site na etiti ruo na nsọtụ, nke mere na usoro ntinye doping ikpeazụ na-egosipụta ọdịdị "W".
2.3 Njehie oyi akwa epitaxial
Na mgbakwunye na ọkpụrụkpụ na ntinye ọgwụ, ọkwa nke njikwa ntụpọ oyi akwa epitaxial bụkwa paramita isi maka ịtụ àgwà nke wafers epitaxial na ihe ngosi dị mkpa nke ikike usoro nke akụrụngwa epitaxial. Ọ bụ ezie na SBD na MOSFET nwere ihe dị iche iche achọrọ maka ntụpọ, a na-akọwa ntụpọ ọdịdị elu dị ka ntụpọ ọdịda, ntụpọ triangle, ntụpọ karọt, ntụpọ comet, wdg dị ka ntụpọ na-egbu egbu nke ngwaọrụ SBD na MOSFET. Ohere nke ọdịda nke chips nwere ntụpọ ndị a dị elu, yabụ ijikwa ọnụọgụ nke ntụpọ na-egbu egbu dị oke mkpa maka imeziwanye mmepụta chip na ibelata ọnụ ahịa. Foto nke 5 na-egosi nkesa nke ntụpọ na-egbu egbu nke wafers epitaxial SiC 150 mm na 200 mm. N'okpuru ọnọdụ na enweghị enweghị nguzozi doro anya na oke C/Si, enwere ike iwepụ ntụpọ karọt na ntụpọ comet, ebe ntụpọ na ntụpọ triangle metụtara njikwa ọcha n'oge ọrụ nke akụrụngwa epitaxial, ọkwa adịghị ọcha nke akụkụ graphite na ụlọ mmeghachi omume, na ịdị mma nke substrate. Site na Tebụl nke 2, a pụrụ ịhụ na njupụta ntụpọ dị egwu nke 150 mm na 200 mm epitaxial wafers nwere ike ịchịkwa n'ime 0.3 obere ihe/cm2, nke bụ ọkwa dị mma maka otu ụdị ngwaọrụ ahụ. Ọkwa njikwa njupụta ntụpọ dị egwu nke 150 mm epitaxial wafer ka mma karịa nke 200 mm epitaxial wafer. Nke a bụ n'ihi na usoro nkwadebe substrate nke 150 mm toro karịa nke 200 mm, ịdị mma substrate ka mma, ọkwa njikwa adịghị ọcha nke 150 mm graphite reaction chamber ka mma.
2.4 Ọdịdị elu nke wafer epitaxial
Foto nke 6 na-egosi onyonyo AFM nke elu nke wafers epitaxial 150 mm na 200 mm SiC. A pụrụ ịhụ site na onyonyo ahụ na mgbọrọgwụ elu nke pụtara oke ike nke Ra nke wafers epitaxial 150 mm na 200 mm bụ 0.129 nm na 0.113 nm n'otu n'otu, elu nke oyi akwa epitaxial dịkwa ire ụtọ na-enweghị ihe ngosipụta nchịkọta macro-step doro anya. Ihe a na-egosi na uto nke oyi akwa epitaxial na-anọgide na-enwe ọnọdụ uto usoro nzọụkwụ n'oge usoro epitaxial dum, ọ dịghịkwa nchịkọta nzọụkwụ na-eme. A pụrụ ịhụ na site na iji usoro uto epitaxial kachasị mma, enwere ike nweta akwa epitaxial dị nro na substrates 150 mm na 200 mm dị ala.
Mmechi 3
E ji ngwa uto epitaxial SiC nke 200 mm SiC nke e mepụtara n'onwe ya kwadebe wafer epitaxial nke 150 mm na 200 mm, e mekwara usoro epitaxial nke dị nhata nke dabara na 150 mm na 200 mm. Ọkwa uto epitaxial nwere ike ịdị elu karịa 60 μm/h. Ọ bụ ezie na ọ na-emezu ihe achọrọ maka epitaxial dị elu, ịdị mma nke epitaxial wafer dị mma nke ukwuu. Enwere ike ijikwa nha nhata ọkpụrụkpụ nke wafer epitaxial SiC nke 150 mm na 200 mm n'ime 1.5%, nha nhata nke mkpokọta ahụ erughị 3%, njupụta ntụpọ na-egbu egbu erughị 0.3 particles/cm2, na nha nhata nke mgbọrọgwụ elu epitaxial Ra nke dị ala karịa 0.15 nm. Ihe ngosi usoro isi nke wafer epitaxial dị n'ọkwa dị elu na ụlọ ọrụ ahụ.
Isi mmalite: Ngwa pụrụ iche nke ụlọ ọrụ eletrọniki
Odee: Xie Tianle, Li Ping, Yang Yu, Gong Xiaoliang, Ba Sai, Chen Guoqin, Wan Shengqiang
(Ụlọ Ọrụ Nnyocha nke 48th nke China Electronics Technology Group Corporation, Changsha, Hunan 410111)
Oge ozi: Sep-04-2024