1. Main processes of plasma enhanced chemical vapor deposition
Plasma enhanced chemical vapor deposition (PECVD) is a new technology for the growth of thin films by chemical reaction of gase...
In high-temperature crystal growth and epitaxy/deposition equipment, a graphite crucible plays three roles at once: a thermal boundary, a reaction interface, and a potential contamination source / ...
In a certain packaging process, packaging materials with different thermal expansion coefficients are used. During the packaging process, the wafer is placed on the packaging substrate, and then he...
① It is a key carrier material in the production process of photovoltaic cells
Among silicon carbide structural ceramics, the photovoltaic industry of silicon carbide boat supports has developed at...
Silicon carbide (SiC) ceramics have long been widely used in various advanced manufacturing fields due to their high hardness, high strength, small coefficient of thermal expansion, high thermal co...
The basic process of SiC crystal growth is divided into sublimation and decomposition of raw materials at high temperature, transportation of gas phase substances under the action of temperature gr...