Layụ epitaxial bụ ihe nkiri dị gịrịgịrị nke otu kristal a na-akụ n'elu ihe mkpuchi wafer site na usoro epitaxial; a na-akpọ wafer substrate na ihe nkiri epitaxial n'ozuzu ha dị ka wafer epitaxial. N'ime ihe ndị a, ịkọpụta layụ epitaxial silicon carbide na ihe mkpuchi silicon carbide conductive na-emepụta wafer epitaxial silicon carbide yiri nke ahụ, nke enwere ike imepụta ọzọ ka ọ bụrụ ngwaọrụ ike dịka Schottky diodes, MOSFETs, na IGBTs. Ụdị substrate kachasị eji bụ substrate 4H-SiC.
Ebe ọ bụ na ihe fọrọ nke nta ka ọ bụrụ ngwaọrụ niile ka e ji akwa epitaxial rụọ, ịdị mma nke akwa epitaxial nwere mmetụta dị ukwuu na arụmọrụ ngwaọrụ. Agbanyeghị, nhazi kristal na substrate na-emetụta ịdị mma nke akwa epitaxial, na-etinye ya n'ọnọdụ dị oke mkpa n'ọrụ ahụ ma na-arụ ọrụ dị mkpa na mmepe ya.
Ụzọ ndị bụ isi e si akwadebe akwa epitaxial silicon carbide gụnyere: vapor deposition; liquid phase epitaxy (LPE); molecular beam epitaxy (MBE); na chemical vapor deposition (CVD). N'ime ndị a, chemical vapor deposition (CVD) bụ usoro kachasị eji eme ihe maka 4H-SiC homogeneous epitaxy. 4H-SiC CVD epitaxy na-ejikarị ngwa CVD eme ihe, nke na-eme ka nhazi kristal 4H-SiC na-aga n'ihu n'okpuru okpomọkụ dị elu.
N'ime ngwa CVD, a pụghị itinye ihe mkpuchi ahụ kpọmkwem n'elu ígwè ma ọ bụ naanị tinye ya na ntọala maka itinye ihe mkpuchi epitaxial, ebe nke a gụnyere ihe dị iche iche na-emetụta ya dịka ntụziaka nke gas (kwụ ọtọ, kwụ ọtọ), okpomọkụ, nrụgide, idozi, na mmetọ sitere na ihe ndị na-awụpụ ihe. Ya mere, achọrọ ntọala nkwado; a na-etinye ihe mkpuchi ahụ na tray, a na-emekwa ihe mkpuchi epitaxial na ihe mkpuchi ahụ site na iji teknụzụ CVD. Ntọala nkwado a bụ ntọala graphite ejiri SiC kpuchie.
Dịka ihe dị mkpa, ihe mejupụtara graphite nwere ike dị elu na modulus pụrụ iche, yana ezigbo ujo okpomọkụ na iguzogide nchara. Agbanyeghị, n'oge mmepụta, graphite na-emebi emebi na mwụfu ntụ n'ihi gas na-emebi emebi na ihe ndị ọzọ na-emepụta organometallic, nke na-ebelata ndụ ọrụ nke substrate ahụ nke ukwuu. N'otu oge ahụ, ntụ graphite shed nwere ike imerụ ibe ya. N'ime mmepụta nke wafers epitaxial silicon carbide, ọ na-esiwanye ike imezu ihe achọrọ maka ihe graphite na-esi ike, na-egbochi mmepe ha na ojiji bara uru nke ukwuu. N'ihi ya,teknụzụ mkpuchiapụtala dị ka ihe ngwọta.
Uru nke mkpuchi SiC na ụlọ ọrụ Semiconductor
Njirimara anụ ahụ na kemịkalụ nke mkpuchi ahụ ga-emezurịrị ihe achọrọ siri ike maka iguzogide okpomọkụ dị elu na nchara, ebe ọ bụ na ihe ndị a na-emetụta mmepụta na ndụ ngwaahịa ozugbo. Ihe SiC nwere ike dị elu, ike dị elu, obere coefficient nke mgbasawanye okpomọkụ, na njikwa okpomọkụ dị mma, na-eme ka ọ bụrụ ihe dị oke mkpa maka nhazi na semiconductor dị elu. Mgbe etinyere ya na ihe ndị e ji graphite mee, uru ya gụnyere:
1) SiC anaghị emebi emebi ma nwee ike ịgbaze ihe ndị dị na graphite kpamkpam. Oke njupụta ya na-egbochi mmebi site na gas na-emebi emebi.
2) SiC nwere ike ime ka okpomọkụ dị elu ma nwee ike ijikọ ya nke ọma na ihe e ji graphite mee, na-eme ka mkpuchi ahụ dịgide ọbụlagodi mgbe usoro okpomọkụ dị elu na-agbanwe agbanwe ugboro ugboro.
3) SiC nwere ezigbo nkwụsi ike kemịkalụ, na-egbochi mmebi mkpuchi n'ebe okpomọkụ dị elu na ikuku na-emebi emebi.
Ọzọkwa, ọkụ epitaxial nke e ji ihe dị iche iche mee chọrọ tray graphite nwere nkọwapụta arụmọrụ kpọmkwem. Oke mmụba okpomọkụ nke ihe graphite ga-adaba na okpomọkụ uto nke ọkụ epitaxial. Dịka ọmụmaatụ, ebe ọ bụ na okpomọkụ uto maka silicon carbide epitaxy dị elu, a chọrọ tray nwere oke nhazi nke oke mmụba okpomọkụ. Oke mmụba okpomọkụ nke SiC dị obere karịa nke graphite, nke na-eme ka ọ bụrụ ihe kacha mma maka mkpuchi elu nke ihe ndị dị na graphite.
SiC dị n'ọtụtụ ụdị kristal, nke kachasị ugbu a bụ ụdị 3C, 4H, na 6H, nke ọ bụla na-eje ozi dị iche iche. Dịka ọmụmaatụ, a na-eji 4H-SiC emepụta ngwaọrụ ike dị elu; 6H-SiC bụ nke kachasị kwụsie ike ma ejiri ya rụpụta ngwaọrụ optoelectronic; a na-ejikwa 3C-SiC, n'ihi myirịta nhazi ya na GaN, emepụta akwa epitaxial GaN maka imepụta ngwaọrụ SiC-GaN RF. A na-akpọkarị 3C-SiC β-SiC. Ngwa dị mkpa nke β-SiC bụ dị ka ihe mkpuchi dị gịrịgịrị na ihe mkpuchi; n'ihi ya, β-SiC bụ ihe bụ isi eji eme mkpuchi ugbu a.
Dịka ihe a na-ejikarị eme ihe na mmepụta semiconductor, a na-ejikarị mkpuchi SiC eme ihe na usoro dịka nkwadebe substrate, epitaxy, oxidation na diffusion, etching, na ion implantation. Njirimara anụ ahụ na kemịkalụ nke mkpuchi ahụ ga-emezurịrị ihe achọrọ siri ike maka iguzogide okpomọkụ dị elu na iguzogide nchara, ebe ndị a na-emetụta mmepụta ngwaahịa na ndụ ya ozugbo. N'ihi ya, nkwadebe nke mkpuchi SiC dị oke mkpa.
Usoro maka Ịkwadebe Mkpuchi Silicon Carbide
Ugbu a, ụzọ ndị bụ isi e si akwadebe mkpuchi SiC gụnyere usoro sol-gel, usoro itinye ihe, mkpuchi ahịhịa, ịgbasa plasma, mmeghachi omume vapor kemịkalụ (CVR), na deposition nke vapor kemịkalụ (CVD).
Usoro itinye
Usoro a bụ ụdị sintering siri ike nke nwere oke okpomọkụ. Ọ na-ejikarị ngwakọta nke ntụ silicon (Si) na ntụ carbon (C) dị ka ntụ e tinyere. A na-etinye ihe e tinyere graphite n'ime ntụ e tinyere ma sie ya na okpomọkụ dị elu n'ime ikuku gas na-adịghị agbanwe agbanwe, na-emecha mepụta mkpuchi SiC n'elu ihe e tinyere graphite. Usoro a nwere usoro dị mfe na ezigbo njikọta n'etiti ihe e tinyere na ihe e tinyere; agbanyeghị, mkpuchi ahụ na-egosi otu nha anya na-adịghị mma n'akụkụ ọkpụrụkpụ ma na-enwekarị ike ịmepụta ọtụtụ pores, na-ebute enweghị ike iguzogide oxidation.
Usoro Mkpuchi Ahịhịa
Usoro mkpuchi ahịhịa gụnyere itinye ihe mmiri mmiri n'elu ihe mejupụtara graphite, wee tee ya n'ọkụ kpọmkwem iji mepụta mkpuchi ahụ. Usoro a dị mfe ma dịkwa ọnụ ala; agbanyeghị, mkpuchi ahụ na-egosi njikọ na-adịghị ike na ihe mejupụtara ya, enweghị otu nha, ọ dịkwa obere ma nwee obere iguzogide oxidation, nke chọrọ ụzọ mgbakwunye.
Usoro Ịgba Plasma
Usoro ịgbasa plasma gụnyere iji egbe plasma fesa ihe gbazere agbaze ma ọ bụ nke ọkara agbaze n'elu ihe mejupụtara graphite, nke na-eme ka ọ sie ike ma jikọta ya iji mepụta mkpuchi. Usoro a dị mfe iji ma nwee ike imepụta mkpuchi silicon carbide dị oke arọ; agbanyeghị, mkpuchi ndị a na-esi na ya apụta na-adịkarị obere, na-eduga na enweghị ike iguzogide oxidation. Ya mere, a na-ejikarị ya eme ihe n'ịkwadebe mkpuchi SiC iji melite mma mkpuchi.
Usoro Gel-Sol
Ụzọ gel-sol bụ isi ihe na-agụnye ịkwadebe ihe ngwọta sol dị otu, nke doro anya iji kpuchie elu ihe mkpuchi ahụ. Mgbe ọ kpọchara ka ọ ghọọ gel, a na-ete ihe ahụ ka ọ bụrụ mkpuchi ahụ. Usoro a dị mfe iji rụọ ọrụ ma dịkwa ọnụ ala; agbanyeghị, mkpuchi ndị a na-esi na ya apụta na-enwe nsogbu dịka obere iguzogide okpomọkụ na-adịghị mma na ọchịchọ ịgbawa, na-egbochi ojiji ha n'ọtụtụ ebe.
Usoro Mmeghachi Omume Uzuoku Kemịkalụ (CVR)
CVR na-eji ntụ ntụ Si na SiO₂ emepụta uzuoku SiO₂ n'oge okpomọkụ dị elu, na-akpali usoro mmeghachi omume kemịkalụ n'elu ihe mkpuchi Si iji mepụta mkpuchi SiC. Mkpuchi SiC nke usoro a mepụtara na-ejikọ nke ọma na ihe mkpuchi ahụ; agbanyeghị, okpomọkụ mmeghachi omume dị elu, ọnụ ahịa ya dịkwa elu.
Mwepụ Uzuoku Kemịkalụ (CVD)
Ugbu a, CVD bụ teknụzụ bụ isi maka ịkwadebe mkpuchi SiC n'elu elu ala. Usoro bụ isi gụnyere usoro mmeghachi omume physicochemical n'etiti ihe mmeghachi omume gas na elu ala ...
Ụdị na mkpuchi SiC
A na-ejikarị mkpuchi SiC eme ihe dị ka ihe oriri na mmepụta semiconductor, yana ihe ndị dị mkpa na-egosi arụmọrụ gụnyere otu mkpuchi, oke mgbasa okpomọkụ, na ike okpomọkụ. Ọ bụ ezie na enwere nnukwu ọchịchọ maka mkpuchi SiC n'ime obodo na China, teknụzụ ahụ ka dị obere. Na mba ofesi, naanị otu ụlọ ọrụ US na-arụ ọrụ na ngalaba a, ngwaahịa ya dịkwa oke ọnụ.
Ụgbọ mmiri kristalbụ ihe oriri e ji eme ihe n'ime mmepụta epitaxial nke nwere ike dochie graphite ejiri SiC kpuchie, ọ bụ ezie na olu ahịa dị obere. Ihe na-esote bụ graphite ejiri TaC kpuchie, nke na-enye nguzogide nchara kemịkalụ ka mma karịa graphite gba ọtọ ma ọ bụ graphite ejiri SiC kpuchie, mana ọ dị oke ọnụ ma ka dị na mmalite mmepe. Ugbu a, ụlọ ọrụ ime obodo dịkaLiufang semiconductor, Semicera, naVetek Semiconductorna-arụ ọrụ na R&D na ngalaba a.
Oge ozi: Mee-20-2026