Urupapuro rwa epitaxial ni agace gato k’urukiramende gakura ku gice cya wafer binyuze mu nzira ya epitaxial; agapapuro ka substrate na filimi ya epitaxial byose hamwe byitwa wafer ya epitaxial. Muri ibyo, gukura urwego rwa epitaxial rwa silicon carbide ku gice cya silicon carbide gitanga wafer ya epitaxial ya silicon carbide ihuye, ishobora gukorwamo ibikoresho by’amashanyarazi nka Schottky diodes, MOSFETs, na IGBTs. Ubwoko bwa substrate bukoreshwa cyane ni substrate ya 4H-SiC.
Kubera ko ibikoresho hafi ya byose bikorwa ku nganda zikora ibikoresho bya epitaxial, ubwiza bw'inganda zikora ibikoresho bigira ingaruka zikomeye ku mikorere y'ibikoresho. Ariko, ubwiza bw'inganda zikora ibikoresho bya epitaxial buterwa no gutunganya ibikoresho bya kristale na substrate, bigatuma biba mu bihe by'ingenzi mu nganda kandi bigira uruhare runini mu iterambere ryabyo.
Uburyo bw'ibanze bwo gutegura urwego rwa epitaxial rwa silikoni karubide burimo: gushyira umwuka mu kirere; epitaxy y'ikigero cy'amazi (LPE); epitaxy y'imirasire ya molekile (MBE); na chemical vapor deposition (CVD). Muri ubwo buryo, gushyira umwuka mu kirere (CVD) ni bwo buryo bukoreshwa cyane kuri epitaxy ya 4H-SiC ihuye. Epitaxy ya 4H-SiC CVD ikunze gukoresha ibikoresho bya CVD, bituma imiterere ya kristale ya 4H-SiC ikomeza mu gihe cy'ubushyuhe bwinshi.
Mu bikoresho bya CVD, substrate ntishobora gushyirwa ku buso bw'icyuma cyangwa ngo ishyirwe ku rufatiro rwo gushyiramo epitaxial, kuko ibi bikubiyemo ibintu bitandukanye bigira ingaruka nko kwerekeza kw'amazi (aho umwuka unyura, uhagaze), ubushyuhe, umuvuduko, guhagarara, no kwanduzwa n'uduce twamenetse. Kubwibyo, hakenewe inkingi yo gushyigikira; substrate ishyirwa ku isahani, hanyuma epitaxial ishyirwa ku rufatiro ikoreshwa hakoreshejwe ikoranabuhanga rya CVD. Iyi shingiro yo gushyigikira ni inkingi ya grafiti ipfundikiye ya SiC.
Nk'igice cy'ingenzi, icyuma cya grafiti gifite imbaraga nyinshi na modulus yihariye, ndetse n'ingufu nziza z'ubushyuhe no kurwanya ingese. Ariko, mu gihe cyo gukora, graphite ihura n'ingese n'ifu bitewe n'imyuka yangiza n'ibisigazwa by'ibinyabutabire bya organometallic, bigabanya cyane igihe cy'imikorere ya icyuma. Muri icyo gihe, ifu ya graphite ishobora kwanduza utubumbe. Mu gukora ibyuma bya silicon carbide epitaxial wafers, byarushijeho kugorana kuzuza ibisabwa bikomeye ku bikoresho bya graphite, bigabanya cyane iterambere ryabyo n'ikoreshwa ryabyo mu buryo bufatika. Kubera iyo mpamvu,ikoranabuhanga ryo gusigabyagaragaye nk'igisubizo.
Ibyiza byo gusiga SiC mu nganda zikora ibikoresho bya semiconductor
Imiterere y’ibinyabutabire n’imiti by’imyambaro bigomba kuzuza ibisabwa cyane kugira ngo birwanye ubushyuhe bwinshi n’ingese, kuko bigira ingaruka ku musaruro n’igihe bizamara. Ibikoresho bya SiC bifite imbaraga nyinshi, ubukana bwinshi, ingano nto y’ubushyuhe, kandi bifite ubushobozi bwo gutwara ubushyuhe bwinshi, bigatuma biba ibikoresho by’ingenzi mu by’imiterere n’ibinyabutabire. Iyo bikoreshejwe ku bikoresho bya grafiti, ibyiza byabyo birimo:
1) SiC irwanya ingese kandi ishobora gufunga neza igice cya grafiti. Ubucucike bwayo buri hejuru burinda kwangirika kw'imyuka ihumanya.
2) SiC ifite ubushobozi bwo gutwara ubushyuhe bwinshi n'imbaraga zikomeye zo gufatanya na graphite substrate, bigatuma igitambaro gikomeza kuba cyiza nubwo cyaba kimeze nk'igihe cy'ubushyuhe buri hasi cyane.
3) SiC ifite ubushobozi bwo kudahinduka mu buryo bukabije, ikarinda ko irangi rigwa mu kirere gishyuha cyane kandi kirimo kwangirika.
Byongeye kandi, amatanura ya epitaxial akozwe mu bikoresho bitandukanye akeneye utwuma twa grafiti dufite imiterere yihariye. Igipimo cyo kwaguka k'ubushyuhe bw'ibikoresho bya grafiti kigomba kuba gihuye n'ubushyuhe bw'ikura ry'itanura rya epitaxial. Urugero, kubera ko ubushyuhe bw'ikura rya silicon carbide epitaxy ari hejuru, utwuma dufite urugero rwo hejuru rw'igipimo cyo kwaguka k'ubushyuhe burakenewe. Igipimo cyo kwaguka k'ubushyuhe cya SiC gitandukanye cyane n'icya grafiti, bigatuma ari cyo gikoresho gikunzwe cyane cyo gusiga hejuru y'uduce twa grafiti.
SiC iboneka mu buryo bwinshi bwa kristu, aho ubu ikunze gukoreshwa cyane ari ubwoko bwa 3C, 4H, na 6H, buri bwoko butanga serivisi zitandukanye. Urugero, 4H-SiC ikoreshwa mu gukora ibikoresho bifite ingufu nyinshi; 6H-SiC ni yo ihamye cyane kandi ikoreshwa mu gukora ibikoresho bya optoelectronic; naho 3C-SiC, bitewe n'imiterere yayo isa na GaN, ikoreshwa mu gukora urwego rwa GaN epitaxial rwo gukora ibikoresho bya SiC-GaN RF. 3C-SiC kandi ikunze kwitwa β-SiC. Ikoreshwa ry'ingenzi rya β-SiC ni nk'ibikoresho bito kandi bitwikiriye; bityo, β-SiC ubu ni yo bikoresho by'ibanze bikoreshwa mu gutwikirira.
Nk'ikintu gikoreshwa cyane mu gukora semiconductor, SiC coatings ikoreshwa cyane cyane mu bikorwa nko gutegura substrate, epitaxy, oxidation na diffusion, etching, no gutera iyoni. Imiterere y'umubiri n'imiti by'igitambaro bigomba kuzuza ibisabwa cyane kugira ngo birwane n'ubushyuhe bwinshi no kurwanya ingese, kuko bigira ingaruka ku musaruro w'ibicuruzwa no ku gihe cyabyo. Kubera iyo mpamvu, gutegura SiC coatings ni ingenzi cyane.
Uburyo bwo gutegura irangi rya silicon carbide
Muri iki gihe, uburyo bw'ibanze bwo gutegura irangi rya SiC burimo uburyo bwa sol-gel, uburyo bwo gushyiramo, irangi ry'uburoso, irangi rya plasma, uburyo bwo gusohora umwuka wa chemical (CVR), n'uburyo bwo gushyira umwuka wa chemical (CVD).
Uburyo bwo Gushyiramo
Ubu buryo ni ubwoko bw'ubushyuhe bwinshi bukoresha amashanyarazi asanzwe. Bukoresha cyane cyane uruvange rw'ifu ya silikoni (Si) n'ifu ya karuboni (C) nk'ifu ikoreshwa. Igice cya grafiti gishyirwa mu ifu ikoreshwa hanyuma kigacukurwa ku bushyuhe bwinshi mu kirere cy'umwuka udafite umwuka, amaherezo kikarema igishishwa cya SiC ku buso bwa graphite. Ubu buryo bufite inzira yoroshye kandi bufatana neza hagati y'igishishwa n'igice; icyakora, igishishwa kigaragaza uburinganire buke mu cyerekezo cy'ubugari kandi gishobora kugira imyenge myinshi, bigatuma habaho ubudahangarwa buke bwo kurwanya ogisijeni.
Uburyo bwo gusiga uburoso
Uburyo bwo gusiga uburoso bukubiyemo cyane cyane gushyira ibikoresho fatizo by'amazi ku buso bwa grafiti, hanyuma bigakurikirwa no gusiga ibikoresho ku bushyuhe runaka kugira ngo bikore irangi. Ubu buryo bworoshye kandi buhendutse; icyakora, irangi rivamo rigaragaza ko rifatana nabi n'irangi, ko ritameze neza, kandi ni rito cyane kandi ridashobora gushyuha cyane, bigasaba uburyo bw'inyongera.
Uburyo bwo gutera plasma
Uburyo bwo gutera plasma bukoresha imbunda ya plasma kugira ngo itere ibinyabutabire byashongeshejwe cyangwa byashongeshejwe ku buso bwa graphite substrate, hanyuma igakomeza gukomera no gufatana kugira ngo ikore irangi. Ubu buryo bworoshye gukoresha kandi bushobora gukora irangi rya silicon carbide rinini; icyakora, irangi rivamo akenshi riba rito cyane, bigatuma ridashobora kurwanya ogisijeni neza. Kubwibyo, muri rusange ikoreshwa mu gutegura irangi rya SiC rivanze kugira ngo inoze ireme rya rangi.
Uburyo bwa Gel-Sol
Uburyo bwa gel-sol bukubiyemo cyane cyane gutegura umuti umwe kandi ubonerana wo gutwikira ubuso bw'ubutaka. Nyuma yo kuma mu gikoresho cya gel, ibikoresho biracukurwa kugira ngo bikore igipfundikizo. Ubu buryo bworoshye gukoresha kandi buhendutse; icyakora, igipfundikizo kivamo kigira ibibazo nko kudashyuha cyane no kudacika, bigatuma bigabanuka, bigatuma bigabanuka cyane.
Uburyo bwo gukora ikizamini cy'umwuka ushyushye (CVR)
CVR ikoresha cyane cyane ifu ya Si na SiO₂ kugira ngo ikore umwuka wa SiO₂ ku bushyuhe bwinshi, bigatera urukurikirane rw'ibinyabutabire ku buso bwa substrate ya Si kugira ngo habeho irangi rya SiC. Irangi rya SiC rikorwa n'ubu buryo rifatana neza na substrate; icyakora, ubushyuhe bwa reaction ni bwinshi, kandi igiciro nacyo kiri hejuru cyane.
Gukuraho umwuka w'ubumara mu mubiri (CVD)
CVD ubu niyo koranabuhanga ry’ibanze ryo gutegura irangi rya SiC ku buso bwa substrate. Inzira nyamukuru ikubiyemo urukurikirane rw’ibikorwa bya fizikiki hagati y’ibinyabutabire by’imyuka n’ubuso bwa substrate, amaherezo bigatera irangi rya SiC. Irangi rya SiC rikorwa n’ikoranabuhanga rya CVD rifatana neza n’ubuso bwa substrate kandi rishobora kunoza neza ubudahangarwa bw’ibikoresho bya substrate no kudahangarwa; icyakora, ubu buryo busaba igihe kirekire cyo gushyiramo, kandi imyuka ya reaction ikubiyemo ibice bimwe na bimwe by’uburozi.
Impinduka mu irangi rya SiC
Irangi rya SiC rikoreshwa cyane cyane nk'ibikoresho bikoreshwa mu nganda za semiconductor, hamwe n'ibipimo by'ingenzi by'imikorere birimo uburinganire bw'irangi, ingano y'ubushyuhe, n'ubushobozi bw'ubushyuhe. Nubwo hari icyifuzo kinini cy'irangi rya SiC mu Bushinwa mu gihugu, ikoranabuhanga ntirirashaje. Mu mahanga, hari ikigo kimwe cyo muri Amerika gikorera muri uru rwego, kandi ibicuruzwa byacyo birahenze ugereranyije.
Ubwato bwa kristuni ibikoresho bikoreshwa mu gukora epitaxial bishobora gusimbura grafiti ya SiC, nubwo ingano y'isoko ari nto. Ikurikiraho ni grafiti ya TaC, itanga ubushobozi bwo kurwanya ingese kurusha grafiti yambaye ubusa cyangwa grafiti ya SiC, ariko irahenze cyane kandi iracyari mu ntangiriro z'iterambere. Kuri ubu, amasosiyete yo mu gihugu nkaIgice cya Liufang, Semicera, naVetek Semiconductorbakora ubushakashatsi n'iterambere muri uru rwego.
Igihe cyo kohereza: Gicurasi-20-2026