Chikamu che epitaxial ifirimu rakatetepa remakristaro rimwe chete rinokura pachikamu chewafer kuburikidza nemaitiro epitaxial; chikamu chewafer che substrate nechikamu che epitaxial firimu zvinonzi wafer ye epitaxial. Pakati peizvi, kugadzira chikamu chesilicon carbide epitaxial pane chikamu che conductive silicon carbide substrate kunoburitsa chikamu chesilicon carbide epitaxial epitaxial, chinogona kugadzirwazve kuita zvishandiso zvemagetsi zvakaita seSchottky diodes, MOSFETs, uye IGBTs. Chikamu che substrate chinoshandiswa zvakanyanya i4H-SiC substrate.
Sezvo michina yese yakagadzirwa pa epitaxial layers, mhando ye epitaxial layer ine chekuita zvikuru nekushanda kwemuchina. Zvisinei, mhando ye epitaxial layer inokanganiswa nekugadzirwa kwekristaro ne substrate, zvichiita kuti ive panguva yakakosha muindasitiri uye ichitamba basa guru mukukura kwayo.
Nzira huru dzekugadzira silicon carbide epitaxial layers dzinosanganisira: vapor deposition; liquid phase epitaxy (LPE); molecular beam epitaxy (MBE); uye chemical vapor deposition (CVD). Pakati peizvi, chemical vapor deposition (CVD) ndiyo nzira inonyanya kushandiswa ye4H-SiC homogeneous epitaxy. 4H-SiC CVD epitaxy inowanzo shandisa michina yeCVD, iyo inovimbisa kuenderera mberi kwechimiro chekristaro che4H-SiC pasi pekupisa kwakanyanya.
Mumidziyo yeCVD, substrate haigone kuiswa zvakananga pamusoro pesimbi kana kungoiswa pahwaro hwekuisa epitaxial, sezvo izvi zvinosanganisira zvinhu zvakasiyana-siyana zvinopesvedzera zvakaita segwara rekuyerera kwegasi (rakatambanuka, rakamira), tembiricha, kumanikidzwa, kugadzikana, uye kusvibiswa kubva mukubuda kwezvikamu. Saka, hwaro hwekutsigira hunodiwa; substrate inoiswa patireyi, uye kuisa epitaxial kunozoitwa pahwaro uchishandisa tekinoroji yeCVD. Hwaro hwekutsigira uhwu hwaro hwegraphite hwakaputirwa neSiC.
Sechikamu chikuru, graphite substrate ine simba rakawanda uye modulus chaiyo, pamwe nekupisa kwakanaka uye kuramba ngura. Zvisinei, panguva yekugadzira, graphite inogona kukanganiswa nengura uye kudonha kweupfu nekuda kwemagasi anoparadza uye mamorekuru e organometallic, zvichideredza zvakanyanya hupenyu hwebasa resubstrate. Panguva imwe chete, shed graphite powder inogona kusvibisa machipisi. Mukugadzirwa kwesilicon carbide epitaxial wafers, zvave zvakaoma kusangana nezvinodiwa zve graphite zvakanyanya, zvichideredza zvakanyanya kugadzirwa kwayo uye kushandiswa kwayo. Nekuda kweizvozvo,tekinoroji yekuputirayave mhinduro.
Mabhenefiti eSiC Coatings muSemiconductor Industry
Hunhu hwemuviri uye hwemakemikari hwemachira hunofanira kusangana nezvinodiwa zvakasimba zvekudzivirira kupisa kwakanyanya uye ngura, sezvo izvi zvichikanganisa zvakananga goho rezvigadzirwa uye hupenyu hwese. SiC material ine simba rakawanda, kuomarara kwakanyanya, coefficient yakaderera yekuwedzera kupisa, uye conductivity yakanaka yekupisa, zvichiita kuti ive chinhu chakakosha chechimiro uye semiconductor. Kana ikashandiswa kune graphite substrates, zvakanakira zvayo zvinosanganisira:
1) SiC inodzivirira ngura uye inogona kufukidza zvizere graphite substrate. Kuwanda kwayo kunodzivirira kukuvara kunokonzerwa nemagasi anoparadza.
2) SiC ine simba guru rekupisa uye ine simba rakasimba rekubatanidza ne graphite substrate, zvichiita kuti coating irambe yakadaro kunyangwe mushure mekudzokororwa kwekupisa kwakaderera.
3) SiC ine kugadzikana kwakanaka kwemakemikari, ichidzivirira kutadza kwekuputira mumhepo inopisa uye inoparadza.
Uyezve, maovheni epitaxial akagadzirwa nezvinhu zvakasiyana anoda matireyi egrafiti ane maitiro chaiwo. Kuwanda kwekuwedzera kwemafuta egrafiti kunofanirwa kuenderana nekupisa kwekukura kweovheni reepitaxial. Semuenzaniso, sezvo tembiricha yekukura yesilicon carbide epitaxy yakakwira, matireyi ane mwero wepamusoro wekuenzanisa kwekuwedzera kwemafuta ekupisa anodiwa. Kuwanda kwekuwedzera kwemafuta eSiC kwakasiyana zvishoma nekwegraphite, zvichiita kuti ive chinhu chinofarirwa kuputira pamusoro pegrafiti substrates.
SiC inowanikwa mumhando dzakasiyana dzekristaro, uye inonyanya kushandiswa pari zvino iri mhando dze3C, 4H, uye 6H, imwe neimwe ichipa mashandisirwo akasiyana. Semuenzaniso, 4H-SiC inoshandiswa kugadzira michina ine simba guru; 6H-SiC ndiyo yakagadzikana zvakanyanya uye inoshandiswa kugadzira michina ye optoelectronic; uye 3C-SiC, nekuda kwekufanana kwayo neGaN, inoshandiswa kugadzira GaN epitaxial layers yekugadzira michina yeSiC-GaN RF. 3C-SiC inowanzonziwo β-SiC. Kushandiswa kukuru kweβ-SiC ndeye thin-film uye coating material; nekuda kweizvozvo, β-SiC parizvino ndiyo inonyanya kushandiswa pa coating.
Sechinhu chinoshandiswa zvakanyanya mukugadzira semiconductor, SiC coatings inonyanya kushandiswa mumabasa akadai sekugadzirira substrate, epitaxy, oxidation and diffusion, etching, uye ion implantation. Hunhu hwemuviri nemakemikari ecoatings hunofanirwa kusangana nezvinodiwa zvakasimba zvekudzivirira kupisa kwakanyanya uye kuramba ngura, sezvo izvi zvichikanganisa zvakananga goho rezvigadzirwa uye hupenyu hwese. Nekuda kweizvozvo, kugadzirira SiC coatings kwakakosha.
Maitiro Ekugadzirira Silicon Carbide Coatings
Parizvino, nzira huru dzekugadzirira machira eSiC dzinosanganisira nzira ye sol-gel, nzira yekuisa muchina, brush coating, plasma spraying, chemical vapor reaction (CVR), uye chemical vapor deposition (CVD).
Nzira yekuisa
Nzira iyi imhando yekupisa kwakanyanya. Inonyanya kushandisa musanganiswa weupfu hwesilicon (Si) neupfu hwecarbon (C) seupfu hwekuisa. Graphite substrate inoiswa mukati meupfu hwekuisa uye inopiswa pakupisa kwakanyanya mumhepo isina gasi, zvichizopedzisira zvaita SiC coating pamusoro pegraphite substrate. Nzira iyi ine maitiro ari nyore uye inobatana zvakanaka pakati pecoating nesubstrate; zvisinei, coating yacho inoratidza kusafanana zvakanaka munzira yekukora uye inowanzoita maburi akawanda, zvichikonzera kusasimba kwe oxidation.
Nzira Yekuputira Bhurashi
Nzira yekuputira bhurashi inonyanya kusanganisira kuisa zvinhu zvakabikwa mumvura pamusoro pegrafiti substrate, zvichiteverwa nekupukuta zvinhu patembiricha chaiyo kuti zvigadzire jira. Nzira iyi iri nyore uye inodhura zvishoma; zvisinei, jira rinobuda rinoratidza kunamira kusina kusimba pajira, kusafanana zvakanaka, uye rakatetepa uye harina kuoxidation yakawanda, zvichiita kuti pave nenzira dzekuwedzera.
Nzira yePlasma Spray
Nzira yekupfapfaidza plasma inosanganisira kushandisa pfuti yeplasma kupfapfaidza zvinhu zvakanyungudutswa kana kuti zvakanyungudutswa zvishoma pamusoro pe graphite substrate, iyo inobva yasimba uye yakabatana kuti igadzire coating. Nzira iyi iri nyore kushandisa uye inogona kugadzira coating ye silicon carbide yakakora; zvisinei, coating inobuda inowanzova yakatetepa, zvichiita kuti isakwanise kuoxidation. Saka, inowanzo shandiswa mukugadzirira SiC composite coatings kuti ivandudze kunaka kwe coating.
Nzira yeGel-Sol
Nzira yegel-sol inonyanya kugadzirira mhinduro yakafanana, yakajeka yesol kuti ifukidze pamusoro pe substrate. Mushure mekuoma kuita gel, chinhu chacho chinopisirwa kuti chigadzire coating. Nzira iyi iri nyore kushandisa uye inodhura zvishoma; zvisinei, coating inobuda inosangana nematambudziko akadai sekusagadzikana kwekupisa uye katsika kekutsemuka, zvichideredza kushandiswa kwayo kwose kwose.
Nzira yeChemical Vapor Reaction (CVR)
CVR inonyanya kushandisa hupfu hweSi neSiO₂ kugadzira utsi hweSiO₂ pakupisa kwakanyanya, zvichikonzera kutevedzana kwemakemikari pamusoro peSi substrate kuti igadzire SiC coating. SiC coating inogadzirwa nenzira iyi inobatanidzwa zvakasimba kune substrate; zvisinei, tembiricha ye reaction yakakwira, uye mutengo wacho wakakwirawo.
Kubviswa kweUtsi hweMakemikari (CVD)
CVD parizvino ndiyo tekinoroji huru yekugadzira machira eSiC pamusoro pe substrate. Maitiro makuru anosanganisira maitiro akasiyana-siyana e physicochemical pakati pemagasi reactants ne substrate surface, zvichizoguma nekuiswa kweSiC coating. Machira eSiC anogadzirwa neCVD technology anobata zvakasimba pamusoro pe substrate uye anogona kuvandudza zvinobudirira oxidation resistance ye substrate material uye ablation resistance; zvisinei, nzira iyi inoda nguva yakareba yekuiswa, uye magasi e reaction ane zvimwe zvinhu zvine chepfu.
Mafambiro muSiC Coatings
Mapendi eSiC anonyanya kushandiswa sezvinhu zvinoshandiswa mukugadzira semiconductor, ane zviyero zvakakosha zvekushanda zvinosanganisira kufanana kwependi, coefficient of thermal expansion, uye thermal conductivity. Kunyange zvazvo paine kudiwa kukuru kwependi dzeSiC muChina, tekinoroji iyi ichiri kusakara. Kunze kwenyika, kambani imwe chete yeUS inoshanda mundima iyi, uye zvigadzirwa zvayo zvinodhura zvakanyanya.
Magwa ekristarozvinhu zvinoshandiswa mukugadzira epitaxial zvinogona kutsiva SiC-coated graphite, kunyange zvazvo huwandu hwemusika huri hushoma. Chinotevera iTaC-coated graphite, iyo inopa makemikari anodzivirira ngura zviri nani pane bare graphite kana SiC-coated graphite, asi inodhura zvakanyanya uye ichiri kutanga kugadzirwa. Parizvino, makambani emuno akadai seLiufang semiconductor, SemicerauyeVetek Semiconductorvari kuita R&D munzvimbo iyi.
Nguva yekutumira: Chivabvu-20-2026