1. SiC crystal growth technology route
PVT (sublimation method),
HTCVD (high temperature CVD),
LPE (liquid phase method)
are three common SiC crystal growth methods;
The most recognized meth...
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In high-temperature crystal growth and epitaxy/deposition equipment, a graphite crucible plays three roles at once: a thermal boundary, a reaction interface, and a potential contamination source / ...