Intambo yeRhenium ecocekileyo yaseTshayina- Mocvd

Inkcazo emfutshane:


  • Indawo Yokuqala:iTshayina
  • Ulwakhiwo lwekristale:Isigaba se-FCCβ
  • Uxinano:3.21 g/cm
  • Ubunzima:IiVickers ezingama-2500
  • Ubungakanani bengqolowa:2 ~ 10μm
  • Ucoceko lweeKhemikhali:99.99995%
  • Umthamo wobushushu:640J·kg-1·K-1
  • Ubushushu bokunyibilikisa:2700℃
  • Amandla e-Felexural:I-415 Mpa (RT 4-Point)
  • IModulus kaYoung:I-430 Gpa (i-4pt bend, 1300℃)
  • Ukwandiswa kobushushu (i-CTE):4.5 10-6K-1
  • Ukuqhuba kobushushu:300 (W/MK)
  • Iinkcukacha zeMveliso

    Iithegi zeMveliso

    Singakwazi ukwanelisa abathengi bethu abahloniphekileyo ngokulula ngexabiso lethu eliphezulu, elisemgangathweni ophezulu kunye nenkonzo entle kuba besinobuchule ngakumbi kwaye sisebenza nzima kwaye sikwenza oko ngendlela engabizi kakhulu kwi-Chinese Professional Pure Rhenium Filament- Mocvd, Siyakwamkela ukuba usibuze ngokunxibelelana okanye ngeposi kwaye sinethemba lokwakha ubudlelwane bothando obusebenzayo nobunentsebenziswano.
    Singakwazi ukwanelisa abathengi bethu abahloniphekileyo ngokulula ngexabiso lethu eliphakamileyo nelihle kakhulu lokuthengisa kunye nenkonzo entle kuba besinobuchule ngakumbi kwaye sisebenza nzima kwaye sikwenza oko ngendlela engabizi kakhulu.Intambo yaseTshayina kunye neRheniumNgenxa yemisebenzi yethu engqongqo yomgangatho, kunye nenkonzo yasemva kokuthengisa, imveliso yethu iya ithandwa ngakumbi kwihlabathi liphela. Abathengi abaninzi beza kutyelela ifektri yethu baze bafake iiodolo. Kukwakho nabahlobo abaninzi bamanye amazwe abeze kubona izinto, okanye basithembise ukuba sibathengele ezinye izinto. Wamkelekile ukuba uze eTshayina, kwisixeko sethu nakwifektri yethu!


       

    Abathwali beGraphite abagqunywe yiSiC

    Ingcaciso yeMveliso

    Sigcina ukunyamezelana okusondeleyo xa sisebenzisa i-SiC coating, sisebenzisa i-machining echanekileyo ukuqinisekisa iprofayili ye-susceptor efanayo. Sikwavelisa izixhobo ezineempawu ezifanelekileyo zokumelana nombane ezisetyenziswa kwiinkqubo ezifudunyezwayo. Zonke izinto ezigqityiweyo ziza nesatifikethi sokuthobela ubumsulwa kunye nobukhulu.

    Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma iSiC ngendlela yeCVD kumphezulu wegrafiti, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulethe ikhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zithole iimolekyuli zeSiC ezicocekileyo kakhulu, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenze umaleko okhuselayo we-SIC. I-SIC eyenziweyo ibotshelelwe ngokuqinileyo kwisiseko segrafiti, inika isiseko segrafiti iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu wegrafiti ube mncinci, ungabi naPorosity, uxhathiso oluphezulu lobushushu, uxhathiso lokugqwala kunye noxhathiso lwe-oxidation.

    2

    Inkqubo ye-CVD inika ubunyulu obuphezulu kakhulu kunye noxinano lwethiyori lwe-SiC coating ngaphandle kobuqhophololo. Ngaphezu koko, njengoko i-silicon carbide iqinile kakhulu, inokupolisha ibe ngumphezulu ofana nesipili. I-CVD silicon carbide (SiC) coating inike iingenelo ezininzi kubandakanya umphezulu ococekileyo kakhulu kunye nokuqina okugqithisileyo. Njengoko iimveliso ezifakwe i-coating zisebenza kakuhle kwi-vacuum ephezulu kunye nobushushu obuphezulu, zilungele ukusetyenziswa kushishino lwe-semiconductor nakwezinye iindawo ezicocekileyo kakhulu. Sikwabonelela ngeemveliso ze-pyrolytic graphite (PG).

    Iimpawu eziphambili:

    1. Ukumelana ne-oxidation yobushushu obuphezulu:

    Ukumelana ne-oxidation kusengcono kakhulu xa amaqondo obushushu ephezulu ukuya kwi-1600 C.

    2. Ubunyulu obuphezulu: benziwa yi-chemical vapor deposition phantsi kwemeko ye-chlorination yobushushu obuphezulu.

    3. Ukumelana nokukhukuliseka: ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.

    4. Ukumelana nokugqwala: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.

    Iinkcukacha eziphambili zeengubo zeCVD-SIC:

    I-SiC-CVD

    Uxinano

    (g/cc)

    3.21

    Amandla okugobeka

    (iMpa)

    470

    Ukwandiswa kobushushu

    (10-6/K)

    4

    Ukuqhuba kobushushu

    (W/mK)

    300

    Ukusetyenziswa: I-CVD silicon carbide coating sele isetyenziswa kumashishini e-semiconductor, njenge-MOCVD tray, i-RTP kunye ne-oxide etching chamber kuba i-silicon nitride inokumelana okukhulu nobushushu kwaye inokumelana ne-plasma enamandla aphezulu.
    -I-silicon carbide isetyenziswa kakhulu kwi-semiconductor nakwi-coating.

    Amandla okubonelela:

    Iziqwenga ezili-10000 ngenyanga
    Ukupakishwa kunye nokuHanjiswa:
    Ukupakisha: Ukupakisha okuqhelekileyo nokuqinileyo
    Ingxowa yePoly + Ibhokisi + Ibhokisi + Ipalethi
    Izibuko:
    Ningbo/Shenzhen/Shanghai
    Ixesha lokukhokhela:

    Ubungakanani (Iziqwenga) 1 – 1000 >1000
    Ixesha eliqikelelweyo (iintsuku) 15 Kuza kuxoxiswana

    Singakwazi ukwanelisa abathengi bethu abahloniphekileyo ngokulula ngexabiso lethu eliphezulu, elisemgangathweni ophezulu kunye nenkonzo entle kuba besinobuchule ngakumbi kwaye sisebenza nzima kwaye sikwenza oko ngendlela engabizi kakhulu kwi-Chinese Professional Pure Rhenium Filament- Mocvd, Siyakwamkela ukuba usibuze ngokunxibelelana okanye ngeposi kwaye sinethemba lokwakha ubudlelwane bothando obusebenzayo nobunentsebenziswano.
    Ingcali yaseTshayinaIntambo yaseTshayina kunye neRheniumNgenxa yemisebenzi yethu engqongqo yomgangatho, kunye nenkonzo yasemva kokuthengisa, imveliso yethu iya ithandwa ngakumbi kwihlabathi liphela. Abathengi abaninzi beza kutyelela ifektri yethu baze bafake iiodolo. Kukwakho nabahlobo abaninzi bamanye amazwe abeze kubona izinto, okanye basithembise ukuba sibathengele ezinye izinto. Wamkelekile ukuba uze eTshayina, kwisixeko sethu nakwifektri yethu!


  • Ngaphambili:
  • Okulandelayo:

  • Incoko ye-WhatsApp kwi-Intanethi!