Umenzi waseTshayina iSiC Coated Graphite MOCVD Epitaxy Susceptor

Inkcazo emfutshane:

Ubumsulwa < 5ppm
‣ Ukufana okuhle kwe-doping
‣ Uxinano oluphezulu kunye nokunamathela
‣ Iyamelana kakuhle nokubola kunye nokumelana nekhabhoni

‣ Ukwenziwa ngokwezifiso kobungcali
‣ Ixesha elifutshane lokufumana umvuzo
‣ Ubonelelo oluzinzileyo
‣ Ulawulo lomgangatho kunye nophuculo oluqhubekayo

I-Epitaxy yeGaN kwiSapphire(I-RGB/I-Mini/I-Micro LED);
I-Epitaxy yeGaN kwiSi Substrate(i-UVC);
I-Epitaxy yeGaN kwiSi Substrate(Isixhobo se-elektroniki);
I-Epitaxy ye-Si kwi-Si Substrate(Isekethe edibeneyo);
I-Epitaxy ye-SiC kwi-SiC Substrate(Isiseko);
I-Epitaxy ye-InP kwi-InP

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Iinkcukacha zeMveliso

Iithegi zeMveliso

I-MOCVD Susceptor esemgangathweni ophezulu ithenga kwi-intanethi eTshayina

I-wafer kufuneka idlule amanyathelo aliqela ngaphambi kokuba ilungele ukusetyenziswa kwizixhobo ze-elektroniki. Inkqubo enye ebalulekileyo yi-silicon epitaxy, apho ii-wafer zithwalwa kwi-graphite susceptors. Iimpawu kunye nomgangatho wee-susceptors zinefuthe elibalulekileyo kumgangatho womaleko we-epitaxial we-wafer.

Kwizigaba zokufakwa kwefilimu ezincinci ezifana ne-epitaxy okanye i-MOCVD, i-VET inikezela ngezixhobo zegrafiti ezicocekileyo kakhulu ezisetyenziselwa ukuxhasa ii-substrates okanye "ii-wafers". Eyona nto iphambili kule nkqubo, ezi zixhobo, ii-epitaxy susceptors okanye iiplatifomu zesathelayithi ze-MOCVD, ziqala zifakwe kwindawo yokufakwa kwefilimu:

● Ubushushu obuphezulu.
● I-vacuum ephezulu.
● Ukusetyenziswa kwezinto ezibangela igesi enamandla.
● Akukho kungcoliswa, akukho kuxobuka.
● Ukuxhathisa ii-asidi ezinamandla ngexesha lokucoca

I-VET Energy ngumvelisi wokwenyani weemveliso zegrafiti kunye ne-silicon carbide ezenzelwe wena kunye ne-coating ye-semiconductor kunye ne-photovoltaic industry. Iqela lethu lobuchwephesha livela kumaziko ophando aphambili asekhaya, linokubonelela ngezisombululo zezinto zobungcali ngakumbi kuwe.

Sihlala siphuhlisa iinkqubo eziphambili ukuze sinikezele ngezixhobo eziphucukileyo, kwaye sisebenze ubuchwepheshe obukhethekileyo obunelungelo lobunikazi, obunokwenza ukubopha phakathi kwengubo kunye nesiseko kube nzima kwaye kungabi lula ukwahlukana.

Iimpawu zeemveliso zethu:

1. Ukumelana ne-oxidation yobushushu obuphezulu ukuya kuthi ga kwi-1700℃.
2. Ubunyulu obuphezulu kunye nokufana kobushushu
3. Ukumelana nokugqwala okugqwesileyo: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.
4. Ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.
5. Ubomi benkonzo obude kwaye buhlala ixesha elide

I-CVD SiC Iimpawu ezisisiseko zomzimba ze-CVD SiCugqubuthelo
Ipropati	Ixabiso eliqhelekileyo
Ulwakhiwo lwekristale	I-FCC β phase polycrystalline, ikakhulu (111) ulwalathiso
Uxinano	3.21 g/cm³
Ukuqina	Ubunzima beVickers obuyi-2500 (umthwalo we-500g)
Ubukhulu beGrain	2 ~ 10μm
Ucoceko lweeKhemikhali	99.99995%
Umthamo wobushushu	640 J·kg^-1·K^-1
Ubushushu bokunyibilikisa	2700℃
Amandla okuGuquka	I-415 MPa RT 4-point
IModulus yoLutsha	I-430 Gpa 4pt bend, 1300℃
Ukuqhuba kweThermal	300W·m^-1·K^-1
Ukwandiswa kobushushu (CTE)	4.5×10^-6K^-1