Isifudumezi seGraphite esenzelwe wena kwiSemiconductor Silicon Wafer, iSiC yokugquma

Isifudumezisi seGraphite esenziwe ngokwezifiso seSemiconductor Silicon Wafer, iSiC yokugquma umfanekiso obonakalayo

Inkcazelo emfutshane:

Inkcazo yobuGcisa	IVET-M3
Ubuninzi Bobuninzi (g/cm3)	≥1.85
Umxholo wothuthu (PPM)	≤500
Ukuqina konxweme	≥45
Ukuchasa okuKhethekileyo (μ.Ω.m)	≤12
Amandla e-Flexural (Mpa)	≥40
Amandla acinezelayo (Mpa)	≥70
Max. Ubungakanani bozinkozo (μm)	≤43
I-Coefficient yoKwandiswa kweThermal Mm/°C	≤4.4 * 10-6

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CustomizedIsifudumezi seGraphite seSemiconductor yeSilicon Wafer

Inkcazo yobuGcisa	IVET-M3
Ubuninzi Bobuninzi (g/cm3)	≥1.85
Umxholo wothuthu (PPM)	≤500
Ukuqina konxweme	≥45
Ukuchasa okuKhethekileyo (μ.Ω.m)	≤12
Amandla e-Flexural (Mpa)	≥40
Amandla acinezelayo (Mpa)	≥70
Max. Ubungakanani bozinkozo (μm)	≤43
I-Coefficient yoKwandiswa kweThermal Mm/°C	≤4.4 * 10-6

Isifudumezi seGraphite esenzelwe wena kwiSemiconductor yeSilicon Wafer

Isifudumezi seGraphite esenzelwe wena kwiSemiconductor yeSilicon Wafer

Isifudumezi seGraphite esenzelwe wena kwiSemiconductor yeSilicon Wafer

Isifudumezi seGraphite esenzelwe wena kwiSemiconductor yeSilicon Wafer

Isifudumezi seGraphite esenzelwe wena kwiSemiconductor yeSilicon Wafer

Ngaphambili: Isifudumezisi seGraphite esenziwe ngokwezifiso seNdawo eshushu / iGrafite eThermal Field

Okulandelayo: Isifudumezi seGraphite Silicon carbide (SiC) iSiC yokwambathisa iSiC iqatywe

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