Singumvelisi onamava. Siphumelele uninzi lweziqinisekiso ezibalulekileyo kwimarike yaso kuMthengisi oThembekileyo waseTshayina RP/HP/UHP High Quality Graphite Columan, sikumema wena kunye nenkampani yakho ukuba niphumelele kunye nathi kwaye nabelane ngekamva eliqaqambileyo elibonakalayo kwimarike yehlabathi.
Singabavelisi abanamava. Siphumelele uninzi lweziqinisekiso ezibalulekileyo kwimarike yaso.I-China Electrode, I-Graphite Electrode, Isebe lethu le-R&D lisoloko liyila ngeengcinga ezintsha zefashoni ukuze sikwazi ukwazisa iindlela zefashoni ezihlaziyiweyo inyanga nenyanga. Iinkqubo zethu zolawulo lwemveliso ezingqongqo zihlala ziqinisekisa iimpahla ezizinzileyo nezisemgangathweni ophezulu. Iqela lethu lezorhwebo libonelela ngeenkonzo ezifanelekileyo ngexesha elifanelekileyo. Ukuba kukho nawuphi na umdla kunye nemibuzo malunga neemveliso kunye nezisombululo zethu, khumbula ukunxibelelana nathi ngexesha. Singathanda ukuseka ubudlelwane beshishini nenkampani yakho ehloniphekileyo.
Ii-carbon / ii-carbon composite(emva koku kuthiwa “C / C okanye CFC”) luhlobo lwezinto ezidityanisiweyo ezisekelwe kwikhabhoni kwaye ziqiniswe yi-carbon fiber kunye neemveliso zayo (i-carbon fiber preform). Inamandla ekhabhoni kunye namandla aphezulu e-carbon fiber. Ineempawu ezilungileyo zoomatshini, ukumelana nobushushu, ukumelana nokugqwala, ukuxinana kunye neempawu zokuqhuba ubushushu kunye nombane.
I-CVD-SiCUkwaleka kuneempawu zesakhiwo esifanayo, izinto ezincinci, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ubunyulu obuphezulu, ukumelana ne-asidi kunye ne-alkali kunye ne-reagent yendalo, eneempawu zomzimba nezizinzileyo.
Xa kuthelekiswa nezinto zegrafiti ezicocekileyo kakhulu, igrafiti iqala ukunyibilika kwi-400C, nto leyo eya kubangela ukulahleka komgubo ngenxa yokunyibilika, nto leyo eya kubangela ungcoliseko lokusingqongileyo kwizixhobo ezingaphandle kunye namagumbi okufunxa, kwaye yonyusa ukungcola kwendawo ecocekileyo kakhulu.
Nangona kunjalo, i-SiC coating inokugcina uzinzo lomzimba kunye neekhemikhali kwi-1600 degrees, Isetyenziswa kakhulu kushishino lwanamhlanje, ngakumbi kushishino lwe-semiconductor.
Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma iSiC ngendlela yeCVD kumphezulu wegrafiti, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulethe ikhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zithole iimolekyuli zeSiC ezicocekileyo kakhulu, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenze umaleko okhuselayo we-SIC. I-SIC eyenziweyo ibotshelelwe ngokuqinileyo kwisiseko segrafiti, inika isiseko segrafiti iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu wegrafiti ube mncinci, ungabi naPorosity, uxhathiso oluphezulu lobushushu, uxhathiso lokugqwala kunye noxhathiso lwe-oxidation.
Iimpawu eziphambili:
1. Ukumelana ne-oxidation yobushushu obuphezulu:
Ukumelana ne-oxidation kusengcono kakhulu xa amaqondo obushushu ephezulu ukuya kwi-1600 C.
2. Ubunyulu obuphezulu: benziwa yi-chemical vapor deposition phantsi kwemeko ye-chlorination yobushushu obuphezulu.
3. Ukumelana nokukhukuliseka: ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.
4. Ukumelana nokugqwala: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.
Iinkcukacha eziphambili zeengubo zeCVD-SIC:
| I-SiC-CVD | ||
| Uxinano | (g/cc)
| 3.21 |
| Amandla okugobeka | (iMpa)
| 470 |
| Ukwandiswa kobushushu | (10-6/K) | 4
|
| Ukuqhuba kobushushu | (W/mK) | 300
|
