Re moetsi ea nang le boiphihlelo. Re hapa boholo ba mangolo a bohlokoa a 'maraka oa eona bakeng sa Mofani ea Tšepahalang oa China RP/HP/UHP Graphite Columan ea Boleng bo Holimo, re u mema le k'hamphani ea hau ho atleha hammoho le rona le ho arolelana bokamoso bo khanyang bo ka bonoang esale pele 'marakeng oa lefats'e ka bophara.
Re moetsi ea nang le boiphihlelo. Re hapa boholo ba mangolo a bohlokoa a 'maraka oa eona bakeng saLi-electrode tsa Chaena, li-electrode tsa graphite, Lefapha la rona la R&D le lula le rala ka mehopolo e mecha ea feshene e le hore re ka hlahisa mekhoa ea feshene ea morao-rao khoeli le khoeli. Mekhoa ea rona e tiileng ea tsamaiso ea tlhahiso e lula e netefatsa thepa e tsitsitseng le ea boleng bo holimo. Sehlopha sa rona sa khoebo se fana ka lits'ebeletso tse sebetsang ka nako le ka katleho. Haeba ho na le thahasello le lipotso mabapi le lihlahisoa le litharollo tsa rona, hopola ho ikopanya le rona ka nako. Re ka rata ho theha kamano ea khoebo le k'hamphani ea hau e hlomphehang.
Metswako ea khabone / khabone(e tla bitsoa "C / C kapa CFC”) ke mofuta oa thepa e kopaneng e thehiloeng khaboneng 'me e matlafatsoa ke faeba ea khabone le lihlahisoa tsa eona (preform ea faeba ea khabone). E na le inertia ea khabone le matla a phahameng a faeba ea khabone. E na le thepa e ntle ea mechini, ho hanyetsa mocheso, ho hanyetsa mafome, ho damping ha khohlano le litšobotsi tsa ho tsamaisa mocheso le motlakase.
CVD-SiCHo roala ho na le litšobotsi tsa sebopeho se ts'oanang, thepa e nyane, ho hanyetsa mocheso o phahameng, ho hanyetsa oxidation, bohloeki bo phahameng, ho hanyetsa asiti le alkali le reagent ea manyolo, e nang le thepa e tsitsitseng ea 'mele le ea lik'hemik'hale.
Ha ho bapisoa le thepa ea graphite e hloekileng haholo, graphite e qala ho oxidation ho 400C, e leng se tla baka tahlehelo ea phofo ka lebaka la oxidation, e leng se fellang ka tšilafalo ea tikoloho ho lisebelisoa tsa kantle le likamore tsa vacuum, le ho eketsa litšila tsa tikoloho e hloekileng haholo.
Leha ho le jwalo, ho kwahela SiC ho ka boloka botsitso ba mmele le ba dikhemikhale ho di-degree tse 1600, E sebediswa haholo indastering ya sejwalejwale, haholoholo indastering ya semiconductor.
Khamphani ea rona e fana ka lits'ebeletso tsa ts'ebetso ea ho koahela SiC ka mokhoa oa CVD holim'a graphite, li-ceramics le lisebelisoa tse ling, e le hore likhase tse khethehileng tse nang le carbon le silicon li arabele mochesong o phahameng ho fumana limolek'hule tsa SiC tse hloekileng haholo, limolek'hule tse behiloeng holim'a thepa e koahetsoeng, li theha lera le sireletsang la SIC. SIC e entsoeng e hokahane ka thata le motheo oa graphite, e fa motheo oa graphite thepa e ikhethang, kahoo e etsa hore bokaholimo ba graphite bo be bo kopaneng, bo se nang Porosity, bo hane mocheso o phahameng, bo hane ho ts'enyeha le ho haneloa ke oxidation.
Likarolo tse ka sehloohong:
1. Khanyetso ea ho chesoa ha oxidation mochesong o phahameng:
Khanyetso ea oxidation e ntse e le ntle haholo ha mocheso o le holimo ho fihla ho 1600 C.
2. Bohloeki bo phahameng: bo entsoe ka ho kenngoa ha mouoane ka lik'hemik'hale tlas'a boemo ba chlorination bo phahameng ba mocheso.
3. Khanyetso ea khoholeho ea mobu: ho thatafala ho hoholo, bokaholimo bo kopaneng, likaroloana tse tšesaane.
4. Ho hanyetsa mafome: asiti, alkali, letsoai le li-reagent tsa tlhaho.
Litlhaloso tse ka Sehloohong tsa Liaparo tsa CVD-SIC:
| SiC-CVD | ||
| Botenya | (g/cc)
| 3.21 |
| Matla a ho tenyetseha | (Mpa)
| 470 |
| Katoloso ea mocheso | (10-6/K) | 4
|
| Ho khanna ha mocheso | (Boemo ba leholimo/mK) | 300
|
