Ukufakwa komoya wamakhemikhali ensimbi-organic (i-MOCVD) kuyindlela evame ukusetshenziswa ye-semiconductor epitaxy esetshenziselwa ukufaka amafilimu amaningi phezu kwama-wafer e-semiconductor ukulungiselela izinto ze-semiconductor ezisezingeni eliphezulu. Izingxenye ze-MOCVD epitaxial zidlala indima ebalulekile embonini ye-semiconductor futhi zisetshenziswa kabanzi kumadivayisi e-optoelectronic, ukuxhumana kwe-optical, ukukhiqizwa kwamandla e-photovoltaic kanye nama-laser e-semiconductor.
Enye yezindlela eziyinhloko zokusebenzisa izingxenye ze-MOCVD epitaxial ukulungiselela amadivayisi e-optoelectronic. Ngokufaka amafilimu amaningi ezinto ezahlukene kuma-semiconductor wafers, kungalungiswa amadivayisi anjenge-optical diodes (LED), i-laser diodes (LD) kanye nama-photodetector. Izingxenye ze-MOCVD epitaxial zinokufana okuhle kakhulu kwezinto kanye namakhono okulawula ikhwalithi yesixhumi, okungafeza ukuguqulwa kwe-photoelectric okuphumelelayo, kuthuthukise ukusebenza kahle okukhanyayo kanye nokuzinza kokusebenza kwedivayisi.
Ngaphezu kwalokho, izingxenye ze-epitaxial ze-MOCVD nazo zisetshenziswa kabanzi emkhakheni wokuxhumana kwe-optical. Ngokufaka izendlalelo ze-epitaxial zezinto ezahlukene, kungalungiswa ama-amplifier optical e-semiconductor asheshayo futhi asebenzayo kanye nama-modulators optical. Ukusetshenziswa kwezingxenye ze-epitaxial ze-MOCVD emkhakheni wokuxhumana kwe-optical kungasiza futhi ekuthuthukiseni izinga lokudlulisela kanye namandla okuxhumana kwe-optical fiber ukuze kuhlangatshezwane nesidingo esikhulayo sokudluliselwa kwedatha.
Ngaphezu kwalokho, izingxenye ze-epitaxial ze-MOCVD nazo zisetshenziswa emkhakheni wokukhiqizwa kwamandla e-photovoltaic. Ngokufaka amafilimu amaningi anezakhiwo ezithile zebhendi, kungalungiswa amaseli elanga asebenzayo. Izingxenye ze-epitaxial ze-MOCVD zinganikeza izendlalelo ze-epitaxial ezihambisana ne-lattice ephezulu, ezisiza ekuthuthukiseni ukusebenza kahle kokuguqulwa kwe-photoelectric kanye nokuzinza kwesikhathi eside kwamaseli elanga.
Okokugcina, izingxenye ze-MOCVD epitaxial nazo zidlala indima ebalulekile ekulungiseleleni ama-laser e-semiconductor. Ngokulawula ukwakheka kwezinto kanye nobukhulu besendlalelo se-epitaxial, kungenziwa ama-laser e-semiconductor anama-wavelength ahlukene. Izingxenye ze-MOCVD epitaxial zinikeza izendlalelo ze-epitaxial ezisezingeni eliphezulu ukuqinisekisa ukusebenza kahle kokukhanya kanye nokulahlekelwa okuphansi kwangaphakathi.
Ngamafuphi, izingxenye ze-epitaxial ze-MOCVD zinezinhlelo zokusebenza eziningi embonini ye-semiconductor. Ziyakwazi ukulungiselela amafilimu e-multilayer asezingeni eliphezulu ahlinzeka ngezinto ezibalulekile zamadivayisi e-optoelectronic, ukuxhumana kwe-optical, ukukhiqizwa kwamandla e-photovoltaic kanye nama-laser e-semiconductor. Ngokuthuthuka okuqhubekayo kanye nokuthuthukiswa kobuchwepheshe be-MOCVD, inqubo yokulungiselela izingxenye ze-epitaxial izoqhubeka nokuthuthukiswa, ilethe ukusungula izinto ezintsha kanye nempumelelo eyengeziwe ezinhlelweni zokusebenza ze-semiconductor.
Isikhathi sokuthunyelwe: Disemba 18-2023