Njengoba ukukhiqizwa kwe-semiconductor kuthuthuka kuye kumajiyometri amancane amadivayisi, ukukhishwa okuphezulu kwe-wafer, kanye nezindinganiso zokulawula ukungcola eziqinile, imishini yokucubungula ukushisa ibhekene nezinselele zobunjiniyela ezingakaze zibonwe ngaphambili. Izinqubo ezifana ne-LPCVD, i-thermal oxidation, i-dopant diffusion, kanye ne-high-temperature annealing manje azidingi nje kuphela ukufana kwezinga lokushisa okuqinile, kodwa futhi nesikhathi eside sokusebenza kwemishini, ukukhiqizwa kwezinhlayiya eziphansi, kanye nokuphindaphinda kwenqubo okuthuthukisiwe.
Nakuba ivame ukunganakwa uma iqhathaniswa namagesi enqubo, amashubhu esithando, noma amakhemikhali okufaka, i-cantilever paddle inquma ngokuyisisekelo ukuthi ama-wafer aziphatha kanjani ezindaweni ezishisa kakhulu. Ezindaweni eziningi ezithuthukisiwe, ayisabhekwa njengento elula esetshenziswayo, kodwa kunalokho iyinto eyisihluthulelo evumela ukucutshungulwa kwe-semiconductor okuzinzile nokuphindaphindekayo.
Iyini i-SiC Cantilever Paddle?
I-SiC Cantilever Paddle iyisakhi se-silicon carbide esihlanzekile kakhulu esisetshenziswa kakhulu kuma-semiconductor diffusion furniture kanye nezinhlelo ze-LPCVD. Ngokuvamile yakhelwe njengesakhiwo eside se-cantilever beam esikwazi ukusekela izikebhe ze-quartz noma ze-SiC wafer ngesikhathi sokucubungula izinga lokushisa eliphezulu.
Ingxenye ngokuvamile ikhiqizwa kusetshenziswa:
● i-silicon carbide ephinde yasetshenziswa (RSiC)
● i-silicon carbide efakwe ngomusi wamakhemikhali (i-CVD SiC)
● izinto ze-SiC ezihlanganiswe nokusabela okuphezulu
Ngokusho kwedatha yezinto ezishicilelwe yiCoorsTek kanye neSaint-Gobain Performance Ceramics, izinto ze-SiC ezihlanzekile kakhulu zivame ukukhombisa:
● Ukushisa: cishe 120–200 W/m·K ekushiseni kwegumbi
● Izinga lokushisa eliphezulu lokusebenza emoyeni ongasebenzi: ngaphezu kuka-1600°C.
● I-Coefficient yokwandisa ukushisa (CTE): cishe 4.0–4.5×10⁻⁶/K.
● Ukumelana okuhle kakhulu ne-HCl, i-NH₃, i-O₂, kanye ne-chemical yenqubo ye-chlorine.
Indima Yesigwedlo Se-SiC Cantilever Ekucutshungulweni Kwe-LPCVD
Phakathi kwazo zonke izinhlelo zokusebenza, izinhlelo ze-LPCVD zimelela esinye sezimo ezibaluleke kakhulu zokusetshenziswa kwama-SiC Cantilever Paddles.
Izinqubo ezifana nalezi:
● ukufakwa kwe-polysilicon.
● i-silicon nitride (Si₃N₄).
● ukufakwa kwe-oxide enomfutho ophansi.
Ngokuvamile isebenza phakathi kuka-500°C no-900°C, ngokuvamile ngaphansi kwemijikelezo yenqubo ende kanye nezimo zamakhemikhali ezisabela kakhulu.
Ngaphakathi kwalezi zinhlelo, i-cantilever paddle yenza imisebenzi eminingana ebalulekile ngesikhathi esisodwa.
Okokuqala, inikeza ukuthuthwa okuzinzile kwemishini yezikebhe ze-wafer ezingena futhi ziphuma epayipini lesithando. Ngenxa yokuthi izitofu zanamuhla eziqondile zingathwala amakhulu ama-wafer ngebhetshi ngayinye, ngisho nokuguquguquka okuncane kwe-paddle kungaholela ekungalingani kahle kwe-wafer, izikhala ezingazinzile, noma ukuqongelela ukucindezeleka kwemishini.
Okwesibili, i-paddle idlala indima ebalulekile ekufaneni kokushisa. Ukushisa okuphezulu kwe-SiC kuvumela ukushisa ukuthi kusabalale ngokulinganayo kakhulu ngesakhiwo sokusekela, kunciphisa ama-gradients okushisa asendaweni angathinta ukufana kokubekwa.
Okwesithathu, ukukhiqizwa kwezinhlayiya eziphansi kubalulekile. Izinhlayiya ze-semiconductor ziyizibulali eziqondile, ikakhulukazi ekukhiqizweni kwe-logic okuthuthukisiwe kanye namandla e-semiconductor. Ngenxa yesakhiwo sayo esiqinile se-ceramic kanye nokumelana nokugqwala okunamandla, i-SiC ehlanzekile kakhulu inciphisa kakhulu ingozi yokuchitheka kwezinhlayiya uma kuqhathaniswa nezinto zendabuko.
Emigqeni yokukhiqiza ye-LPCVD ethuthukisiwe, ukuzinza kobukhulu besikhathi eside kwe-paddle kuthinta ngqo:
● ukuqina kwefilimu.
● ukuphindaphindwa kwe-wafer kuya ku-wafer.
● isikhathi sokusebenza kwesithando somlilo.
I-Ningbo VET Energy igxile ku-graphite ethuthukisiwe, i-silicon carbide ceramics, kanye nezingxenye ze-semiconductor ezimbozwe yi-CVD ezenzelwe izindawo zokukhiqiza ze-semiconductor ezidinga kakhulu.
Imikhiqizo ye-Core semiconductor ifaka:
● Isikejana se-SiC Cantilever
● I-SiC Coated Graphite Susceptor
● Isithwali Se-Wafer Esimbozwe Nge-SiC
● Izingxenye ze-SiC ezimbozwe nge-Halfmoon
● Izinto Zokubumba Ezihlanganisiwe Zekhabhoni Nekhabhoni
● I-Soft Graphite Felt kanye ne-Rigid Graphite Felt
Le mikhiqizo isetshenziswa kabanzi ku:
● Izinhlelo ze-Epitaxy
● Ama-reactor e-LPCVD
● Izitofu zokusabalalisa
● Izinhlelo zokukhula kwekristalu ye-SiC
● Imishini yokucubungula ukushisa eshisa kakhulu.
Ngokukhula okusheshayo kwe-SiC kanye nokukhiqizwa kwe-semiconductor yamandla athuthukisiwe, isidingo sezingxenye zesithando somlilo ezihlanzekile kakhulu nezizinzile sizoqhubeka nokukhula. Kulesi simo, ubuchwepheshe be-SiC Cantilever Paddle buzohlala bungenye yezinto eziyisisekelo ezisekela ukucutshungulwa kwe-semiconductor yesizukulwane esilandelayo.
Isikhathi sokuthunyelwe: Meyi-14-2026
