Isikebhe sekristalu se-silicon carbide: isikhali esisha semboni ye-semiconductor

Ngokuthuthuka okuqhubekayo kwesayensi nobuchwepheshe, imboni ye-semiconductor inesidingo esikhulayo sezinto zokusebenza ezisebenza kahle kakhulu. Kulo mkhakha,isikebhe sekristalu se-silicon carbidesekuyinto ebalulekile ekunakweni ngenxa yezici zayo ezihlukile kanye nezinkambu zokusetshenziswa ezibanzi. Leli phepha lizokwethula izinzuzo kanye nokusetshenziswa kwezikebhe zekristalu ze-silicon carbide embonini ye-semiconductor, futhi libonise indima yalo ebalulekile ekukhuthazeni ukuthuthukiswa kobuchwepheshe be-semiconductor.

Izinzuzo:

1.1 Izici zokushisa okuphezulu:

Isikebhe sekristalu se-silicon carbideinokuqina okuhle kakhulu kokushisa okuphezulu kanye nokuqhuba ukushisa, ingasebenza endaweni enokushisa okuphezulu, futhi ingamelana nokushisa kokusebenza okungaphezu kokushisa kwegumbi. Lokhu kunikeza izikebhe ze-SIC inzuzo eyingqayizivele ekusebenziseni amandla aphezulu kanye nokushisa okuphezulu, njenge-elekthronikhi kagesi, izimoto zikagesi kanye nezindiza.

1.2 Ukuhamba okuphezulu kwama-electron:

Ukuhamba kwama-electron kwezikebhe zekristalu ze-silicon carbide kuphakeme kakhulu kunokwezinto ze-silicon zendabuko, okusho ukuthi kungafinyelela ukuminyana kwamanje okuphezulu kanye nokusetshenziswa kwamandla okuphansi. Lokhu kwenza isikebhe sekristalu se-silicon carbide sibe nethuba elibanzi lokusetshenziswa emkhakheni wemishini kagesi enamandla kakhulu, imvamisa ephezulu kanye nokuxhumana ngemvamisa yomsakazo.

1.3 Ukumelana nemisebe ephezulu:

Isikebhe sekristalu se-silicon carbide simelana kakhulu nemisebe futhi singasebenza ngokuzinzile endaweni enemisebe isikhathi eside. Lokhu kwenza izikebhe ze-SIC zibe usizo emikhakheni yenuzi, yezindiza kanye neyokuvikela, lapho zinikeza khona izixazululo ezithembeke kakhulu nezihlala isikhathi eside.

1.4 Izici zokushintsha okusheshayo:

Ngenxa yokuthi isikebhe sekristalu se-silicon carbide sinokuhamba okuphezulu kwama-electron kanye nokumelana okuphansi, singafinyelela isivinini sokushintsha okusheshayo kanye nokulahlekelwa okuphansi kokushintsha. Lokhu kwenza isikebhe se-silicon carbide sibe yinzuzo enkulu kuma-converter kagesi anamandla, izinhlelo zokudlulisa amandla kanye nokushayela, okungathuthukisa ukusebenza kahle kwamandla futhi kunciphise ukulahleka kwamandla.

Izicelo:

2.1 Amadivayisi kagesi anamandla amakhulu:

izikebhe zekristalu ze-silicon carbidezinezinhlobo eziningi zamathemba okusetshenziswa kwezicelo ezinamandla aphezulu, njengeziguquli zezimoto zikagesi, izinhlelo zokuphehla ugesi welanga, abashayeli bezimoto zezimboni, njll. Ukuqina kwazo kokushisa okuphezulu kanye nokuhamba kwama-electron aphezulu kuvumela la madivayisi ukuthi afinyelele ukusebenza kahle okukhulu kanye nomthamo omncane.

I-amplifier yamandla e-RF engu-2.2:

Ukuhamba okuphezulu kwama-electron kanye nezici zokulahlekelwa okuphansi kwezikebhe zekristalu ze-silicon carbide kuzenza zibe izinto ezifanele kakhulu zama-amplifiers kagesi e-RF. Ama-amplifiers kagesi ezinhlelweni zokuxhumana ze-RF, ama-radar kanye nemishini yomsakazo angathuthukisa ubuningi bamandla kanye nokusebenza kwesistimu ngokusebenzisa izikebhe zekristalu ze-silicon carbide.

2.3 Amadivayisi e-Optoelectronic:

Izikebhe zekristalu ze-silicon carbide nazo zisetshenziswa kabanzi emkhakheni wamadivayisi e-optoelectronic. Ngenxa yokumelana kwayo nemisebe ephezulu kanye nokuqina kokushisa okuphezulu, izikebhe zekristalu ze-silicon carbide zingasetshenziswa kuma-laser diode, kuma-photodetector kanye nokuxhumana kwe-fiber optic, okuhlinzeka ngezixazululo ezithembeke kakhulu nezisebenzayo.

 

2.4 Amadivayisi kagesi anezinga lokushisa eliphezulu:

Ukuqina kokushisa okuphezulu kwesikebhe sekristalu se-silicon carbide kwenza sisetshenziswe kabanzi kumadivayisi kagesi endaweni eshisa kakhulu. Isibonelo, ukuqapha i-nuclear reactor emkhakheni wamandla enuzi, izinzwa zokushisa okuphezulu kanye nezinhlelo zokulawula injini emkhakheni wezindiza.

 

Ngokufigqiwe:

Njengezinto ezintsha ze-semiconductor, isikebhe sekristalu se-silicon carbide sibonise izinzuzo eziningi kanye nezinkambu zokusetshenziswa ezibanzi embonini ye-semiconductor. Izakhiwo zaso zokushisa okuphezulu, ukuhamba kwama-electron aphezulu, ukumelana nemisebe ephezulu kanye nezici zokushintsha okusheshayo kwenza kube kuhle kakhulu ekusetshenzisweni kwamandla aphezulu, imvamisa ephezulu kanye nokushisa okuphezulu. Kusukela kumadivayisi kagesi anamandla aphezulu kuya kuma-amplifiers kagesi e-RF, kusukela kumadivayisi e-optoelectronic kuya kumadivayisi kagesi ashisa kakhulu, ububanzi bokusetshenziswa kwemikhumbi yekristalu ye-silicon carbide buhlanganisa izinkambu eziningi, futhi bufake amandla amasha ekuthuthukisweni kobuchwepheshe be-semiconductor. Ngokuqhubeka okuqhubekayo kobuchwepheshe kanye nocwaningo olujulile, amathuba okusetshenziswa kwezikebhe zekristalu ze-silicon carbide embonini ye-semiconductor azokwandiswa kakhulu, adale imishini ye-elekthronikhi esebenza kahle, ethembekile futhi ethuthukisiwe kithi.