Isikebhe/iSiC Wafer Boat/Tower

Isithombe Esifakiwe Sesikebhe/Inqaba Yesikebhe Se-SiC

Incazelo emfushane:

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

UmkhiqizoDincazelo

Isikebhe se-Wafer se-Silicon carbide sisetshenziswa kabanzi njengesibambi se-wafer enkambisweni yokusabalalisa izinga lokushisa eliphezulu.

Izinzuzo:

Ukumelana nokushisa okuphezulu:ukusetshenziswa okuvamile ku-1800 ℃

Ukushisa okuphezulu:okulingana nezinto ze-graphite

Ubulukhuni obuphezulu:ubulukhuni bulandela idayimane kuphela, i-boron nitride

Ukumelana nokugqwala:i-asidi enamandla ne-alkali azinawo ugqwala kuyo, ukumelana nokugqwala kungcono kune-tungsten carbide ne-alumina

Isisindo esincane:ukuminyana okuphansi, eduze ne-aluminium

Akukho ukuguqulwa: i-coefficient ephansi yokwanda kokushisa

Ukumelana nokushaqeka kokushisa:ingamelana nokushintsha kwezinga lokushisa okukhulu, imelane nokushaqeka kokushisa, futhi inamandla okusebenza kahle

Izakhiwo Ezibonakalayo Ze-SiC

Impahla	Inani	Indlela
Ubuningi	3.21 g/cc	Ukuntanta kwesinki kanye nobukhulu
Ukushisa okukhethekile	0.66 J/g °K	I-flash ye-laser evuvukile
Amandla okugobeka	450 MPa560 MPa	Ukugoba okunezikhombo ezi-4, ukugoba okunezikhombo ezi-RT4, 1300°
Ukuqina kokuphuka	2.94 MPa m1/2	Ukugoba okuncane
Ubulukhuni	2800	I-Vicker's, umthwalo ongu-500g
I-Modulus Elastic I-Modulus kaYoung	450 GPa430 GPa	Ukugoba okungu-4 pt, ukugoba okungu-4 pt, 1300 °C
Usayizi wezinhlamvu	2 – 10 µm	I-SEM

Izakhiwo Zokushisa Ze-SiC

Ukuqhuba Okushisayo	250 W/m °K	Indlela ye-laser flash, RT
Ukwanda Kokushisa (i-CTE)	4.5 x 10-6 °K	Izinga lokushisa legumbi lifinyelela ku-950 °C, i-silica dilatometer