In the back-end process stage, the wafer (silicon wafer with circuits on the front) needs to be thinned on the back before subsequent dicing, welding and packaging to reduce the package mounting he...
Different from S1C discrete devices which pursue high voltage, high power, high frequency and high temperature characteristics, the research goal of SiC integrated circuit is mainly to obtain high ...
1. Acknowledgement before cleaning
1) When the PECVD graphite boat/carrier is used more than 100 to 150 times, the operator needs to check the coating condition in time. If there is an abnormal coa...
Reaction-sintered silicon carbide is an important high-temperature material, with high strength, high hardness, high wear resistance, high corrosion resistance and high oxidation resistance and oth...
After 9 years of entrepreneurship, Innoscience has raised more than 6 billion yuan in total financing, and its valuation has reached an astonishing 23.5 billion yuan. The list of investors is as lo...