Different from S1C discrete devices which pursue high voltage, high power, high frequency and high temperature characteristics, the research goal of SiC integrated circuit is mainly to obtain high ...
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According to a statement from the European Commission, the first enabling Act defines the necessary conditions for hydrogen, hydrogen-based fuels or other energy carriers to be classified as renewa...
In the silicon carbide single crystal growth process, physical vapor transport is the current mainstream industrialization method. For the PVT growth method, silicon carbide powder has a great infl...
The report contains a thorough summary of Graphite Electrode Rod Market that includes several well-known organizations, key market players who are leading in terms of sales, variable market change,...
1. Third-generation semiconductors
The first-generation semiconductor technology was developed based on semiconductor materials such as Si and Ge. It is the material basis for the development of tr...