After 9 years of entrepreneurship, Innoscience has raised more than 6 billion yuan in total financing, and its valuation has reached an astonishing 23.5 billion yuan. The list of investors is as lo...
In the silicon carbide single crystal growth process, physical vapor transport is the current mainstream industrialization method. For the PVT growth method, silicon carbide powder has a great infl...
Italian, Austrian and German companies have unveiled plans to combine their hydrogen pipeline projects to create a 3,300km hydrogen preparation pipeline, which they say could deliver 40% of Eu...
Different from S1C discrete devices which pursue high voltage, high power, high frequency and high temperature characteristics, the research goal of SiC integrated circuit is mainly to obtain high ...
chemical vapor deposition ( CVD ) is a procedure that involve lodge a solid movie on a silicon wafer’s surface through a chemical chemical reaction of a gas mixture. This procedure can be div...
1. SiC crystal growth technology route
PVT (sublimation method),
HTCVD (high temperature CVD),
LPE (liquid phase method)
are three common SiC crystal growth methods;
The most recognized meth...