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What are the defects of silicon carbide epitaxial layer

The core technology for the growth of SiC epitaxial materials is firstly defect control technology, especially for defect control technology that is prone to device failure or reliability degradati...
Do you actually know the electric water pump?

First knowledge of electric water pump The water pump is an important part of the automobile engine system. In the cylinder body of the automobile engine, there are several water channels fo...
Basic technology of plasma enhanced chemical vapor deposition (PECVD)

1. Main processes of plasma enhanced chemical vapor deposition Plasma enhanced chemical vapor deposition (PECVD) is a new technology for the growth of thin films by chemical reaction of gase...
Hydrogen fuel cell stack

A fuel cell stack will not operate stand-alone, but needs to be integrated into a fuel cell system. In the fuel cell system different auxiliary components such as compressors, pumps, sensors, valve...
Graphitization overview

Generally, the busbar between the output end of the DC graphitization furnace rectifier cabinet and the conductive electrode of the furnace head is called a short net, and the busbar used in the gr...
The Principle of PVT Method Silicon Carbide (SiC) Crystal Growth

The PVT method, whose full name is Physical Vapor Transportation, is a common method for growing silicon carbide (SiC)crystals under high temperature and high pressure. Its basic principle is to he...

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