Three main types of silicon carbide polymorph
There are about 250 crystalline forms of silicon carbide. Because silicon carbide has a series of homogeneous polytypes with similar crystal structure...
Triangular defect
Triangular defects are the most fatal morphological defects in SiC epitaxial layers. A large number of literature reports have shown that the formation of triangular defects is...
Sputtering targets are mainly used in the electronics and information industries, such as integrated circuits, information storage, liquid crystal displays, laser memories, electronic control devic...
Fountain Fuel last week opened the Netherlands’ first “zero-emission energy station” in Amersfoort, offering both hydrogen and electric vehicles a hydrogenation/charging service. ...
The PVT method, whose full name is Physical Vapor Transportation, is a common method for growing silicon carbide (SiC)crystals under high temperature and high pressure. Its basic principle is to he...