Graphite PECVD Boat - Factory, Suppliers, Manufacturers from China

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Graphitization overview

Generally, the busbar between the output end of the DC graphitization furnace rectifier cabinet and the conductive electrode of the furnace head is called a short net, and the busbar used in the gr...
What are the reactions of the industry to the green hydrogen standard announced by the EU？

The EU’s newly published enabling law, which defines green hydrogen, has been welcomed by the hydrogen industry as bringing certainty to the investment decisions and business models of EU co...
Three major techniques for SiC crystal growth

As shown in Fig. 3, there are three dominant techniques aiming to provide SiC single crystal with high quality and effciency: liquid phase epitaxy (LPE), physical vapor transport (PVT), and high-te...
Effects of SiC substrate and epitaxial materials on MOSFET device characteristics

Triangular defect Triangular defects are the most fatal morphological defects in SiC epitaxial layers. A large number of literature reports have shown that the formation of triangular defects is...
What is carbon felt

Taking polyacrylonitrile based carbon felt as an example, the area weight is 500g/m2 and 1000g/m2, the longitudinal and transverse strength (N/mm2) are 0.12, 0.16, 0.10, 0.12, the breaking elongati...
New method gives robust transistors: Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors -- ScienceDaily

A new method to fit together layers of semiconductors as thin as a few nanometres has resulted in not only a scientific discovery but also a new type of transistor for high-power electronic devices...

2022.09.10 19:35:03
2022.02.23 18:01:10
2021.09.26 14:35:16
2020.08.30 01:36:05
2020.04.17 18:37:11
2019.06.08 11:23:29

Graphite PECVD Boat - Factory, Suppliers, Manufacturers from China

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Solar Graphite Boat for Pecvd

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Graphitization overview

What are the reactions of the industry to the green hydrogen standard announced by the EU？

Three major techniques for SiC crystal growth

Effects of SiC substrate and epitaxial materials on MOSFET device characteristics

What is carbon felt

New method gives robust transistors: Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors -- ScienceDaily

2022.09.10 19:35:03

2022.02.23 18:01:10

2021.09.26 14:35:16

2020.08.30 01:36:05

2020.04.17 18:37:11

2019.06.08 11:23:29

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