CVDShafi na SiCyana sake fasalin iyakokin ayyukan kera semiconductor a cikin sauri mai ban mamaki. Wannan fasahar rufewa mai sauƙi ta zama babbar mafita ga manyan ƙalubale guda uku na gurɓatar barbashi, tsatsa mai zafi da kuma zaizayar jini a cikin masana'antar guntu. Manyan masana'antun kayan aikin semiconductor na duniya sun lissafa shi a matsayin fasaha ta yau da kullun don kayan aiki na gaba. To, me ya sa wannan rufewa "sulke mara ganuwa" na kera guntu? Wannan labarin zai yi nazari sosai kan ƙa'idodin fasaha, aikace-aikacen asali da kuma nasarorin da aka samu a baya.
Ⅰ. Ma'anar murfin CVD SiC
Rufin CVD SiC yana nufin wani Layer mai kariya na silicon carbide (SiC) da aka ajiye a kan wani abu ta hanyar tsarin adana tururi na sinadarai (CVD). Silicon carbide wani mahaɗi ne na silicon da carbon, wanda aka san shi da kyakkyawan tauri, yawan watsa zafi, rashin kuzarin sinadarai da juriyar zafin jiki mai yawa. Fasahar CVD na iya samar da Layer SiC mai kauri mai yawa, mai yawa da daidaito, kuma yana iya dacewa da yanayin ƙasa mai rikitarwa. Wannan yana sa rufin CVD SiC ya dace sosai don aikace-aikacen da ba za a iya cika su ta hanyar kayan gargajiya ko wasu hanyoyin rufewa ba.
Ⅱ. Ka'idar tsarin CVD
Tacewar tururin sinadarai (CVD) wata hanya ce ta kera abubuwa masu amfani da yawa don samar da kayayyaki masu inganci da inganci. Babban ƙa'idar CVD ta ƙunshi amsawar abubuwan da suka fara aiki a kan saman wani abu mai zafi don samar da wani abu mai ƙarfi.
Ga taƙaitaccen bayani game da tsarin SiC CVD:
Tsarin ƙa'idar tsarin CVD
1. Gabatarwar mai gabatarwa: Ana shigar da abubuwan da suka fara samar da iskar gas, galibi iskar gas mai ɗauke da silicon (misali, methyltrichlorosilane – MTS, ko silane – SiH₄) da iskar gas mai ɗauke da carbon (misali, propane – C₃H₈), a cikin ɗakin amsawa.
2. Isarwa da iskar gas: Waɗannan iskar gas masu tasowa suna gudana akan substrate mai zafi.
3. Shafawa: Kwayoyin precursor suna shawagi a saman substrate mai zafi.
4. Amsar saman: A yanayin zafi mai yawa, ƙwayoyin da ke sha suna fuskantar halayen sinadarai, wanda ke haifar da rugujewar precursor da kuma samar da wani fim ɗin SiC mai ƙarfi. Ana fitar da samfuran da suka lalace a cikin nau'in iskar gas.
5. Shaye-shaye da shaye-shaye: Kayayyakin iskar gas da suka fito daga saman iskar gas suna fitar da hayaki daga ɗakin. Daidaita yanayin zafi, matsin lamba, yawan kwararar iskar gas da kuma yawan abubuwan da ke cikinsa yana da matuƙar muhimmanci don cimma halayen fim ɗin da ake so, gami da kauri, tsarki, lu'ulu'u da mannewa.
Ⅲ. Amfani da Rufin CVD SiC a Tsarin Semiconductor
Rufin CVD SiC yana da matuƙar muhimmanci a masana'antar semiconductor saboda haɗinsu na musamman na kaddarorin kai tsaye ya cika yanayi mai tsauri da buƙatun tsarki na muhallin masana'antu. Suna ƙara juriya ga tsatsa a cikin jini, harin sinadarai, da samar da barbashi, waɗanda duk suna da mahimmanci don haɓaka yawan amfanin wafer da lokacin aiki na kayan aiki.
Ga wasu sassan da aka yi wa fenti na CVD SiC da kuma yanayin aikace-aikacen su:
1. Ɗakin Zane na Plasma da Zoben Hannu
Kayayyaki: Layukan da aka rufe da CVD SiC, kawunan shawa, masu hana ruwa shiga, da zoben mayar da hankali.
Aikace-aikace: A cikin aikin cire ƙwayoyin cuta na plasma, ana amfani da plasma mai aiki sosai don cire kayan da aka zaɓa daga wafers. Abubuwan da ba a rufe su ko waɗanda ba su da ƙarfi ba suna lalacewa da sauri, wanda ke haifar da gurɓataccen ƙwayoyin cuta da kuma yawan lokacin aiki. Rufin CVD SiC yana da kyakkyawan juriya ga sinadarai masu ƙarfi na plasma (misali, fluorine, chlorine, bromine plasmas), yana tsawaita rayuwar abubuwan da ke cikin babban ɗakin, kuma yana rage samar da ƙwayoyin cuta, wanda ke ƙara yawan samar da wafer kai tsaye.
2. Dakunan PECVD da HDPCVD
Kayayyaki: Dakunan amsawa masu rufi da na'urorin lantarki na CVD SiC.
Aikace-aikace: Ana amfani da wurin ajiye tururin sinadarai masu ƙarfafa sinadarin plasma (PECVD) da kuma CVD mai yawan yawa a cikin plasma (HDPCVD) don ajiye siraran fina-finai (misali, yadudduka masu dielectric, yadudduka masu wucewa). Waɗannan hanyoyin kuma sun haɗa da yanayin plasma mai tsauri. Rufin CVD SiC yana kare bangon ɗakin da electrodes daga zaizayar ƙasa, yana tabbatar da ingancin fim ɗin daidai gwargwado da kuma rage lahani.
3. Kayan aikin dasa ion
Kayayyaki: Abubuwan da aka yi wa fenti mai rufi da CVD SiC (misali, ramuka, kofunan Faraday).
Aikace-aikace: Dasa ion yana shigar da ions masu shiga cikin substrates na semiconductor. Hasken ion mai ƙarfi sosai na iya haifar da fashewa da yashewar abubuwan da aka fallasa. Tauri da tsarkin CVD SiC yana rage samar da barbashi daga abubuwan da ke cikin beamline, yana hana gurɓatar wafers yayin wannan matakin doping mai mahimmanci.
4. Abubuwan da ke cikin na'urar Epitaxial reactor
Kayayyaki: Masu hana kamuwa da cuta da masu rarraba iskar gas masu rufi da CVD SiC.
Aikace-aikace: Girman Epitaxial (EPI) ya ƙunshi haɓaka yadudduka masu tsari sosai a kan wani abu a yanayin zafi mai yawa. Susceptors masu rufi na CVD SiC suna ba da kyakkyawan kwanciyar hankali na zafi da rashin daidaiton sinadarai a yanayin zafi mai yawa, suna tabbatar da dumama iri ɗaya da hana gurɓatar susceptor ɗin kanta, wanda ke da mahimmanci don cimma ingantattun yadudduka na epitaxial.
Yayin da yanayin guntu ke raguwa kuma buƙatun tsari ke ƙaruwa, buƙatar masu samar da kayan shafa CVD SiC masu inganci da masana'antun shafa CVD suna ci gaba da ƙaruwa.
IV. Waɗanne ƙalubale ne ke tattare da tsarin rufe CVD SiC?
Duk da fa'idodin da ke tattare da murfin CVD SiC, masana'anta da aikace-aikacensa har yanzu suna fuskantar wasu ƙalubalen tsari. Magance waɗannan ƙalubalen shine mabuɗin cimma daidaiton aiki da inganci a farashi.
Kalubale:
1. Mannewa ga substrate
SiC na iya zama ƙalubale wajen cimma manne mai ƙarfi da daidaito ga kayan substrate daban-daban (misali, graphite, silicon, yumbu) saboda bambance-bambance a cikin ma'aunin faɗaɗa zafi da kuzarin saman. Rashin mannewa mara kyau na iya haifar da wargajewa yayin zagayowar zafi ko damuwa ta injiniya.
Mafita:
Shirye-shiryen saman: Tsaftacewa da kuma gyaran saman (misali, gogewa, maganin plasma) na substrate don cire gurɓatattun abubuwa da kuma ƙirƙirar saman da ya dace don haɗawa.
Mai Tsaka-tsaki tsakanin layuka: Sanya wani sirara mai layi ɗaya ko ma'ajiyar bayanai (misali, carbon pyrolytic, TaC - kama da murfin CVD TaC a cikin takamaiman aikace-aikace) don rage rashin daidaituwar faɗaɗa zafi da haɓaka mannewa.
Inganta sigogin ajiya: A hankali a kula da zafin ajiya, matsin lamba, da kuma rabon iskar gas don inganta haɓakar nucleation da haɓakar fina-finan SiC da kuma haɓaka haɗin gwiwa mai ƙarfi tsakanin fuskoki.
2. Damuwa da Tsagewar Fim
A lokacin da aka ajiye ko kuma aka sanyaya a baya, damuwa na iya tasowa a cikin fina-finan SiC, wanda ke haifar da fashewa ko warwatsewa, musamman a kan manyan siffofi ko hadaddun siffofi.
Mafita:
Kula da Zafin Jiki: Daidaita yawan dumama da sanyaya don rage girgiza da damuwa ta zafi.
Shafi na Gradient: Yi amfani da hanyoyin shafa shafi mai layi da yawa ko kuma mai sauƙin gyarawa don canza tsarin kayan aiki ko tsari a hankali don daidaita damuwa.
Gyaran Bayan Cirewar Kaya: A shafa sassan da aka shafa domin kawar da damuwa da ta rage da kuma inganta ingancin fim ɗin.
3. Daidaito da Daidaito akan Jerin Lissafi Masu Hadaka
Ajiye fenti mai kauri da tsari iri ɗaya a kan sassa masu siffofi masu rikitarwa, manyan rabon fuska, ko hanyoyin ciki na iya zama da wahala saboda ƙuntatawa a cikin yaduwar precursor da motsin amsawa.
Mafita:
Inganta Tsarin Reactor: Tsara na'urorin CVD masu ingantaccen yanayin kwararar iskar gas da daidaiton zafin jiki don tabbatar da rarrabawar abubuwan da suka riga suka fara aiki iri ɗaya.
Daidaita Sigar Tsarin Aiki: Daidaita matsin lamba na ajiya, yawan kwararar ruwa, da kuma yawan abubuwan da suka fara aiki don haɓaka yaɗuwar iskar gas zuwa cikin fasaloli masu rikitarwa.
Takardar shaidar matakai da yawa: Yi amfani da matakan ajiyewa akai-akai ko kayan aiki masu juyawa don tabbatar da cewa an rufe dukkan saman sosai.
V. Tambayoyin da ake yawan yi akai-akai
T1: Menene babban bambanci tsakanin CVD SiC da PVD SiC a aikace-aikacen semiconductor?
A: Rufin CVD tsarin lu'ulu'u ne mai ginshiƙai waɗanda tsarkinsu ya kai >99.99%, waɗanda suka dace da yanayin plasma; Rufin PVD galibi ba su da tsari/nanocrystalline tare da tsarkinsu na <99.9%, galibi ana amfani da su don rufin ado.
Q2: Menene matsakaicin zafin da murfin zai iya jurewa?
A: Juriyar 1650°C na ɗan gajeren lokaci (kamar tsarin rage zafi), iyaka ta amfani na dogon lokaci 1450°C, wuce wannan zafin jiki zai haifar da sauyi daga β-SiC zuwa α-SiC.
Q3: Matsakaicin kauri na shafi?
A: Abubuwan da ke cikin Semiconductor galibi suna da girman 80-150μm, kuma rufin EBC na injin jirgin sama na iya kaiwa 300-500μm.
T4: Waɗanne muhimman abubuwan ne ke shafar farashi?
A: Tsarkakakken abin da aka riga aka yi amfani da shi (40%), amfani da makamashin kayan aiki (30%), asarar yawan amfanin ƙasa (20%). Farashin na'urar rufewa mai tsada zai iya kaiwa $5,000/kg.
Q5: Waɗanne manyan masu samar da kayayyaki ne a duniya?
A: Turai da Amurka: CoorsTek, Mersen, Ionbond; Asiya: Semixlab, Veteksemicon, Kallex (Taiwan), Scietech (Taiwan)
Lokacin Saƙo: Yuni-09-2025