Kumukūʻai i ʻōlelo ʻia no Kina High Temperature Resistance Green Silicon Carbide Abrasive Powder Black Silicon Carbide Polishing Powder

ʻO ke kumukūʻai i ʻōlelo ʻia no Kina High Temperature Resistance Green Silicon Carbide Abrasive Powder Black Silicon Carbide Polishing Powder Kiʻi i hōʻike ʻia

Wehewehe Pōkole:

Kahi i hoʻomaka ai:Kina

ʻAno kristal:Pae FCCβ

Ka nui o ka paʻa:3.21 g/cm;

Paʻakikī:2500 Vickers;

Ka nui o ka palaoa:2~10μm;

Maʻemaʻe Kemika:99.99995%;

Ka Mana Wela:640J·kg-1·K-1;

Mahana Hoʻoheheʻe:2700℃;

Ikaika Felexural:415 Mpa (RT 4-Point);

Modulus o Young:430 Gpa (4pt kūlou, 1300 ℃);

Hoʻonui Wela (CTE):4.5 10-6K-1;

Ka hoʻokele wela:300 (W/mK);

E leka uila mai iā mākou Hoʻoiho ma ke ʻano he PDF

Nā kikoʻī huahana

Nā Lepili Huahana

Loaʻa iā mākou kā mākou hui kūʻai aku ponoʻī, hui hoʻolālā, hui loea, hui QC a me ka hui pūʻolo. Loaʻa iā mākou nā kaʻina hana hoʻomalu maikaʻi koʻikoʻi no kēlā me kēia kaʻina hana. Eia kekahi, ua ʻike kā mākou poʻe limahana a pau i ke kahua paʻi no ke kumukūʻai i ʻōlelo ʻia no Kina High Temperature Resistance Green Silicon Carbide Abrasive Powder Black Silicon Carbide Polishing Powder, ʻo ka pōmaikaʻi a me ka ʻoluʻolu o nā mea kūʻai aku kā mākou manaʻo nui loa. E hoʻomanaʻo e hoʻokaʻaʻike mai iā mākou. E hāʻawi mai iā mākou i kahi manawa kūpono, e hāʻawi iā ʻoe i kahi mea kupanaha.
Loaʻa iā mākou kā mākou hui kūʻai aku ponoʻī, hui hoʻolālā, hui loea, hui QC a me ka hui pūʻolo. Loaʻa iā mākou nā kaʻina hana hoʻomalu maikaʻi no kēlā me kēia kaʻina hana. Eia kekahi, ua ʻike kā mākou poʻe limahana a pau i ke kahua paʻi noKina Silicon Carbide, ʻO Sic, He aha ke kumukūʻai maikaʻi? Hāʻawi mākou i nā mea kūʻai aku me ke kumukūʻai hale hana. Ma ke kumu o ka maikaʻi maikaʻi, pono e nānā pono ʻia ka pono a mālama i nā loaʻa kālā haʻahaʻa a olakino kūpono. He aha ka lawe wikiwiki? Hana mākou i ka lawe ʻana e like me nā koi o nā mea kūʻai aku. ʻOiai ʻo ka manawa lawe e pili ana i ka nui o ke kauoha a me ka paʻakikī o ia mea, ke hoʻāʻo nei mākou e hoʻolako i nā huahana a me nā hoʻonā i ka manawa. Manaʻolana nui e loaʻa iā mākou ka pilina ʻoihana lōʻihi.
Wehewehe Huahana

Hāʻawi kā mākou hui i nā lawelawe hana uhi SiC ma o ke ʻano CVD ma luna o ka graphite, keramika a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā e loaʻa ana ke kalapona a me ka silicon ke hana i ka mahana kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe, nā molekala i waiho ʻia ma luna o ka ʻili o nā mea i uhi ʻia, e hana ana i ka papa pale SIC.

Nā hiʻohiʻona nui:

1. Ke kūpaʻa ʻana i ka oxidation wela kiʻekiʻe: maikaʻi loa ke kūpaʻa ʻana i ka oxidation ke kiʻekiʻe ka mahana i 1600 C.

2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka waiho ʻana o ka mahu kemika ma lalo o ke kūlana chlorination wela kiʻekiʻe.

3. Ke kūpaʻa ʻana i ka ʻino: paʻakikī kiʻekiʻe, ʻili paʻa, nā ʻāpana maikaʻi.

4. Ke kūpaʻa ʻana i ka palaho: waikawa, alkali, paʻakai a me nā reagents organik.

Nā Kikoʻī Nui o ka Uhi ʻana o CVD-SIC

Nā Waiwai SiC-CVD
ʻAno Crystal	Pae FCC β
Ka nui o ka paʻa	g/cm³	3.21
Paʻakikī	Paʻakikī Vickers	2500
Ka nui o ka palaoa	μm	2~10
Maʻemaʻe Kemika	%	99.99995
Ka Mana Wela	J·kg-1 ·K-1	640
Mahana Sublimation	℃	2700
Ikaika Felexural	MPa (RT 4-kiko)	415
Modulus o Young	Gpa (4pt kūlou, 1300 ℃)	430
Hoʻonui Wela (CTE)	10-6K-1	4.5
Ka hoʻokele wela	(W/mK)	300