Ixabiso elicatshulweyo le-China High Temperature Resistance Green Silicon Carbide Abrasive Powder Black Silicon Carbide Polishing Powder

Inkcazo emfutshane:


  • Indawo Yokuqala:iTshayina
  • Ulwakhiwo lwekristale:Isigaba se-FCCβ
  • Uxinano:3.21 g/cm;
  • Ubunzima:IiVickers ezingama-2500;
  • Ubungakanani bengqolowa:2 ~ 10μm;
  • Ucoceko lweeKhemikhali:99.99995%;
  • Umthamo wobushushu:640J·kg-1·K-1;
  • Ubushushu bokunyibilikisa:2700℃;
  • Amandla e-Felexural:415 Mpa (RT 4-Point);
  • IModulus kaYoung:430 Gpa (ukugoba kwe-4pt, 1300℃);
  • Ukwandiswa kobushushu (i-CTE):4.5 10-6K-1;
  • Ukuqhuba kobushushu:300 (W/mK);
  • Iinkcukacha zeMveliso

    Iithegi zeMveliso

    Sineqela lethu lokuthengisa, iqela loyilo, iqela lobuchwephesha, iqela le-QC kunye neqela lephakheji. Sineenkqubo ezingqongqo zokulawula umgangatho kwinkqubo nganye. Kwakhona, bonke abasebenzi bethu banamava kwicandelo lokuprinta ngexabiso elicatshulweyo le-China High Temperature Resistance Green Silicon Carbide Abrasive Powder Black Silicon Carbide Polishing Powder, Inzuzo yabathengi kunye nokwaneliseka zihlala ziyinjongo yethu enkulu. Khumbula ukunxibelelana nathi. Sinike ithuba, sikunike isimanga.
    Sineqela lethu lokuthengisa, iqela loyilo, iqela lobuchwephesha, iqela le-QC kunye neqela leephakheji. Sineenkqubo ezingqongqo zokulawula umgangatho kwinkqubo nganye. Kwakhona, bonke abasebenzi bethu banamava kwicandelo lokuprintaI-China Silicon Carbide, I-Sic, Lithini ixabiso elifanelekileyo? Sinika abathengi ngexabiso lasefektri. Ngokwembono yomgangatho olungileyo, ukusebenza kakuhle kufuneka kunikwe ingqalelo kwaye kugcinwe inzuzo efanelekileyo ephantsi nesempilweni. Yintoni ukuhanjiswa okukhawulezayo? Senza ukuhanjiswa ngokweemfuno zabathengi. Nangona ixesha lokuhanjiswa lixhomekeke kubungakanani beodolo kunye nobunzima bayo, sisazama ukubonelela ngeemveliso kunye nezisombululo ngexesha. Sinethemba elinyanisekileyo lokuba singaba nobudlelwane beshishini bexesha elide.
    Ingcaciso yeMveliso

    Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma iSiC ngendlela yeCVD kumphezulu wegrafiti, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulethe ikhabhoni kunye nesilicon zisabele kubushushu obuphezulu ukuze zithole iimolekyuli zeSiC ezicocekileyo kakhulu, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenze umaleko wokukhusela we-SIC.

    Iimpawu eziphambili:

    1. Ukumelana ne-oxidation kubushushu obuphezulu: ukumelana ne-oxidation kusesekuhle kakhulu xa ubushushu bufikelela kwi-1600 C.

    2. Ubunyulu obuphezulu: benziwa yi-chemical vapor deposition phantsi kwemeko ye-chlorination yobushushu obuphezulu.

    3. Ukumelana nokukhukuliseka: ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.

    4. Ukumelana nokugqwala: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.

     

    Iinkcukacha eziphambili zeCVD-SIC Coating

    Iipropati zeSiC-CVD

    Ulwakhiwo lwekristale Isigaba se-β se-FCC
    Uxinano g/cm³ 3.21
    Ukuqina Ubulukhuni bukaVickers 2500
    Ubungakanani bengqolowa μm 2~10
    Ucoceko lweeKhemikhali % 99.99995
    Umthamo wobushushu J·kg-1 ·K-1 640
    Ubushushu bokunyibilikisa 2700
    Amandla eFeleksiyuramu I-MPa (RT-point 4) 415
    IModulus yoLutsha I-Gpa (i-4pt bend, 1300℃) 430
    Ukwandiswa kobushushu (i-CTE) 10-6K-1 4.5
    Ukuqhuba kobushushu (W/mK) 300

    1 2 3 4 5 6 7 8 9

     

     

     

     


  • Ngaphambili:
  • Okulandelayo:

  • Incoko ye-WhatsApp kwi-Intanethi!