Intengo ecashuniwe ye-China High Temperature Resistance Green Silicon Carbide Abrasive Powder Black Silicon Carbide Polishing Powder

Incazelo emfushane:


  • Indawo Yokuqala:IShayina
  • Isakhiwo sekristalu:Isigaba se-FCCβ
  • Ubuningi:3.21 g/cm;
  • Ubulukhuni:AmaVickers angu-2500;
  • Usayizi Wezinhlamvu:2 ~ 10μm;
  • Ukuhlanzeka Kwamakhemikhali:99.99995%;
  • Umthamo Wokushisa:640J·kg-1·K-1;
  • Izinga Lokushisa Lokuncibilikisa:2700℃;
  • Amandla e-Felexural:415 Mpa (RT 4-Point);
  • I-Modulus kaYoung:430 Gpa (ukugoba okungu-4pt, 1300℃);
  • Ukwanda Kokushisa (i-CTE):4.5 10-6K-1;
  • Ukuqhuba kwe-thermal:300 (W/mK);
  • Imininingwane Yomkhiqizo

    Amathegi Omkhiqizo

    Sinethimba lethu lokuthengisa, ithimba lokuklama, ithimba lobuchwepheshe, ithimba le-QC kanye nethimba lephakheji. Sinezinqubo zokulawula ikhwalithi eziqinile zenqubo ngayinye. Futhi, bonke abasebenzi bethu banolwazi emkhakheni wokuphrinta ngentengo ecashuniwe ye-China High Temperature Resistance Green Silicon Carbide Abrasive Powder Black Silicon Carbide Polishing Powder, izinzuzo kanye nokwaneliseka kwamakhasimende ngokuvamile kuyinhloso yethu enkulu. Khumbula ukuxhumana nathi. Sinike amathuba, sikunikeze isimanga.
    Sineqembu lethu lokuthengisa, ithimba lokuklama, ithimba lobuchwepheshe, ithimba le-QC kanye nethimba lephakheji. Sinezinqubo zokulawula ikhwalithi eziqinile zenqubo ngayinye. Futhi, bonke abasebenzi bethu banolwazi emkhakheni wokuphrinta weI-China Silicon Carbide, I-Sic, Iyini intengo enhle? Sinikeza amakhasimende ngentengo yasefektri. Ngokwesisekelo sekhwalithi enhle, ukusebenza kahle kufanele kunakwe futhi kugcinwe inzuzo ephansi nenempilo efanele. Kuyini ukulethwa okusheshayo? Senza ukulethwa ngokwezidingo zamakhasimende. Nakuba isikhathi sokulethwa sincike enanini le-oda kanye nobunzima balo, sisazama ukuhlinzeka ngemikhiqizo nezixazululo ngesikhathi. Ngiyethemba ngobuqotho ukuthi singaba nobudlelwano bebhizinisi besikhathi eside.
    Incazelo Yomkhiqizo

    Inkampani yethu inikeza izinsizakalo zenqubo yokumboza i-SiC ngendlela ye-CVD ebusweni be-graphite, izinto zobumba nezinye izinto, ukuze amagesi akhethekile aqukethe ikhabhoni ne-silicon asabela ekushiseni okuphezulu ukuze athole ama-molecule e-SiC ahlanzekile kakhulu, ama-molecule abekwe ebusweni bezinto ezimboziwe, akha ungqimba oluvikelayo lwe-SIC.

    Izici eziyinhloko:

    1. Ukumelana nokushisa okuphezulu kwe-oxidation: ukumelana nokushisa kwe-oxidation kusese kuhle kakhulu lapho izinga lokushisa liphezulu njengo-1600 C.

    2. Ubumsulwa obuphezulu: okwenziwe ngokufaka umusi wamakhemikhali ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

    3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.

    4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.

     

    Imininingwane Eyinhloko Yokumboza kwe-CVD-SIC

    Izakhiwo ze-SiC-CVD

    Isakhiwo sekristalu Isigaba se-β se-FCC
    Ubuningi g/cm³ 3.21
    Ubulukhuni Ubulukhuni bukaVickers 2500
    Usayizi Wezinhlamvu μm 2~10
    Ukuhlanzeka Kwamakhemikhali % 99.99995
    Amandla Okushisa J·kg-1 ·K-1 640
    Izinga Lokushisa Lokuthuthwa Kwezinto Ezincane 2700
    Amandla e-Felexural I-MPa (RT-amaphuzu angu-4) 415
    I-Young's Modulus I-Gpa (ukugoba okungu-4pt, 1300℃) 430
    Ukwanda Kokushisa (i-CTE) 10-6K-1 4.5
    Ukuqhuba kwe-thermal (W/mK) 300

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