The origin of the name epitaxial wafer
First, let’s popularize a small concept: wafer preparation includes two major links: substrate preparation and epitaxial process. The substrate is a wafer m...
Ningbo VET Energy Technology Co., Ltd. is a high-tech enterprise established in China, focusing on Advanced Material Technology and automotive products. We are professional manufacturer and supplie...
Silicon carbide is a compound of Silicon and Carbon with chemical formula SiC. Today SiC coated graphite is widely used in high-temperature/high-voltage semiconductor electronics.
Currently major p...
The crystal growth furnace is the core equipment for silicon carbide crystal growth. It is similar to the traditional crystalline silicon grade crystal growth furnace. The furnace structure is not ...
First of all, we need to know PECVD (Plasma Enhanced Chemical Vapor Deposition). Plasma is the intensification of the thermal motion of material molecules. The collision between them will cause the...
I. Process parameter exploration
1. TaCl5-C3H6-H2-Ar system
2. Deposition temperature:
According to the thermodynamic formula, it is calculated that when the temperature is greater than 1273K...