Today, China-US Semiconductor Industry Association announced the establishment of “China-US semiconductor industry technology and trade restriction working group”
After several rounds o...
In the back-end process stage, the wafer (silicon wafer with circuits on the front) needs to be thinned on the back before subsequent dicing, welding and packaging to reduce the package mounting he...
Different from S1C discrete devices which pursue high voltage, high power, high frequency and high temperature characteristics, the research goal of SiC integrated circuit is mainly to obtain high ...
Introduction of graphite flexible felt
High temperature graphite felt has the properties of light weight, good disturbance, high carbon content, high temperature resistance, no volatilization at h...
Italian, Austrian and German companies have unveiled plans to combine their hydrogen pipeline projects to create a 3,300km hydrogen preparation pipeline, which they say could deliver 40% of Eu...
Generally, the busbar between the output end of the DC graphitization furnace rectifier cabinet and the conductive electrode of the furnace head is called a short net, and the busbar used in the gr...