MOCVD siv rau dab tsi?

MOCVD feem ntau yog siv rau kev cog cov yeeb yaj kiab semiconductor nyias nyias. Cov yeeb yaj kiab no yog qhov tseem ceeb rau cov khoom siv hluav taws xob thiab optoelectronic siab heev. Kev ua lag luam rau MOCVD thev naus laus zis qhia txog kev loj hlob zoo. Cov kws tshaj lij kwv yees nws tus nqi ua lag luam ntawmUSD 1.1 billion hauv xyoo 2023Lawv kwv yees tias cov nyiaj tau los yuav nce mus txog USD 2.8 billion los ntawm xyoo 2033, qhia txog tus nqi loj hlob txhua xyoo (CAGR) ntawm 9.7%. Qhov kev nthuav dav tseem ceeb no qhia txog MOCVD lub luag haujlwm tseem ceeb hauv kev nce qib thev naus laus zis.

Cov Ntsiab Lus Tseem Ceeb

• MOCVDloj hlob cov zaj duab xis semiconductor nyias nyias. Cov zaj duab xis no tseem ceeb rau ntau yam khoom siv hluav taws xob.
• MOCVD pab tsim cov khoom siv siab heev. Cov no suav nrog LEDs, laser diodes, thiab cov khoom siv hluav taws xob.
• MOCVD zoo rau lub zog rov ua dua tshiab. Nws pab tsim cov hlwb hnub ci thiab cov sensors teeb pom kev zoo dua.
• MOCVD muaj kev tswj hwm zoo heev. Nws tsim cov khaubncaws sab nraud povtseg nrog atomic precision rau kev ua haujlwm zoo dua ntawm cov khoom siv.
• MOCVD tuaj yeem ua ntau yam khoom siv ib zaug. Qhov no ua rau nws zoo rau kev tsim khoom loj.

MOCVD rau Cov Khoom Siv Optoelectronic Siab Tshaj Plaws

Kev Tso Cov Pa Tshuaj Uas Muaj Hlau Thiab Organic (MOCVD)ua lub luag haujlwm tseem ceeb hauv kev tsim cov khoom siv optoelectronic siab heev. Cov thev naus laus zis no ua rau muaj kev loj hlob ntawm cov zaj duab xis semiconductor nyias, uas yog qhov tseem ceeb rau kev ua haujlwm ntawm cov diodes teeb pom kev niaj hnub, laser diodes, thiab infrared emitters.

MOCVD hauv kev tsim khoom LED

Cov txheej txheem tso tawm no yog qhov tseem ceeb rau kev tsim cov teeb pom kev zoo (LEDs). Nws pab txhawb kev loj hlob ntawm cov khoom siv tseem ceeb xws liGallium Nitride (GaN), Gallium Arsenide (GaAs), thiab Indium Phosphide (InP), nrog raucov tshuaj arsenide/phosphide (As/P)Cov ntaub ntawv no yog lub hauv paus rau kev tso tawm lub teeb zoo. Piv txwv li,kev ua tau zoo 407 nm violet InGaN ntau-quantum-wells LEDsraug tsim los ntawm kev siv txoj kev no. Cov khoom siv no feem ntau suav nrog cov txheej txheem kis tam sim no GaN uas tsis muaj doped thiab AlGaN cov teeb meem nrog cov ntsiab lus txhuas siab. Tus qauv tsim no txhim kho kev ua haujlwm ntawm lub teeb los ntawm kev txo qis kev txhaj tshuaj tam sim no.Cov qhov dej InGaN/GaN ntau lub qhov (MQWs)sawv cev rau cov khoom siv sib xyaw ua ke rau kev tsim khoom siv LED siab. Kev loj hlob siv cov txheej txheem no ua rau muaj kev txhim kho zoo duakev sib xws thiab kev pab them nqi ntawm cov yeeb yaj kiab nyias nyias no, uas cuam tshuam ncaj qha rau qhov kev tsim cov khoom siv 2D wafer rau cov khoom siv optoelectronic ua tau zoo. ALiab InGaN LED, emitting ntawm 625 nm, tau txais cov ntaub ntawv sab nraud quantum efficiency (EQE) ntawm 10.5%los ntawm cov txheej txheem epitaxial nyuaj uas muaj cov khaubncaws sab nraud povtseg superlattice thiab kev them nyiaj rau kev ntxhov siab.

MOCVD rau Laser Diodes

Cov laser diodes, cov khoom tseem ceeb hauv kev sib txuas lus optical thiab kev khaws cov ntaub ntawv, vam khom rau cov thev naus laus zis no. Txoj kev no ua rau muaj kev loj hlob ntawm cov yeeb yaj kiab epitaxial zoo siv cov khoom siv xws li Gallium Arsenide (GaAs), Gallium Nitride (GaN), thiab Indium Phosphide (InP). Cov txheej txheem kev loj hlob pab txhawb kev txhim kho ntawmcov laser diodes uas pom tau los ntawm cov hlau III-V xws li InGaPAs thiab InGaAlP. Ntxiv mus,Cov InAs/GaAs quantum dot laser diodes uas tsim los ntawm cov thev naus laus zis no tso tawm lub teeb O-band, tshwj xeeb ntawm 1.3 µmQhov kev ua kom raug ntawm cov txheej txheem tso dej pab txhawb rau qhov kev ntseeg tau thiab lub neej ntev ntawm cov khoom siv no. Piv txwv li, nws tau ua lub luag haujlwm tseem ceeb hauv kev loj hlob cov yeeb yaj kiab epitaxial zoo rau ZnSe-based laser diodes, ua rau muaj kev txhim kho tseem ceeb hauv lawvlub neej ntev, ncav cuag kwv yees li 500 teev ntawm 20 ° C nyob rau hauv kev ua haujlwm nthwv dej tas mus liCov kws tshawb nrhiav kuj siv txoj kev no los cog qoob looCov lasers InGaAs-AlGaAs uas muaj thaj tsam dav dav uas ua haujlwm ntawm kwv yees li 975 nm, uas pab nkag siab txog cov txheej txheem kev puas tsuaj.

MOCVD hauv Infrared Emitters

Txoj kev tso tawm no kuj tseem ceeb heev rau kev tsim cov infrared emitters siab heev, uas nrhiav tau cov ntawv thov hauv kev xav, kev thaij duab, thiab kev sib txuas lus. Cov txheej txheem tso cai rau kev tso tawm cov qauv khoom siv nyuaj. Piv txwv li, cov lasers nruab nrab infrared tau loj hlob siv cov txheej txheem no. Cov khoom siv zoo no suav nrog AlAsSb claddings, cov cheeb tsam InAsSb nquag, thiab ntau theem, hom I InAsSb / InAsP quantum zoo thaj chaw nquag. Lawv kuj tseem muaj cov khaubncaws sab nraud povtseg GaAsSb / InAs semi-hlau, uas ua haujlwm ua cov khoom siv hluav taws xob sab hauv rau ntau theem txhaj tshuaj lasers, thiab AlAsSb ua haujlwm ua txheej txheem kaw hluav taws xob. Cov qauv no sawv cev rauthawj cov khoom siv ntau theem uas tau cog los ntawm txoj kev no, qhia txog lub peev xwm ntawm thev naus laus zis los tsim cov khoom siv infrared tshwj xeeb. Lub peev xwm los tswj kev sib npaug thiab kev npog ntawm cov yeeb yaj kiab synthesized yog qhov tseem ceeb rau kev ua haujlwm ntawm cov khoom siv infrared siab heev no.

MOCVD hauv Cov Khoom Siv Hluav Taws Xob Ua Haujlwm Siab

Kev Tso Cov Pa Tshuaj Uas Muaj Hlau Thiab Organic (MOCVD)yog ib lub thev naus laus zis tseem ceeb rau kev tsim cov khoom siv hluav taws xob ua haujlwm tau zoo. Cov txheej txheem no ua rau muaj kev loj hlob ntawm cov txheej semiconductor tseem ceeb rau cov khoom siv hluav taws xob, cov transistors zaus siab, thiab cov sensors siab heev.

MOCVD rau Cov Khoom Siv Hluav Taws Xob

Cov khoom siv hluav taws xob xav tau cov ntaub ntawv uas muaj peev xwm tswj tau qhov muaj zog ntau thiab qhov kub thiab txias heev. MOCVD yog qhov tseem ceeb rau kev tsim cov ntaub ntawv xws li Gallium Nitride (GaN) thiab Silicon Carbide (SiC), uas muajkev ua kom sov zoo dua thiab muaj zog tawg siabCov khoom no yog qhov tseem ceeb rau cov tshuab fais fab niaj hnub no.Cov semiconductors dav dav xws li SiC thiab GaNzoo rau cov chaw muaj zog heev. Cov khoom siv raug rau qhov hluav taws xob siab, tam sim no, thiab kub hauv cov chaw no. Piv txwv li, GaN diodes, tsim nrog MOCVD-grown drift regions, tau ua pov thawj tias muaj qhov hluav taws xob tawg ntau dua1.3 kVKaum ob lub cuab yeej los ntawm ib lub wafer tau qhia txog qhov peev xwm no, ncav cuag kwv yees li 90 feem pua ​​​​​​ntawm qhov kev txwv theoretical parallel-plane.

MOCVD ua rau muaj kev loj hlob ntawmcov txheej txheem epitaxial zoo, ib leeg-siv lead ua ke ntawm SiC substrates nrog cov qhov tsis zoo tsawg. Qhov no tseem ceeb heev rau cov khoom siv hluav taws xob semiconductor. Cov txheej txheem muab kev tswj hwm meej ntawm qhov tuab, doping concentration, thiab txheej sib xws ntawm cov txheej epitaxial. Cov yam no ua kom zoo dua cov khoom siv hluav taws xob tseem ceeb rau cov khoom siv hluav taws xob nyuaj. Ntxiv mus, MOCVD yog qhov tsim nyog rau kev tsim khoom loj. Nws tso cai rau kev loj hlob ntawm cov txheej epitaxial ntawm ob qho tib si me me thiab loj substrates, ua rau SiC-raws li cov khoom siv tsim nyog rau kev siv dav dav. III-nitride semiconductor cov ntaub ntawv, suav nrogGaN, AlGaN, InGaN, AlN, thiab InAlN, raug loj hlob los ntawm txoj kev no rau kev siv ua haujlwm siab hauv cov khoom siv hluav taws xob, photonics, thiab cov thev naus laus zis huv. Cov ntaub ntawv no yog qhov tseem ceeb rau cov khoom siv xws li cov transistors fais fab ua haujlwm siab (HEMTs), UV-pom LEDs, thiab laser diodes.

MOCVD hauv Cov Transistors Zaus Siab

Cov transistors siab zaus, tseem ceeb rau cov kab ke sib txuas lus siab heev, kuj tau txais txiaj ntsig zoo los ntawm MOCVD. Cov txheej txheem no pab txhawb kev loj hlob ntawm InP-raws li cov khoom siv rau cov khoom siv xws li High Electron Mobility Transistors (HEMTs), Heterojunction Bipolar Transistors (HBTs), PIN, Mixer, thiab Multiplier diodesPiv txwv li, cov kws tshawb fawb tsim AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) ntawm 4-nti GaN ntawm SiC substrates. Lub epitaxial wafer, uas MOCVD loj hlob, muaj ib txheej i-GaN buffer, ib txheej GaN channel 0.9 μm uas tsis tau xav txog, ib txheej 25 nm Al0.25Ga0.75N barrier, thiab ib txheej GaN cap 2 nm. Kev ntsuas Hall ntawm chav tsev kub qhia tau tias muaj kev txav mus los ntawm hluav taws xob ntawm1500 cm²/V·s, daim ntawv tsis kam ntawm 280 Ω/sq, thiab daim ntawv carrier ceev ntawm 1 × 10¹³/cm².

Kev txhim kho cov qauv ohmic etching (OEPs) rau Ka-band daim ntawv thov ntxiv txhim kho kev ua tau zoo. Ib txoj kab 1 μm OEP tau qhia txog cov txiaj ntsig zoo dua piv rau lwm cov qauv.

Qhov kev tsim kho OEP zoo no, ua ke nrog cov txheej epitaxial uas MOCVD loj hlob, ua rau muaj kev ua haujlwm zoo dua ntawm xov tooj cua. Nws ua tiav qhov no los ntawm kev txo qhov kev tiv thaiv kev nkag mus thiab nce thaj chaw sib cuag.

MOCVD rau Cov Sensors Siab Tshaj Plaws

Cov sensors siab heev vam khom cov txheej semiconductor uas tau tsim tshwj xeeb rau kev txhim kho kev rhiab heev thiab kev xaiv. MOCVD kev loj hlob ntawm2D hloov hlau dichalcogenides (TMDs) zoo li molybdenum disulfide (MoS2)yog qhov tseem ceeb rau cov khoom siv nano-electronic tiam tom ntej. Cov ntawv thov no feem ntau suav nrog cov thev naus laus zis siab heev, tau txais txiaj ntsig los ntawm kev loj hlob ntawm cov txheej txheem thiab cov crystallinity siab uas muab los ntawm txoj kev.

Cov txheej ZnGa2O4 uas loj hlob hauv MOCVD muaj txiaj ntsig zoo rau cov pa roj NO. Kev tshawb fawb tau qhia tias kev kho qhov chaw ntawm cov ntshav ua rau lawv cov kev ua tau zoo dua qub. Qhov no ua rau muaj kev txhim kho 8 npaug ntawm cov lus teb ntawm cov pa roj NO rau 5 ppm, ncav cuag1276.1%Lub sensor zoo no kuj tau ua tiav qhov txwv qis ntawm kev kuaj pom ntawm 2.4 ppb, qhia txog qhov ua tau zoo ntawm cov txheej txheem hauv kev tsim cov sensors roj NO ua haujlwm siab.

Tsis tas li ntawd xwb,indium oxide nanowires thiab In2O3 zaj duab xis nyiascov txheej txheem no ua rau pom kev xaiv zoo rau NO2. Cov ntaub ntawv no qhia txog kev cuam tshuam tsawg kawg los ntawm lwm cov pa roj, qhia txog kev xaiv zoo dua. Ib txheej ZnGa2O4 (ZGO) uas MOCVD loj hlob tau pom muaj kev rhiab heev, kev thim rov qab, thiab kev xaiv rau kev ntes NO ntawm 300 ° C. Lub ZGO sensor tau qhia txog kev rhiab heev ntawm1.88thaum raug rau 125 ppb NO. Nws tau qhia tias muaj kev rhiab heev rau NO thaum tsis tshua muaj kev cuam tshuam nrog CO2, CO, thiab SO2, qhia txog kev xaiv zoo dua. Lub ZGO sensor kuj tau qhia txog kev teb zoo dua rau NO piv rau NO2. Kev sim ua ntej tau lees paub tias lub ZGO roj sensor qhov kev teb zoo rau NO yog vim muaj kev hloov pauv tseem ceeb hauv kev ua haujlwm thaum NO molecule adsorption ntawm qhov chaw nyias nyias.

MOCVD rau Lub Zog Rov Ua Dua Tshiab thiab Kev Tshawb Pom

Kev Tso Cov Pa Tshuaj Uas Muaj Hlau-Organic (MOCVD) pab txhawb rau kev nce qib hauv cov thev naus laus zis hluav taws xob rov ua dua tshiab thiab cov txheej txheem kuaj pom zoo heev. Cov txheej txheem no ua rau muaj peev xwm tsim cov khoom siv ua haujlwm siab uas tseem ceeb rau cov hlwb hnub ci zoo thiab cov photodetectors rhiab heev.

MOCVD nyob rau hauv Multi-Junction Solar Cells

MOCVD yogtseem ceeb rau kev tsim cov vaj huam sib luag hnub ci ua haujlwm siabNws ua rau muaj peev xwm tsim cov khoom siv sib xyaw ua ke nrog cov nqi hloov pauv hluav taws xob zoo dua. Cov thev naus laus zis no tseem ceeb heev rau kev tsim hluav taws xob ntau dua los ntawm lub hnub ci, ua raws li kev tsom mus rau lub zog rov ua dua tshiab thoob ntiaj teb. Cov kws tshawb fawb feem ntau tsimCov khoom siv GaInP/GaInAs/Gesiv MOCVD rau kev tsim cov roj teeb hnub ci ntau lub zog ua haujlwm tau zoo hauv kev lag luam. Cov qauv nyuaj no ua rau lub hnub ci nqus tau ntau qhov chaw ntawm lub hnub ci.

Piv txwv li, lub hnub ci III-V tsib-junction, tsim los ntawm kev siv MOCVD, tau txais kev hloov pauv hluav taws xob ntawm35.1%Lub cuab yeej 12 cm² no muaj cov qauv AlGaInP-AlGaAs-GaAs-InGaAs-InGaAs. Txhua lub subcell muaj cov zog bandgap tshwj xeeb, uas ua rau muaj kev ntes lub teeb zoo tshaj plaws. Lub peev xwm txheej txheej no ua rau MOCVD tsis tseem ceeb rau kev thawb cov ciam teb ntawm kev hloov pauv lub zog hnub ci.

MOCVD rau Cov Photodetectors Zoo

MOCVD kuj tseem ua lub luag haujlwm tseem ceeb hauv kev tsim cov photodetectors zoo. Cov khoom siv no hloov lub teeb mus rau hauv cov teeb liab hluav taws xob, nrhiav kev siv hauv kev sib txuas lus, kev thaij duab, thiab kev hnov. Cov txheej txheem no tso cai rau kev tswj hwm qhov tseeb ntawm cov khoom siv thiab cov txheej tuab, uas cuam tshuam ncaj qha rau kev ua haujlwm ntawm photodetector.

MOCVD pab txhawb kev loj hlob ntawm InGaAs PIN photodetector membranes ntawm InP substrates. Cov kws ua haujlwm tuaj yeem ua kom zoo dua InGaAs photodetector qhov kev rhiab heev rau wavelengths hauv ntau yam (0.4 μm-3.6 μm). Qhov kev ua kom zoo dua no tshwm sim los ntawm kev tswj cov khoom siv sib xyaw ua ke, xws li In0.53Ga0.47As, uas muaj bandgap ntawm 0.74 eV thiab npog cov wavelengths sib txuas lus tseem ceeb. MOCVD tso cai rau kev tso cov txheej txheem ntawm ntau txheej, suav nrog p- thiab n-hom InP, thiab ntau txheej InGaAs nrog cov tuab tshwj xeeb (piv txwv li, 2.2 μm undoped InGaAs absorption txheej). Cov txheej no yog qhov tseem ceeb rau kev txhais cov lus teb spectral ntawm photodetector.

Tsis tas li ntawd xwb, MOCVD ua rau muaj kev loj hlob ntawm(In1-xAlx) 2O3 zaj duab xis nrog qhov bandgap hloov tauntawm MgO substrates. Qhov bandgap tunability, cuam tshuam los ntawm cov tshuaj lom neeg sib xyaw thiab qhov kub thiab txias ntawm kev loj hlob, ncaj qha ua rau kev tsim cov photodetectors rhiab rau cov spectral tshwj xeeb. Qhov kev meej no txuas ntxiv mus rau qhov ceev teb thiab. Photodetectors siv MOCVD-grown Ga2O3 zaj duab xis tau ua pov thawj qhov ceev tebzoo dua li 0.1 vib nas thisTshwj xeeb, Schottky barrier photodiodes raws li Ga2O3 ntawm mica tau pom qhov kev teb sai no, qhia txog lub peev xwm ntawm cov thev naus laus zis rau kev ntes ceev ceev.

Qhov Precision thiab Versatility ntawm MOCVD

Kev Tso Cov Pa Tshuaj Uas Muaj Hlau Thiab Organic Muaj Cov Txiaj Ntsig Tshwj Xeeb Hauv Kev Tsim Khoom Siv Semiconductor. Nws Qhov Kev Ntsuas Tseeb Thiab Kev Siv Tau Zoo Ua Rau Nws Tseem Ceeb Rau Kev Tsim Cov Khoom Siv Hluav Taws Xob Thiab Optoelectronic Siab Kawg. Cov thev naus laus zis no tso cai rauKev tswj hwm zoo tshaj plaws rau cov khoom siv thiab cov qauv txheej txheem.

Lub Luag Haujlwm ntawm MOCVD hauv Kev Siv Tau Ntau Yam Khoom Siv

Cov txheej txheem tso zis no qhia tau tiascov khoom siv zoo kawg nkausNws tso ntau yam khoom siv. Cov no suav nrogCov ntaub ntawv II-VI, cov ntaub ntawv III-V, thiab cov yeeb yaj kiab nyias nyias uas muaj cov khoom siv crystalline uas muaj cov khoom sib xyaw ua ke. Nws kuj tsim cov micro/nanostructures, 0D, 1D, thiab 2D nanomaterials. Tshwj xeeb, nws ua tau zoo heev nrogCov khoom siv semiconductor III-V, suav nrog cov ntsiab lus hlau xws li gallium thiab indium, thiab pawg V cov ntsiab lus xws li arsenic thiab phosphorus.Cov qauv sib txawv ntawm GaAsthiabCov ntaub ntawv raws li GaN rau LEDs thiab cov khoom siv hluav taws xobyog cov ntawv thov uas siv ntau.

Qhov no yog ib txoj kev siv tau ntau yam. Nws tso cov khoom sib xyaw ua ke, nitrides, thiab oxides los ntawm kev sib txawv ntawm cov tshuaj ua ntej. Nws feem ntau nyiam rau cov ntaub ntawv phosphide (P). Rau cov ntaub ntawv raws li arsenide, txoj kev no thiab MBE muaj peev xwm zoo sib xws. Txawm li cas los xij,MBE yog txoj kev nyiam tshaj plaws rau kev loj hlob ntawm cov khoom siv antimonide (Sb)thiab rau cov qauv siab dua xws li quantum dots.

MOCVD rau Kev Tswj Txheej Txheem Tseeb

Cov txheej txheem ua rau kev loj hlob ntawm cov heterostructures nyuaj nrogkev ua kom raug ntawm qib atomic. Cov kws ua vaj tse tsim cov kev hloov pauv ntse ntawm cov txheej. Qhov no tshwm sim los ntawm kev hloov cov pa roj ua ntej uas ntws mus rau hauv lub reactor. Qhov kev tswj hwm no yog qhov tseem ceeb rau kev kho cov khoom siv hluav taws xob thiab kho qhov muag ntawm cov khoom siv semiconductor ntau txheej. Cov txheej txheem no suav hais tias yog 'kev tsim kho theem atomic'. Cov khaubncaws sab nraud povtseg crystalline nyias nyias yog tsim los ntawm ib lub atom los ntawm ib lub atom. Txoj kev tswj hwm siab no ua rau muaj kev loj hlob epitaxial. Cov atoms npaj lawv tus kheej rau hauv ib txoj kev txiav txim siab, ua piv txwv rau cov qauv siv lead ua hauv qab ntawm lub wafer. Qhov no ua kom ntseeg tau tias cov qauv siv lead ua txuas ntxiv mus rau txheej.

MOCVD qhov kev nthuav dav rau kev tsim khoom

Lub kaw lus no kuj muaj kev nthuav dav tseem ceeb rau kev tsim khoom ntau. Cov reactors kev lag luam haum rau ntau yamcov ncuav mog qab zib. Cov Planetary Reactors, piv txwv li, kovcov wafers txog li 200 mm (kwv yees li 8 nti)Qhov no txhawb nqa kev tsim khoom pheej yig thiab muaj ntau. Lub tshuab GaN Planetary Reactor tiam tsib tau loj hlob yim lub epiwafers 6-nti hauv ib zaug xwb.

• Cov ncuav mog qab zib 4-ntiyog siv dav rau kev sib npaug ntawm tus nqi thiab qhov ntim hauv kev tsim khoom ntau.
• Txawm hais tias muaj teeb meem txog kev siv tshuab los xij, cov wafers 6-nti tab tom nce qib rau kev tsim khoom ntau.

MOCVD yog qhov tseem ceeb rau kev tsim ntau yam khoom siv hluav taws xob thiab optoelectronic niaj hnub. Nws lub peev xwm tshwj xeeb hauv kev ua kom raug thiab cov khoom siv hloov pauv tau tsav kev tsim kho tshiab thoob plaws ntau yam kev lag luam high-tech. Cov thev naus laus zis no ua rau muaj kev tsim cov qauv semiconductor nyuaj nrog kev tswj hwm zoo heev. MOCVD txuas ntxiv mus ua lub hauv paus tseem ceeb, ua rau muaj kev nce qib hauv kev teeb pom kev zoo, kev sib txuas lus, kev suav lej, thiab lub zog rov ua dua tshiab. Nws ib txwm thawb cov ciam teb ntawm qhov ua tau hauv kev tshawb fawb txog cov khoom siv siab heev.