Isetyenziselwa ntoni i-MOCVD?

I-MOCVD isetyenziswa kakhulu ekukhuliseni iifilimu ezincinci ze-semiconductor. Ezi filimu zibalulekile kwizixhobo ze-elektroniki kunye ne-optoelectronic eziphambili. Imakethi yetekhnoloji ye-MOCVD ibonisa ukukhula okuqinileyo. Iingcali ziqikelela ixabiso layo lemarike kwiI-USD 1.1 yezigidigidi ngo-2023Baqikelela ukuba ingeniso iza kufikelela kwi-USD 2.8 yeebhiliyoni ngo-2033, nto leyo ebonisa izinga lokukhula konyaka elidibeneyo (CAGR) le-9.7%. Olu lwando lubalulekileyo lugxininisa indima ebalulekileyo ye-MOCVD ekuphuculeni ubuchwepheshe.

Izinto ezibalulekileyo ekufuneka ziqwalaselwe

• I-MOCVDikhulisa iifilimu ezincinci ze-semiconductor. Ezi filimu zibalulekile kwizixhobo ezininzi ze-elektroniki.
• I-MOCVD inceda ekwenzeni izixhobo eziphambili. Ezi ziquka ii-LED, ii-laser diodes, kunye ne-power electronics.
• I-MOCVD ilungele amandla avuselelekayo. Inceda ekudaleni iiseli zelanga kunye nezinzwa zokukhanya ezingcono.
• I-MOCVD inika ulawulo oluhle kakhulu. Yakha iileya ngobuchule beathomu ukuze isixhobo sisebenze ngcono.
• I-MOCVD inokwenza izixhobo ezininzi ngaxeshanye. Oku kuyenza ilungele imveliso enkulu.

I-MOCVD yezixhobo ze-Advanced Optoelectronic

Ukususwa komphunga wekhemikhali ye-metal-organic (MOCVD)Idlala indima ebalulekileyo ekwenziweni kwezixhobo ze-optoelectronic eziphambili. Le teknoloji ivumela ukukhula ngokuchanekileyo kweefilimu ezincinci ze-semiconductor, ezisisiseko ekusebenzeni kwee-diode zanamhlanje ezikhupha ukukhanya, ii-laser diode, kunye nee-infrared emitters.

I-MOCVD kwiMveliso ye-LED

Le ndlela yokufaka umbane ibaluleke kakhulu ekwenzeni ii-LED (ii-LED) ezisebenza kakuhle. Inceda ekukhuleni kweenkqubo ezibalulekileyo zezinto ezifanaIGallium Nitride (GaN), iGallium Arsenide (GaAs), kunye neIndium Phosphide (InP), ihamba neiikhompawundi ze-arsenide/phosphide (As/P)Ezi zinto zenza isiseko sokukhupha ukukhanya ngokufanelekileyo. Umzekelo,ii-LED ze-InGaN ezinee-multi-quantum-wells ezisebenza kakuhle kakhulu ezingama-407 nm violetzenziwe kusetyenziswa le ndlela. Ezi zixhobo zihlala ziquka umaleko wokusasazeka komsinga weGaN ongafakwanga kunye nemiqobo ye-AlGaN enomxholo ophezulu we-aluminium. Olu yilo luphucula ukusebenza kakuhle kokukhupha ukukhanya ngokunciphisa ukugcwala komsinga we-injection.Imithombo ye-InGaN/GaN ene-quantum ezininzi (ii-MQW)imele ulwakhiwo oluqhelekileyo lwezinto zokwenza i-LED ekhanyayo kakhulu. Ukukhula kusetyenziswa le ndlela kuphucula kakhuluukufana kunye nokugubungela ezi filimu zincinci ngokweathom, nto leyo echaphazela ngokuthe ngqo ukuhlanganiswa kwezixhobo ze-2D ezikumgangatho we-wafer kwizixhobo ze-optoelectronic ezisebenza kakuhle.I-LED ebomvu ye-InGaN, ekhupha i-625 nm, ifikelele kwi-record external quantum efficiency (EQE) ye-10.5%ngenkqubo enzima ye-epitaxial equka iileya ze-stacked superlattice kunye nokunciphisa uxinzelelo.

I-MOCVD yeeDiode zeLaser

Iidayidi zelaser, izinto ezibalulekileyo kunxibelelwano lwe-optical kunye nokugcinwa kwedatha, zixhomekeke kakhulu kule teknoloji. Le ndlela ivumela ukukhula kweefilimu ze-epitaxial ezikumgangatho ophezulu zisebenzisa iinkqubo zezinto ezifana neGallium Arsenide (GaAs), iGallium Nitride (GaN), kunye ne-Indium Phosphide (InP). Iindlela zokukhula zinceda uphuhliso lweii-diode ze-laser ezibonakalayo ze-wavelength ezivela kwi-III-V alloys ezifana ne-InGaPAs kunye ne-InGaAlPNgaphezu koko,Ii-InAs/GaAs quantum dot laser diodes ezikhuliswe yile teknoloji zikhupha ukukhanya kwe-O-band, ngakumbi kwi-1.3 µmUkuchaneka kwenkqubo yokufaka izinto kunegalelo elikhulu ekuthembekeni nasekusebenzeni kakuhle kwezi zixhobo. Umzekelo, ibe negalelo elikhulu ekukhuleni kweefilimu ze-epitaxial ezikumgangatho ophezulu zee-laser diodes ezisekelwe kwi-ZnSe, nto leyo ekhokelele ekuphuculeni okukhulu kwiindlela zazo zokukhanya.ubomi bonke, ifikelela kwiiyure ezingama-500 kwi-20°C phantsi kokusebenza kwamaza okuqhubekayoAbaphandi basebenzisa le ndlela ukukhulisaii-laser ze-InGaAs-AlGaAs ezine-quantum well ezixineneyo kwindawo ebanzi ezisebenza malunga ne-975nm, nto leyo enceda ekuqondeni iindlela zokuwohloka.

I-MOCVD kwi-Infrared Emitters

Le ndlela yokufaka ibalulekile ekuveliseni ii-emitters ze-infrared eziphambili, ezifumana usetyenziso ekuqondeni, ekufoteni, nasekunxibelelaneni. Le ndlela ivumela ukufakwa ngokuchanekileyo kwezakhiwo zezinto ezintsonkothileyo. Umzekelo, ii-laser eziphakathi kwe-infrared zikhuliswa kusetyenziswa le nkqubo. Ezi zixhobo zintsonkothileyo ziquka ii-claddings ze-AlAsSb, iindawo ezisebenzayo ze-InAsSb ezixineneyo, kunye neendawo ezisebenzayo ze-quantum ze-InAsSb/InAsP ezininzi, uhlobo lwe-I. Zikwaquka iileya ze-GaAsSb/InAs ze-semi-metal, ezisebenza njengemithombo yangaphakathi ye-electron ye-laser ye-injection ye-multi-stage, kwaye i-AlAsSb isebenza njengomaleko wokuvalela i-electron. Ezi zakhiwo zimeleizixhobo zokuqala ezinamanqanaba amaninzi ezikhuliswe ngale ndlela, ebonisa amandla obu buchwephesha bokwenza izinto ze-infrared ezikhethekileyo kakhulu. Amandla okulawula ukufana kunye nokugubungela iifilimu ezenziweyo kubalulekile ekusebenzeni kwezi zixhobo ze-infrared eziphambili.

I-MOCVD kwi-Electronics eziSebenza ngokuPhezulu

Ukususwa komphunga wekhemikhali ye-metal-organic (MOCVD)yiteknoloji engundoqo yokuphuhlisa izixhobo ze-elektroniki ezisebenza kakuhle. Le ndlela ivumela ukukhula ngokuchanekileyo kwee-semiconductor layers ezibalulekileyo kwii-electronics zamandla, ii-transistors ezisebenzisa i-frequency ephezulu, kunye nee-sensors eziphambili.

I-MOCVD ye-Power Electronics

Izixhobo ze-elektroniki zifuna izixhobo ezikwaziyo ukumelana noxinano lwamandla aphezulu kunye nobushushu obuphezulu. I-MOCVD ibalulekile ekuveliseni izixhobo ezifana neGallium Nitride (GaN) kunye neSilicon Carbide (SiC), ezinazoukuqhuba okuphezulu kobushushu kunye nombane ophezulu wokuqhekekaEzi mpawu zibalulekile kwiinkqubo zamandla zanamhlanje.Ii-semiconductors ze-wide-bandgap ezifana ne-SiC kunye ne-GaNzilungele kakuhle iindawo ezifuna amandla amaninzi. Izixhobo ziphantsi kombane ophezulu, umbane, kunye nobushushu kwezi ndawo. Ii-diode ze-GaN, umzekelo, ezenziwe ngemimandla yokuntywila ekhuliswe yi-MOCVD, zibonakalise ukuba i-voltages yokuqhekeka idlula1.3 kVIzixhobo ezilishumi elinesibini ezivela kwi-wafer enye zibonise obu buchule, zifikelela malunga nama-90 ekhulwini lomda we-theory parallel-plane.

I-MOCVD ivumela ukukhula kweiileya ze-epitaxial ezikumgangatho ophezulu, ezinekristale enye kwi-substrates ze-SiC ezinobunzima obuphantsiOku kubalulekile kwii-semiconductors zamandla. Le nkqubo inika ulawulo oluchanekileyo phezu kobukhulu, uxinaniso lwe-doping, kunye nokufana kweleya ye-epitaxial. Ezi zinto ziphucula iipropati zombane ezibalulekileyo kwizixhobo ze-elektroniki ezintsonkothileyo. Ngaphezu koko, i-MOCVD ifanelekile kwimveliso enkulu. Ivumela ukukhula kweleya ze-epitaxial kwi-substrates ezincinci nezinkulu, okwenza izixhobo ezisekelwe kwi-SiC zibe nexabiso eliphantsi lokusetyenziswa ngokubanzi. Izixhobo ze-semiconductor ze-III-nitride, kuqukaI-GaN, i-AlGaN, i-InGaN, i-AlN, kunye ne-InAlN, zikhuliswa ngale ndlela kwizicelo zokusebenza okuphezulu kwi-electronics zamandla, i-photonics, kunye netekhnoloji yamandla acocekileyo. Ezi zinto zibalulekile kwizixhobo ezinje ngee-transistors zamandla ezisebenzayo kakhulu (ii-HEMT), ii-LED ezibonakalayo ze-UV, kunye nee-laser diodes.

I-MOCVD kwiiTransistors eziQhelekileyo kakhulu

Iitransistor ezisebenzisa umbane ophezulu, ezibalulekileyo kwiinkqubo zonxibelelwano eziphambili, nazo zixhamla kakhulu kwi-MOCVD. Le nkqubo inceda ukukhula kweenkqubo zezinto ezisekelwe kwi-InP kwizixhobo ezifana neeTransistor ze-High Electron Mobility (IiHEMT), iiHeterojunction Bipolar Transistors (iiHBT), iiPIN, iMixer, kunye neeMultiplier diodesUmzekelo, abaphandi benza ii-AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) kwi-4-intshi GaN kwi-SiC substrates. I-epitaxial wafer, ekhuliswe yi-MOCVD, ine-i-GaN buffer layer, i-0.9 μm eyenziwe ngempazamo i-GaN channel layer, i-25 nm Al0.25Ga0.75N barrier layer, kunye ne-2 nm GaN cap layer. Ukulinganiswa kwe-Hall kubushushu begumbi kubonise ukuhamba kwe-electron kwe-1500 cm²/V·s, ukumelana kweshiti ye-280 Ω/sq, kunye noxinano lweshiti ye-1 × 10¹³/cm².

Ukuphucula iipateni ze-ohmic etching (ii-OEP) kwizicelo ze-Ka-band kuphucula ngakumbi ukusebenza. Ipateni yomgca we-1 μm i-OEP ibonise iziphumo ezigqwesileyo xa ithelekiswa nezinye iipateni.

Olu lwakhiwo lwe-OEP oluphuculweyo, kunye neengqimba ze-epitaxial ezikhuliswe kwi-MOCVD, lukhokelela ekusebenzeni kakuhle kweefrikhwensi zerediyo. Lufezekisa oku ngokunciphisa ukumelana nokufikelela kunye nokwandisa indawo yoqhagamshelwano.

I-MOCVD yeeSensors eziPhambili

Izinzwa eziphambili zixhomekeke kwiileya ze-semiconductor ezicwangciswe ngokuchanekileyo ukuze ziphucule uvakalelo kunye nokukhetha.I-2D transition metal dichalcogenides (TMDs) efana ne-molybdenum disulfide (MoS2)ibalulekile kwizixhobo ze-nano-electronic zesizukulwana esilandelayo. Ezi zicelo zihlala ziquka ubuchwepheshe obuphambili bokubona, obuxhamla ekukhuleni ngokuchanekileyo komaleko ngomaleko kunye nekristale ephezulu enikezelwa yile ndlela.

Iileya ze-ZnGa2O4 ezikhuliswe kwi-MOCVD ziluncedo kakhulu kwiisensa zegesi ezingenayo igesi. Uphando lubonise ukuba unyango lomphezulu weplasma luphucula kakhulu ukusebenza kwazo. Oku kukhokelela ekuphucukeni okuphindwe kasibhozo kwimpendulo yesensa yoxinzelelo lwegesi lwe-5 ppm NO, olufikelela kwi1276.1%Le sensor ephuculweyo ikwafikelele kumda ophantsi wokufunyanwa kwe-2.4 ppb, nto leyo ebonisa ukusebenza kakuhle kwendlela yokwenza ii-sensors zegesi ze-NO ezisebenza kakuhle.

Ngaphezu koko,ii-nanowires ze-indium oxide kunye neefilimu ezincinci ze-In2O3Ezi zinto zikhuliswe ngale nkqubo zibonisa ukukhetha okuhle kwi-NO2. Ezi zinto zibonisa ukuphazamiseka okuncinci okuvela kwezinye iigesi, nto leyo ebonisa ukukhetha okuphuculweyo. I-epilayer ye-ZnGa2O4 (ZGO) ekhuliswe yi-MOCVD ibonise uvakalelo oluphezulu, ukuguquguquka, kunye nokukhetha kokubona i-NO kwi-300 °C. I-sensor ye-ZGO ibonise uvakalelo lwe-1.88xa ivezwe kwi-125 ppb NO. Ibonakalise uvakalelo oluphezulu kwi-NO ngelixa ingasabeli kangako kwi-CO2, i-CO, kunye ne-SO2, nto leyo ebonisa ukukhetha okuphuculweyo. I-sensor ye-ZGO ikwabonise impendulo enkulu kwi-NO xa ithelekiswa ne-NO2. Ukulinganisa kwemigaqo yokuqala kuqinisekisile ukuba impendulo enamandla ye-sensor yegesi ye-ZGO kwi-NO ibangelwa lutshintsho olukhulu kumsebenzi wokusebenza xa i-NO molecule ifakwa kumphezulu wefilimu encinci.

I-MOCVD yamandla ahlaziyekayo kunye nokuchongwa

Ukufakwa komphunga wekhemikhali yesinyithi-yendalo (I-MOCVD) inegalelo elikhulu ekuphuculeni ubuchwepheshe bamandla avuselelekayo kunye neenkqubo zokufumanisa ezintsonkothileyo. Le ndlela ivumela ukudalwa kwezinto ezisebenza kakuhle ezibalulekileyo kwiiseli zelanga ezisebenzayo kunye nezixhobo zokubona iifoto ezinobuthathaka.

I-MOCVD kwiiseli zelanga ezidibeneyo ezininzi

I-MOCVD yikubalulekile ekuveliseni iiphaneli zelanga ezisebenzayo kakhuluIvumela ukudalwa kwee-semiconductors ezidityanisiweyo ezinezinga eliphuculweyo lokuguqulwa kwamandla. Le teknoloji ibalulekile ekuveliseni amandla angakumbi avela elangeni, ihambelana nogxininiso lwehlabathi kumandla avuselelekayo. Abaphandi badla ngokwenza izintoIzixhobo zeGaInP/GaInAs/Gekusetyenziswa i-MOCVD kwimveliso yezorhwebo yeeseli zelanga ezidibanayo ezininzi ezisebenzayo. Ezi zakhiwo zintsonkothileyo zinceda kakhulu ekufunxeni ukukhanya kwelanga kwiindawo ezahlukeneyo ze-solar spectrum.

Umzekelo, iseli yelanga ye-III-V enama-junction amahlanu, eyenziwe kusetyenziswa i-MOCVD, ifikelele ekusebenzeni kakuhle kokuguqula amandla35.1%Esi sixhobo sinobukhulu obuyi-12 cm² sinesakhiwo se-AlGaInP-AlGaAs-GaAs-InGaAs-InGaAs. I-subcell nganye yayinamandla athile e-bandgap, okuvumela ukubanjwa kokukhanya okufanelekileyo. Olu buchule bokubeka iileya buyenza i-MOCVD ibe yeyona nto ibalulekileyo ekutyhaleni imida yokuguqulwa kwamandla elanga.

I-MOCVD yeefotodetector ezisebenzayo

I-MOCVD ikwadlala indima ebalulekileyo ekwenzeni ii-photodetectors ezisebenzayo. Ezi zixhobo ziguqula ukukhanya kube ziimpawu zombane, zifumane usetyenziso kunxibelelwano, kwimifanekiso, nakwiziva. Le ndlela ivumela ulawulo oluchanekileyo malunga nokwakheka kwezinto kunye nobukhulu beeleya, nto leyo echaphazela ngokuthe ngqo ukusebenza kwe-photodetector.

I-MOCVD inceda ukukhula kwee-membrane ze-InGaAs PIN photodetector kwi-substrates ze-InP. Iinjineli zinokuphucula uvakalelo lwe-spectral ye-InGaAs photodetector kwii-wavelengths ngaphakathi koluhlu olubanzi (0.4 μm-3.6 μm). Olu phuculo lwenzeka ngokulawula ngokuchanekileyo ukwakheka kwezinto, njenge-In0.53Ga0.47As, ene-bandgap ye-0.74 eV kwaye igubungela ubude be-wavelengths yonxibelelwano oluphambili. I-MOCVD ivumela ukufakwa ngokuchanekileyo kweeleya ezahlukeneyo, kubandakanya i-p- kunye ne-n-type InP, kunye neeleya ezininzi ze-InGaAs ezinobukhulu obuthile (umz., ileya yokufunxa ye-InGaAs engafakwanga i-2.2 μm). Ezi leya zibalulekile ekuchazeni impendulo ye-spectral ye-photodetector.

Ngaphezu koko, i-MOCVD ivumela ukukhula kweIifilimu ze-2O3 (In1-xAlx) ezine-bandgap ehlengahlengiswayokwi-substrates ze-MgO. Ukuguquguquka kwe-bandgap, okuchatshazelwa yikhemikhali kunye nobushushu bokukhula, kuvumela ngokuthe ngqo ukwenziwa kwee-photodetectors ezijongene noluhlu oluthile lwe-spectral. Oku kuchaneka kufikelela nakwisantya sokuphendula. Ii-Photodetectors ezisebenzisa iifilimu ze-Ga2O3 ezikhuliswe kwi-MOCVD zibonakalise isantya sokuphendula.ingcono kunemizuzwana eyi-0.1Ngokukodwa, ii-photodiodes ze-Schottky barrier ezisekelwe kwi-Ga2O3 kwi-mica zibonise le mpendulo ikhawulezayo, zigxininisa amandla eteknoloji okufumanisa ngesantya esiphezulu.

Ukuchaneka kunye nokuguquguquka kwe-MOCVD

Ukufakwa komphunga wekhemikhali ye-Metal-Organic kunika iingenelo ezikhethekileyo kwimveliso ye-semiconductor. Ukuchaneka kwayo kunye nokuguquguquka kwayo kwenza kube yinto efunekayo ekudaleni izixhobo ze-elektroniki kunye ne-optoelectronic eziphambili. Le teknoloji ivumela ukusetyenziswa kwe-ulawulo olukhethekileyo kwiipropati zezinto kunye nezakhiwo zeeleya.

Indima ye-MOCVD kwi-Material Versatility

Le ndlela yokubeka ibonisaukuguquguquka okumangalisayo kwezinto ezibonakalayoIgcina uluhlu olubanzi lwezinto. Ezi ziqukaIzinto ze-II-VI, izinto ze-III-V, kunye neefilimu ezincinci ze-crystalline compound semiconducting thin films. Ikwadala ii-micro/nanostructures, i-0D, i-1D, kunye ne-2D nanomaterials. Ngokukodwa, igqwesa ngeIi-semiconductor ze-III-V, equka izinto zesinyithi ezifana ne-gallium kunye ne-indium, kunye nezinto zeqela V ezifana ne-arsenic kunye ne-phosphorus.Ii-heterostructures zeGaAskwayeIzixhobo ezisekelwe kwi-GaN ze-LEDs kunye nezixhobo ze-elektronikizizicelo eziqhelekileyo.

Le yindlela eguquguqukayo kakhulu. Ibeka ii-semiconductors ezidityanisiweyo, ii-nitrides, kunye nee-oxides ngokusebenzisa i-precursor chemistry eyahlukileyo. Ihlala ikhethwa kwizinto ze-phosphide (P). Kwizinto ezisekelwe kwi-arsenide, le ndlela kunye ne-MBE zinamandla afanayo. Nangona kunjalo,I-MBE yindlela ekhethwayo yokukhula kwezinto ze-antimonide (Sb)kunye nezakhiwo eziphucukileyo ezifana namachaphaza e-quantum.

I-MOCVD yoLawulo oluchanekileyo lweLeya

Le ndlela ivumela ukukhula kwezakhiwo ezintsonkothileyo ze-heterostructuresukuchaneka kwinqanaba le-athomuIinjineli zenza utshintsho olubukhali ngokweathom phakathi kweeleya. Oku kwenzeka ngokutshintsha nje iigesi zangaphambili eziya kwi-reactor. Olu lawulo lubalulekile ekulungiseni iipropati ze-elektroniki kunye nezokukhanya zezixhobo ze-semiconductor ezinamaleya amaninzi. Le nkqubo ithathwa 'njengokwakhiwa kwenqanaba le-athomu'. Iileya ze-crystalline ezibhityileyo kakhulu zakhiwe yiathomu. Le ndlela ilawulwa kakhulu yenza kube lula ukukhula kwe-epitaxial. Iiathomu zizihlela ngendlela ecwangcisiweyo kakhulu, zilinganisa isakhiwo sekristale esingaphantsi kwe-wafer. Oku kuqinisekisa ukuqhubeka kwesakhiwo sekristale kumaleya ngamaleya.

Ukwanda kweMOCVD kwiMveliso

Le nkqubo ikwabonelela ngokwandiswa okukhulu kwemveliso enomthamo omkhulu. Ii-reactors zoshishino zithwala iintlobo ngeentlobo ze-iiwafersIi-Planetary Reactors, umzekelo, isiphathoiiwafers ukuya kuthi ga kwi-200 mm (malunga ne-8 intshi)Oku kuxhasa ukwenziwa kwemveliso ngexabiso eliphantsi nelinomthamo ophezulu. I-GaN Planetary Reactor yesizukulwana sesihlanu ikhule ii-epiwafers ezisibhozo ze-intshi ezi-6 ngexesha elinye.

• Iiwafers ezi-4 intshizisetyenziswa kakhulu ekulinganiseni iindleko kunye nomthamo kwimveliso enomthamo omkhulu.
• Iiwafers eziziisentimitha ezi-6 ziyathandwa kakhulu xa kusenziwa imveliso eninzi, nangona kukho imingeni yobugcisa.

I-MOCVD ibalulekile ekwenzeni uluhlu olubanzi lwezixhobo zanamhlanje ze-elektroniki kunye ne-optoelectronic. Amandla ayo ahlukileyo ekuchanekeni nasekusebenzisekeni kwezinto aqhuba ubuchule kwiinkampani ezininzi zobugcisa obuphezulu. Le teknoloji ivumela ukudalwa kwezakhiwo ze-semiconductor ezintsonkothileyo ezinolawulo olugqwesileyo. I-MOCVD iyaqhubeka njengetekhnoloji yesiseko, ivumela ukuqhubela phambili ekukhanyiseni, kunxibelelwano, kwikhompyutha, nakumandla ahlaziyekayo. Ihlala ityhala imida yoko kunokwenzeka kwisayensi yezinto eziphucukileyo.