MOCVD ikoreshwa iki?

MOCVD ikoreshwa cyane cyane mu guhinga filime ntoya za semiconductor. Izi filime ni ingenzi ku bikoresho bya elegitoroniki n'ibikoresho bya optoelectronic bigezweho. Isoko ry'ikoranabuhanga rya MOCVD rigaragaza iterambere rikomeye. Impuguke zigereranya agaciro kayo ku isoko kurimiliyari 1.1 z'amadolari y'Amerika mu 2023Bateganya ko inyungu zizagera kuri miliyari 2.8 z'amadolari y'Amerika mu 2033, bigaragaza ko igipimo cy'izamuka ry'ubukungu ku mwaka (CAGR) kizaba 9.7%. Uku kwaguka gukomeye bigaragaza uruhare rukomeye rwa MOCVD mu iterambere ry'ikoranabuhanga.

Ibintu by'ingenzi byakunzwe

• MOCVDikura filime ntoya za semiconductor. Izi filime ni ingenzi ku bikoresho byinshi by'ikoranabuhanga.
• MOCVD ifasha mu gukora ibikoresho bigezweho. Ibi birimo LED, laser diodes, n'ibikoresho by'ikoranabuhanga bitanga ingufu.
• MOCVD ni nziza ku ngufu zishobora kuvugururwa. Ifasha mu gukora uturemangingo tw’izuba n’ibikoresho by’urumuri byiza.
• MOCVD itanga ubuyobozi bwiza. Ikora urwego rufite ubushobozi bwo gukora neza kugira ngo igikoresho kirusheho gukora neza.
• MOCVD ishobora gukora ibikoresho byinshi icyarimwe. Ibi bituma ikora neza mu buryo bunini.

MOCVD ku bikoresho bya elegitoroniki bigezweho

Gushyira umwuka mu byuma biva mu mwuka (MOCVD)Ifite uruhare runini mu gukora ibikoresho bya optoelectronic bigezweho. Iri koranabuhanga rituma habaho gukura neza kwa filime nto za semiconductor, ari nabyo by'ingenzi mu mikorere ya diode zigezweho zitanga urumuri, diode za laser, na emitters za infrared.

MOCVD mu nganda za LED

Ubu buryo bwo gushyiramo urumuri ni ingenzi cyane mu gukora amatara yo mu bwoko bwa LED (LEDs) akora neza cyane. Bufasha mu gukura kw'ibikoresho by'ingenzi nkaGallium Nitride (GaN), Gallium Arsenide (GaAs), na Indium Phosphide (InP)hamwe naibinyabutabire bya arsenide/fosfide (As/P)Ibi bikoresho ni byo shingiro ry'ibyuka bitanga urumuri neza. Urugero,Ibyuma bya LED bya InGaN bifite imikorere yo hejuru ya 407 nm violetbikorwa hakoreshejwe ubu buryo. Ibi bikoresho akenshi biba birimo urwego rwo gukwirakwiza umuyoboro wa GaN udafite dope hamwe n'imiyoboro ya AlGaN ifite aluminiyumu nyinshi. Iyi miterere irushaho kunoza imikorere y'urumuri binyuze mu kugabanya umuyoboro w'amashanyarazi ukoreshwa mu gutera.InGaN/GaN multi-quantum wells (MQWs)bigaragaza imiterere isanzwe y'ibikoresho byo gukora LED ifite urumuri rwinshi. Gukura hakoreshejwe ubu buryo birushaho kunoza cyaneuburinganire n'uburyo izi filime zoroshye za atome zigaragara, ibyo bigira ingaruka zitaziguye ku ikorwa ry’ibikoresho bya 2D ku bikoresho bya optoelectronic bifite imikorere myiza.Itara ry'umutuku rya InGaN, ritanga umusaruro kuri 625 nm, ryageze ku rugero rwa 10.5% ku buhanga bwo hanze bwa quantum (EQE)binyuze mu buryo bugoye bwo gukoresha epitaxial burimo ibice bya stacked superlattice hamwe no kwishyura strain.

MOCVD kuri Diode za Laser

Diode za laser, ibice by'ingenzi mu itumanaho ry'amajwi no kubika amakuru, zishingiye cyane kuri ubu buryo. Ubu buryo butuma habaho gukura kwa filime nziza za epitaxial zikoresha sisitemu z'ibikoresho nka Gallium Arsenide (GaAs), Gallium Nitride (GaN), na Indium Phosphide (InP). Uburyo bwo gukura bworohereza iterambere ryadiode za laser zigaragara z'uburebure bw'umurambararo ziturutse kuri aloyi za III-V nka InGaPAs na InGaAlPByongeye kandi,InAs/GaAs quantum dot laser diodes yakuwe muri ubu buryo itanga urumuri rwa O-band, cyane cyane kuri 1.3 µm. Uburyo bwo gushyiramo neza bigira uruhare runini mu kwizerwa no mu gihe cy'ubuzima bw'ibi bikoresho. Urugero, byagize uruhare runini mu guteza imbere filime nziza za epitaxial kuri ZnSe-based laser diodes, bituma habaho iterambere rikomeye mu mikorere yabyo.ubuzima bwose, kugera ku masaha agera kuri 500 kuri 20°C mu gihe cy'imikorere y'umuraba idahwemaAbashakashatsi banakoresha ubu buryo kugira ngo bakurelasers za InGaAs-AlGaAs zometseho ingano imwe ya quantum zikora kuri hafi 975nm, bifasha mu gusobanukirwa uburyo bwo kwangirika.

MOCVD muri Emitters za Infrared

Ubu buryo bwo gushyiramo ibintu ni ingenzi cyane mu gukora imiyoboro ya infrared igezweho, ikoreshwa mu kumva, gufata amashusho no gutumanaho. Ubu buryo bwemerera gushyiramo neza imiterere y'ibintu bigoye. Urugero, imiyoboro ya infrared ikoreshwa hagati, ihingwa hakoreshejwe ubu buryo. Ibi bikoresho bigezweho birimo imigozi ya AlAsSb, uturere dukora twa InAsSb, n'uturere dukora neza twa InAsSb/InAsP mu byiciro byinshi. Bifite kandi imiterere ya GaAsSb/InAs ya semi-metal, ikora nk'isoko ry'imbere rya electron za lasers za injection za multi-stage, kandi AlAsSb ikora nk'urwego rwo gufunga electron. Izi miterere zigaragazaibikoresho bya mbere bifite ibyiciro byinshi byakuze hakoreshejwe ubu buryo, bigaragaza ubushobozi bw'ikoranabuhanga bwo gukora ibice byihariye bya infrared. Ubushobozi bwo kugenzura imiterere n'uburyo filime zakozwemo zikoreshwa ni ingenzi cyane mu mikorere y'ibi bikoresho bya infrared bigezweho.

MOCVD mu ikoranabuhanga rigezweho

Gushyira umwuka mu byuma biva mu mwuka (MOCVD)ni ikoranabuhanga ry'ingenzi mu guteza imbere ibikoresho by'ikoranabuhanga bigezweho. Ubu buryo butuma habaho gukura neza kw'ibice bya semiconductor ingenzi ku bikoresho by'ikoranabuhanga bikoresha ingufu, transistors zifite frequency yo hejuru, na sensor zigezweho.

MOCVD y'ibikoresho by'ikoranabuhanga bikoresha ingufu

Ibikoresho by'amashanyarazi bikenera ibikoresho bishobora guhangana n'ubucucike bw'amashanyarazi buri hejuru n'ubushyuhe bukabije. MOCVD ni ingenzi cyane mu gukora ibikoresho nka Gallium Nitride (GaN) na Silicon Carbide (SiC), bifiteubushobozi bwo gutwara ubushyuhe bwinshi n'imbaraga nyinshi zo kwangirikaIyi miterere ni ingenzi ku buryo bw'amashanyarazi bugezweho.Imashini zikoresha ikoranabuhanga rya "wide-band-gap" nka SiC na GaNzikwiriye cyane ahantu hakoresha ingufu nyinshi. Ibikoresho bikorerwamo ingufu nyinshi, umuriro, n'ubushyuhe muri ubu buryo. Urugero, diode za GaN, zakozwe mu turere twa MOCVD twakuriyemo, zagaragaje ko ingufu zangiritse zirenze1.3 kVIbikoresho cumi na bibiri byakozwe muri wafer imwe byagaragaje ubwo bushobozi, bigera kuri 90 ku ijana by'umupaka w'ikigereranyo cy'ikoreshwa ry'ikoranabuhanga.

MOCVD ituma habaho iterambere ryaurwego rwo hejuru rw'ubuziranenge, rufite ibara rimwe rya epitaxial ku duce twa SiC dufite ubucucike bukeIbi ni ingenzi cyane ku byuma bikoresha ingufu. Iyi gahunda itanga uburyo bwo kugenzura neza ubugari, ingano y’ibikoresho bikoreshwa mu gupima, n’uburyo urwego rw’amashanyarazi rungana. Ibi bintu binoza imiterere y’amashanyarazi ikenewe ku bikoresho by’ikoranabuhanga bigoye. Byongeye kandi, MOCVD ikwiriye gukorwa ku rwego runini. Ituma urwego rw’amashanyarazi rukura haba ku bikoresho bito n’ibinini, bigatuma ibikoresho bishingiye kuri SiC bihendutse kugira ngo bikoreshwe ku bantu benshi. Ibikoresho bya semiconductor bya III-nitride, harimoGaN, AlGaN, InGaN, AlN, na InAlN, bihingwa binyuze muri ubu buryo kugira ngo bikoreshwe mu buryo buhanitse mu by’ikoranabuhanga rikoresha ingufu, fotoniki, n’ikoranabuhanga rikoresha ingufu zisukuye. Ibi bikoresho ni ingenzi ku bikoresho nka transistors zikoresha ingufu zikoresha ingufu nyinshi (HEMTs), LED zigaragara na UV, na diode za laser.

MOCVD muri Transistors zikoresha Frequency nyinshi

Transistors zifite frequency yo hejuru, z'ingenzi kuri sisitemu zigezweho z'itumanaho, nazo zungukira cyane kuri MOCVD. Iyi gahunda yoroshya iterambere rya sisitemu z'ibikoresho bishingiye kuri InP ku bikoresho nka High Electron Mobility Transistors (HEMTs), Heterojunction Bipolar Transistors (HBTs), PIN, Mixer, na Multiplier diodesUrugero, abashakashatsi bakora AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) kuri GaN ya santimetero 4 kuri substrates za SiC. Wafer ya epitaxial, yahinzwe na MOCVD, igizwe n'urwego rwa i-GaN buffer, urwego rwa GaN channel rwa 0.9 μm rwashyizwemo umuyoboro utabigambiriye, urwego rwa barrier rwa 25 nm Al0.25Ga0.75N rwa 2 nm, n'urwego rwa GaN cap rwa 2 nm. Ibipimo bya Hall ku bushyuhe bw'icyumba byagaragaje mobility ya electron ya1500 cm²/V·s, ubushobozi bwo guhangana n'urupapuro rwa 280 Ω/sq, n'ubucucike bw'urupapuro rwa 1 × 10¹³/cm².

Gukoresha neza imiterere ya ohmic etching (OEPs) mu bikorwa bya Ka-band byongera imikorere. Imiterere ya OEP ya 1 μm yagaragaje umusaruro mwiza ugereranije n'izindi imiterere.

Iyi miterere ya OEP nziza, hamwe n'ibice bya epitaxial byatewe na MOCVD, bituma imikorere ya radiyo irushaho kuba myiza. Ibi bigeraho binyuze mu kugabanya ubushobozi bwo kwinjira no kongera aho umuntu ahurira.

MOCVD ku bikoresho bigezweho

Ibikoresho bigezweho byishingikiriza ku bice bya semiconductor byakozwe neza kugira ngo byongere ubushobozi bwo kumenya no guhitamo.Dichalcogenides (TMDs) zo mu bwoko bwa 2D transition metal nka molybdenum disulfide (MoS2)ni ingenzi cyane ku bikoresho bya elegitoroniki byo mu gisekuru gitaha. Izi porogaramu akenshi zirimo ikoranabuhanga rigezweho ryo kumenya, rikungukira ku gukura neza kw'urwego ku rundi ndetse n'ubuziranenge butangwa n'ubu buryo.

Ibice bya ZnGa2O4 byatewe na MOCVD bifite akamaro kanini ku bikoresho bipima umwuka bita NO gaz. Ubushakashatsi bwagaragaje ko gutunganya ubuso bwa plasma byongera cyane imikorere yabyo. Ibi bituma habaho izamuka ryikubye inshuro 8 mu gusubiza sensor kuri 5 ppm gaz zita NO gaz, bikagera kuri1276.1%Iyi sensor yakozwe neza yanageze ku rugero rwo hasi rwo kubona 2.4 ppb, bigaragaza ko ubuhanga bwayo bufite akamaro mu gukora sensor za gaze zikora neza cyane.

Byongeye kandi,indium oxide nanowires na In2O3 thin filmsYakuze muri ubu buryo igaragaza ubushobozi bwo guhitamo neza kuri NO2. Ibi bikoresho bigaragaza ko hari uburyo budahagije bwo gutandukanya indi myuka, bigaragaza ko ubushobozi bwo guhitamo bwazamutse. Ikirahuri cya ZnGa2O4 (ZGO) cyakuze na MOCVD cyagaragaje ubushobozi bwo kumenya NO kuri 300 °C. Sensor ya ZGO yagaragaje ubushobozi bwo kumenya NO1.88Iyo yahuye na NO ya 125 ppb. Yagaragaje ubushobozi bwo kumva NO cyane mu gihe yahuraga na CO2, CO, na SO2, bigaragaza ko yahisemo neza. Sensor ya ZGO nayo yagaragaje uburyo bwo kumva NO cyane ugereranije na NO2. Inyigo z’amahame ya mbere zemeje ko uburyo sensor ya gaze ya ZGO yakira NO cyane bitewe n’impinduka zikomeye mu mikorere y’akazi iyo molekyuli ya NO ishyizwe ku buso bwa filime nto.

MOCVD yo gukoresha ingufu zisubira no gushakisha

Gushyira umwuka w'ubushyuhe mu byuma bikomoka ku bimera (Metal-Organic Chemical Vapour)MOCVD) bifasha cyane mu iterambere ry’ikoranabuhanga mu ngufu zisubiramo n’uburyo bugezweho bwo gushakisha. Ubu buryo butuma habaho ibikoresho bikora neza cyane ku tunyangingo tw’izuba dukora neza ndetse n’ibikoresho bipima urumuri.

MOCVD mu tunyangingo tw'izuba twinshi

MOCVD ningombwa mu gukora panneaux solaires zikoresha imirasire y'izuba zikora neza cyane. Bituma habaho semiconductors zigizwe n'ibice bifite igipimo cyo guhindura ingufu. Iri koranabuhanga ni ingenzi cyane mu gutanga ingufu nyinshi zikomoka ku zuba, rijyanye n'ingufu zikomoka ku mirasire y'izuba ku isi hose. Abashakashatsi bakunze gukoraIbikoresho bya GaInP/GaInAs/Geikoresha MOCVD mu gukora uturemangingo tw’izuba twinshi dukora neza cyane. Izi nyubako zikomeye zituma imirasire y’izuba irushaho kwinjiza urumuri mu bice bitandukanye bya spectrum y’izuba.

Urugero, selile y'izuba ifite imiyoboro itanu ya III-V, yakozwe hakoreshejwe MOCVD, yageze ku musaruro wo guhindura ingufu z'amashanyarazi35.1%Iki gikoresho gifite uburebure bwa cm² 12 cyari gifite imiterere ya AlGaInP-AlGaAs-GaAs-InGaAs-InGaAs. Buri kagari kari gafite ingufu zihariye zo gufata urumuri, bigatuma urumuri rufatwa neza. Ubu bushobozi bwo gushyiramo ibice neza butuma MOCVD iba ingenzi cyane mu gusunika imipaka y'ingufu zikomoka ku mirasire y'izuba.

MOCVD ku bikoresho bipima amashusho neza

MOCVD kandi igira uruhare runini mu gukora ibikoresho bipima urumuri neza. Ibi bikoresho bihindura urumuri mo ibimenyetso by'amashanyarazi, bigakoresha mu itumanaho, gufata amashusho no kumva. Ubu buryo butuma habaho kugenzura neza imiterere y'ibikoresho n'ubugari bw'urwego, ibyo bikaba bigira ingaruka ku mikorere y'ibikoresho bipima urumuri.

MOCVD yoroshya ikura rya InGaAs PIN photodetector membranes kuri substrates za InP. Abahanga mu by'imashini bashobora kunoza uburyo InGaAs photodetector's spectral sensitivity ku burebure bw'urumuri mu ntera yagutse (0.4 μm-3.6 μm). Uku kunoza ibintu bibaho binyuze mu kugenzura neza imiterere y'ibikoresho, nka In0.53Ga0.47As, ifite umupaka wa 0.74 eV kandi ikubiyemo uburebure bw'urumuri rw'ingenzi. MOCVD yemerera gushyira neza ibice bitandukanye, harimo InP yo mu bwoko bwa p na n, hamwe n'ibice byinshi bya InGaAs bifite ubunini bwihariye (urugero, urwego rwo kwinjiza InGaAs rwa 2.2 μm rutarashyirwamo). Ibi bice ni ingenzi mu kugaragaza uburyo icyuma gipima urumuri gitanga amakuru.

Byongeye kandi, MOCVD ituma habaho iterambere ryaFilime za (In1-xAlx) 2O3 zifite agace gashoboka ko guhindurwaku bice bya MgO. Uburyo bwo gutandukanya intera, buterwa n'imiterere y'ibinyabutabire n'ubushyuhe bw'ikura, butuma hatabaho gukora ibikoresho bipima imiterere y'amashusho bifata imiterere yihariye ya spectral. Ubu buryo bunoze bugera no ku muvuduko w'impinduka. Ibikoresho bipima imiterere y'amashusho bikoresha filime za Ga2O3 zatewe na MOCVD byagaragaje umuvuduko w'impindukabirenga amasegonda 0.1By’umwihariko, Schottky barrier photodiodes ishingiye kuri Ga2O3 kuri mica yagaragaje ubu buryo bwihuse bwo gusubiza, bigaragaza ubushobozi bw’ikoranabuhanga bwo kumenya vuba cyane.

Uburyo bwo gukora neza no guhindura ibintu mu buryo butandukanye bwa MOCVD

Gushyira umwuka mu byuma biva mu mwuka bitanga inyungu zidasanzwe mu gukora ibikoresho bya semiconductor. Ubuhanga bwayo n'ubushobozi bwayo bwo gukora ibintu bitandukanye bituma iba ingenzi mu gukora ibikoresho bya elegitoroniki bigezweho na optoelectronic. Iri koranabuhanga rituma habahokugenzura ku buryo budasanzwe imiterere y'ibikoresho n'imiterere y'urwego.

Uruhare rwa MOCVD mu Guhindura Ibintu mu buryo Butandukanye

Ubu buryo bwo gushyiramo ibintu bugaragazaubuhanga butangaje mu bikoreshoIshyiramo ibikoresho byinshi bitandukanye. Ibi birimoIbikoresho bya II-VI, ibikoresho bya III-V, hamwe na filime ntoya zikora kristale zifite isuku nyinshi. Ikora kandi micro/nanostructures, 0D, 1D, na 2D nanomaterials. By'umwihariko, irarusha izindi zose hamweImashini za semiconductor za III-V, bikubiyemo ibintu by'icyuma nka gallium na indium, hamwe n'ibintu byo mu itsinda rya V nka arsenic na fosifore.Imiterere ya GaAsnaIbikoresho bishingiye kuri GaN by'amatara ya LED n'ibikoresho by'ikoranabuhangani porogaramu zisanzwe.

Ubu ni uburyo bukoreshwa mu buryo butandukanye cyane. Bushyiramo semiconductors, nitrides, na oxydes binyuze mu buryo butandukanye bwa shimi. Ubusanzwe bukundwa cyane ku bikoresho bya fosfide (P). Ku bikoresho bishingiye kuri arsenide, ubu buryo na MBE bifite ubushobozi bumwe. Ariko,MBE ni bwo buryo bwiza bwo gukura kw'ibintu bya antimonide (Sb)no ku miterere iteye imbere cyane nka dots za quantum.

MOCVD yo kugenzura neza urwego rw'ibyiciro

Ubu buryo butuma habaho gukura kw'imiterere y'uturemangingo duto duto hamweubuziranenge bw'urwego rwa atome. Abahanga mu by’imashini bakora ihindagurika ry’atome hagati y’ibice by’ingufu. Ibi bibaho binyuze mu guhindura gusa imyuka ibanziriza iyinjira muri reactor. Iri genzura ni ingenzi mu guhindura imiterere y’ikoranabuhanga n’iy’urumuri by’ibikoresho bya semiconductor bifite ibice byinshi by’ingufu. Iyi gahunda ifatwa nk’ 'inyubako y’urwego rwa atome'. Ibice by’ingufu zito cyane, zubakwa na atome. Ubu buryo bugenzurwa cyane bufasha gukura kwa epitaxial. Atome zitondeka mu buryo buhanitse, zigashushanya imiterere ya kristu iri munsi ya wafer. Ibi bituma imiterere ya kristu ikomeza ku rwego rumwe.

Uburyo MOCVD yakura mu gukora

Iyi sisitemu kandi itanga ubushobozi bwo kwagura umusaruro mwinshi. Imashini zikora amashanyarazi mu nganda zishobora kwakira abantu benshiuduce duto twa waferUrugero, ibikoresho by'ingufu bya 'Planetary Reactors',wafers zigera kuri mm 200 (hafi santimetero 8)Ibi bishyigikira inganda zihendutse kandi zikora ingano nyinshi. GaN Planetary Reactor yo mu gisekuru cya gatanu yakuze epiwafer umunani za santimetero 6 mu gihe kimwe.

• Udupaki twa santimetero 4zikoreshwa cyane mu kuringaniza ikiguzi n'ingano mu musaruro mwinshi.
• Udupira twa santimetero 6 turimo gukururwa no gukorwa mu buryo bwinshi, nubwo hari ibibazo bya tekiniki.

MOCVD ni ingenzi cyane mu gukora ibikoresho byinshi bigezweho bya elegitoroniki na optoelectronic. Ubushobozi bwayo bwihariye mu gukora neza no gukoresha ibikoresho bitandukanye butuma habaho udushya mu nganda nyinshi zikora ikoranabuhanga rihanitse. Iri koranabuhanga rituma habaho imiterere y’ibikoresho bya semiconductor igoye kandi igenzurwa neza cyane. MOCVD ikomeje kuba ikoranabuhanga ry’ingenzi, rituma habaho iterambere mu by’amatara, itumanaho, mudasobwa, n’ingufu zishobora kuvugururwa. Ihora itera imbere mu bumenyi bw’ibikoresho bugezweho.