Kodi MOCVD imagwiritsidwa ntchito pa chiyani?

MOCVD imagwiritsidwa ntchito makamaka popanga mafilimu opyapyala a semiconductor. Mafilimu awa ndi ofunikira pazida zamakono zamagetsi ndi zamagetsi. Msika wa ukadaulo wa MOCVD ukuwonetsa kukula kwamphamvu. Akatswiri akuyerekeza mtengo wake pamsika paMadola a ku America 1.1 biliyoni mu 2023Akuneneratu kuti ndalama zomwe amapeza zidzafika pa USD 2.8 biliyoni pofika chaka cha 2033, zomwe zikusonyeza kuti CAGR idzakhala ndi 9.7%. Kukula kwakukulu kumeneku kukuwonetsa udindo wofunikira wa MOCVD pakukula kwa ukadaulo.

Mfundo Zofunika Kwambiri

• MOCVDamalima mafilimu opyapyala a semiconductor. Mafilimu awa ndi ofunikira pazida zambiri zamagetsi.
• MOCVD imathandiza kupanga zipangizo zamakono. Izi zikuphatikizapo ma LED, ma laser diode, ndi magetsi amphamvu.
• MOCVD ndi yabwino kwambiri pakugwiritsa ntchito mphamvu zongowonjezwdwa. Imathandiza kupanga maselo abwino a dzuwa ndi masensa a kuwala.
• MOCVD imapereka ulamuliro wabwino kwambiri. Imamanga zigawo ndi kulondola kwa atomiki kuti chipangizo chigwire ntchito bwino.
• MOCVD imatha kupanga zipangizo zambiri nthawi imodzi. Izi zimapangitsa kuti ikhale yabwino kwambiri popanga zinthu zambiri.

MOCVD ya Zipangizo Zapamwamba za Optoelectronic

Kutulutsa nthunzi ya mankhwala achitsulo ndi zachilengedwe (MOCVD)Imagwira ntchito yofunika kwambiri popanga zipangizo zamakono zamagetsi. Ukadaulo uwu umathandiza kukula bwino kwa mafilimu opyapyala a semiconductor, omwe ndi ofunikira kwambiri pakugwira ntchito kwa ma diode amakono otulutsa kuwala, ma diode a laser, ndi ma emitter a infrared.

MOCVD mu Kupanga Ma LED

Njira yosungiramo kuwala imeneyi ndi yofunika kwambiri popanga ma LED omwe amagwira ntchito bwino kwambiri. Imathandizira kukula kwa zinthu zofunika kwambiri mongaGallium Nitride (GaN), Gallium Arsenide (GaAs), ndi Indium Phosphide (InP), pamodzi ndimankhwala a arsenide/phosphide (As/P)Zipangizo zimenezi zimapanga maziko a kuwala kothandiza. Mwachitsanzo,Ma LED a InGaN okhala ndi ma quantum-wells ambiri opangidwa ndi violet a 407 nmamapangidwa pogwiritsa ntchito njira iyi. Zipangizozi nthawi zambiri zimakhala ndi gawo losasinthika la GaN current spreading layer ndi zotchinga za AlGaN zokhala ndi aluminiyamu yambiri. Kapangidwe kameneka kamathandizira kuti kuwala kutuluke bwino mwa kuchepetsa kuchuluka kwa mphamvu yopangira jekeseni.Zitsime za InGaN/GaN zambiri (MQWs)ikuyimira kapangidwe ka zinthu zomwe zimagwiritsidwa ntchito popanga kuwala kwa LED. Kukula pogwiritsa ntchito njira imeneyi kumathandizira kwambirikufanana ndi kufalikira kwa mafilimu opyapyala awa a atomiki, zomwe zimakhudza mwachindunji kapangidwe ka zinthu za 2D pazida zamagetsi zogwira ntchito kwambiri.InGaN LED yofiira, yomwe imatulutsa mphamvu ya 625 nm, inapeza mphamvu ya quantum efficiency (EQE) ya 10.5%kudzera mu njira yovuta ya epitaxial yokhudza zigawo za superlattice zomangidwa pamodzi ndi kulimbitsa mphamvu.

MOCVD ya Laser Diodes

Ma laser diode, omwe ndi zinthu zofunika kwambiri pakulankhulana kwa kuwala ndi kusungira deta, amadalira kwambiri ukadaulo uwu. Njira iyi imalola kukula kwa mafilimu apamwamba a epitaxial pogwiritsa ntchito makina monga Gallium Arsenide (GaAs), Gallium Nitride (GaN), ndi Indium Phosphide (InP). Njira zokulira zimathandiza pakukula kwama diode a laser owoneka bwino ochokera ku ma alloy a III-V monga InGaPAs ndi InGaAlPKomanso,Ma diode a laser a InAs/GaAs omwe amakula pogwiritsa ntchito ukadaulo uwu amatulutsa kuwala kwa O-band, makamaka pa 1.3 µm.Kulondola kwa njira yoyika zinthu kumathandiza kwambiri kuti zipangizozi zikhale zodalirika komanso zokhalitsa. Mwachitsanzo, zathandiza kwambiri pakukula kwa mafilimu apamwamba a epitaxial a ZnSe-based laser diodes, zomwe zapangitsa kuti pakhale kusintha kwakukulu mu ntchito zawo.nthawi yonse ya moyo, kufika maola pafupifupi 500 pa 20°C pansi pa ntchito ya mafunde osalekezaOfufuza amagwiritsanso ntchito njira imeneyi kuti akuleMa laser a InGaAs-AlGaAs single quantum well omwe ali ndi mphamvu yotakata kwambiri omwe amagwira ntchito pafupifupi 975nm, zomwe zimathandiza kumvetsetsa njira zochepetsera kuwonongeka.

MOCVD mu ma infrared Emitters

Njira yoyika zinthu iyi ndi yofunika kwambiri popanga ma emitter apamwamba a infrared, omwe amapeza ntchito pozindikira, kujambula, ndi kulumikizana. Njirayi imalola kuyika bwino zinthu zovuta. Mwachitsanzo, ma laser apakati a infrared amalimidwa pogwiritsa ntchito njirayi. Zipangizo zamakonozi zimaphatikizapo ma claddings a AlAsSb, madera ogwira ntchito a InAsSb opanikizika, ndi madera ambiri ogwira ntchito a InAsSb/InAsP quantum. Amakhalanso ndi zigawo za GaAsSb/InAs za semi-metal, zomwe zimagwira ntchito ngati magwero amkati a ma electron a ma laser a injection a multi-stage, ndipo AlAsSb imagwira ntchito ngati gawo losungira ma electron. Mapangidwe awa akuyimirazipangizo zoyamba zamagawo ambiri zomwe zakula pogwiritsa ntchito njira iyi, kuwonetsa luso la ukadaulowu popanga zinthu zapadera kwambiri za infrared. Kutha kuwongolera kufanana ndi kufalikira kwa mafilimu opangidwa ndikofunikira kwambiri pakugwira ntchito kwa zipangizo zamakono za infrared izi.

MOCVD mu Zamagetsi Zapamwamba

Kutulutsa nthunzi ya mankhwala achitsulo ndi zachilengedwe (MOCVD)ndi ukadaulo wofunikira kwambiri popanga zipangizo zamagetsi zogwira ntchito bwino. Njira imeneyi imalola kukula kolondola kwa zigawo za semiconductor zofunika kwambiri pa zamagetsi amphamvu, ma transistors amphamvu kwambiri, ndi masensa apamwamba.

MOCVD ya Zamagetsi Zamagetsi

Zipangizo zamagetsi zamagetsi zimafuna zipangizo zomwe zimatha kugwira ntchito ndi mphamvu zambiri komanso kutentha kwambiri. MOCVD ndi yofunika kwambiri popanga zipangizo monga Gallium Nitride (GaN) ndi Silicon Carbide (SiC), zomwe zili ndikutentha kwapamwamba kwambiri komanso mphamvu yamagetsi yotsika kwambiriMakhalidwe amenewa ndi ofunikira kwambiri pamakina amagetsi amakono.Ma semiconductors a Wide-bandgap monga SiC ndi GaNndi oyenera kwambiri malo amphamvu kwambiri. Zipangizozi zimakhala ndi mphamvu zambiri, mphamvu, ndi kutentha m'malo awa. Mwachitsanzo, ma diode a GaN, opangidwa ndi malo otsetsereka omwe amakula mu MOCVD, awonetsa kuti ma voltage owonongeka amapitirira1.3 kVZipangizo khumi ndi ziwiri zochokera ku wafer imodzi zinasonyeza luso limeneli, kufika pafupifupi 90 peresenti ya malire a chiphunzitso cha parallel-plane.

MOCVD imapangitsa kukula kwazigawo zapamwamba kwambiri za epitaxial za kristalo imodzi pa SiC substrates zokhala ndi kachulukidwe kochepaIzi ndizofunikira kwambiri pa ma semiconductor amphamvu. Njirayi imapereka ulamuliro wolondola pa makulidwe, kuchuluka kwa doping, ndi kufanana kwa zigawo za epitaxial. Zinthu izi zimapangitsa kuti magetsi azikhala ofunikira pazida zamagetsi zovuta. Kuphatikiza apo, MOCVD ndi yoyenera kupanga zinthu zazikulu. Imalola kukula kwa zigawo za epitaxial pazida zazing'ono komanso zazikulu, zomwe zimapangitsa kuti zida zochokera ku SiC zikhale zotsika mtengo kuti zigwiritsidwe ntchito kwambiri. Zipangizo za semiconductor za III-nitride, kuphatikizaGaN, AlGaN, InGaN, AlN, ndi InAlN, amalimidwa kudzera mu njira iyi kuti agwiritsidwe ntchito bwino kwambiri mu zamagetsi zamagetsi, ma photonics, ndi ukadaulo wamagetsi oyera. Zipangizozi ndizofunikira kwambiri pazida monga ma transistors amphamvu othamanga kwambiri (HEMTs), ma LED owoneka ndi UV, ndi ma laser diode.

MOCVD mu ma Transistors a High-Frequency

Ma transistors amphamvu kwambiri, ofunikira kwambiri pamakina apamwamba olumikizirana, amapindulanso kwambiri ndi MOCVD. Njirayi imathandizira kukula kwa makina opangidwa ndi InP pazida monga High Electron Mobility Transistors (HEMTs), Heterojunction Bipolar Transistors (HBTs), PIN, Mixer, ndi Multiplier diodesMwachitsanzo, ofufuza amapanga AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) pa GaN ya mainchesi 4 pa SiC substrates. Wafer ya epitaxial, yomwe imakula ndi MOCVD, imakhala ndi gawo la i-GaN buffer, gawo la GaN channel la 0.9 μm lopangidwa mwangozi, gawo la 25 nm Al0.25Ga0.75N barrier, ndi gawo la 2 nm GaN cap. Kuyeza kwa Hall pa kutentha kwa chipinda kunawonetsa kuyenda kwa ma elekitironi kwa1500 cm²/V·s, kukana kwa pepala la 280 Ω/sq, ndi kuchuluka kwa pepala lonyamula pepala la 1 × 10¹³/cm².

Kukonza mapangidwe a ohmic etching (OEPs) a mapulogalamu a Ka-band kumawonjezera magwiridwe antchito. Mapangidwe a mzere wa 1 μm OEP adawonetsa zotsatira zabwino kwambiri poyerekeza ndi mapangidwe ena.

Kapangidwe kabwino ka OEP, pamodzi ndi zigawo za epitaxial zomwe zimamera ku MOCVD, zimapangitsa kuti ma radio frequency ayende bwino. Izi zimatheka pochepetsa kukana kulowa ndi kuwonjezera malo olumikizirana.

MOCVD ya Masensa Apamwamba

Masensa apamwamba amadalira zigawo za semiconductor zopangidwa bwino kuti zikhale ndi mphamvu yowonjezereka komanso kusankha bwino.Ma dichalcogenides a 2D transition metal (TMDs) monga molybdenum disulfide (MoS2)ndikofunikira kwambiri pazida zamagetsi za m'badwo wotsatira. Ntchitozi nthawi zambiri zimaphatikizapo ukadaulo wapamwamba wowunikira, kupindula ndi kukula kolondola kwa gawo ndi gawo komanso kupangika kwapamwamba komwe kuperekedwa ndi njira iyi.

ZnGa2O4 zomwe zimamera mu MOCVD ndizothandiza kwambiri pa masensa a NO gas. Kafukufuku wasonyeza kuti kuchiza pamwamba pa plasma kumawonjezera kwambiri magwiridwe antchito awo. Izi zimapangitsa kuti masensa ayankhe bwino kasanu ndi kawiri pa kuchuluka kwa mpweya wa NO 5 ppm, zomwe zimafika pa1276.1%Sensa yokonzedwa bwino iyi idapezanso malire ochepa ozindikira a 2.4 ppb, zomwe zikuwonetsa kuti njira yogwiritsira ntchito bwino ntchitoyi popanga masensa a NO gas omwe amagwira ntchito bwino kwambiri.

Komanso,ma nanowaya a indium oxide ndi mafilimu opyapyala a In2O3Kuchuluka kwa mpweya pogwiritsa ntchito njira imeneyi kumasonyeza kusankha bwino kwa NO2. Zipangizozi sizimasokoneza kwambiri mpweya wina, zomwe zikusonyeza kusankha bwino. Epilayer ya ZnGa2O4 (ZGO) yomwe imamera ndi MOCVD inasonyeza kuthekera kwakukulu kozindikira NO pa 300 °C. Sensa ya ZGO inasonyeza kuthekera kwa1.88Pamene idawonetsedwa ku 125 ppb NO. Inawonetsa kukhudzidwa kwakukulu ndi NO pomwe sinali kuchitapo kanthu ndi CO2, CO, ndi SO2, zomwe zikusonyeza kusankha bwino. Sensa ya ZGO idawonetsanso kuyankha kwakukulu kwa NO poyerekeza ndi NO2. Ma simulations oyamba adatsimikizira kuti kuyankha kwamphamvu kwa sensa ya gasi ya ZGO ku NO kumachitika chifukwa cha kusintha kwakukulu kwa ntchito pakumwa kwa molekyulu ya NO pamwamba pa filimu yopyapyala.

MOCVD ya Mphamvu Zongowonjezedwanso ndi Kuzindikira

Kutulutsa nthunzi ya mankhwala achitsulo ndi zachilengedwe (MOCVD() zimathandiza kwambiri pakupita patsogolo kwa ukadaulo wa mphamvu zongowonjezwdwanso komanso njira zamakono zopezera zinthu. Njira imeneyi imalola kupanga zinthu zogwira ntchito bwino kwambiri zomwe ndizofunikira kwambiri pa maselo a dzuwa ogwira ntchito bwino komanso zida zowunikira zithunzi.

MOCVD mu Maselo a Dzuwa Olumikizana Kwambiri

MOCVD ndizofunika kwambiri popanga ma solar panels ogwira ntchito bwino kwambiri. Zimathandiza kupanga ma semiconductors okhala ndi mphamvu zambiri zomwe zimasinthasintha mphamvu. Ukadaulo uwu ndi wofunikira kwambiri popanga mphamvu zambiri kuchokera ku dzuwa, mogwirizana ndi kugogomezera kwapadziko lonse lapansi pa mphamvu zongowonjezwdwanso. Ofufuza nthawi zambiri amapanga zinthu zatsopano.Zipangizo za GaInP/GaInAs/Gepogwiritsa ntchito MOCVD popanga maselo a dzuwa olumikizana kwambiri omwe amagwira ntchito bwino kwambiri. Mapangidwe ovutawa amathandiza kuti kuwala kwa dzuwa kulowe m'malo osiyanasiyana a solar spectrum.

Mwachitsanzo, selo la dzuwa la III-V lokhala ndi majunction asanu, lopangidwa pogwiritsa ntchito MOCVD, linapeza mphamvu yosinthira mphamvu ya35.1%Chipangizochi cha 12 cm² chinali ndi kapangidwe ka AlGaInP-AlGaAs-GaAs-InGaAs-InGaAs. Kachidutswa kalikonse kanali ndi mphamvu zapadera za bandgap, zomwe zimathandiza kuti kuwala kugwire bwino ntchito. Mphamvu yolondola yogawa zigawo imapangitsa MOCVD kukhala yofunika kwambiri popititsa patsogolo mphamvu ya dzuwa.

MOCVD ya Zowunikira Zithunzi Zogwira Mtima

MOCVD imagwiranso ntchito yofunika kwambiri popanga zida zowunikira zithunzi zogwira mtima. Zipangizozi zimasintha kuwala kukhala zizindikiro zamagetsi, zomwe zimapeza ntchito polankhulana, kujambula zithunzi, ndi kuzindikira. Njirayi imalola kuwongolera bwino kapangidwe ka zinthu ndi makulidwe a zigawo, zomwe zimakhudza mwachindunji magwiridwe antchito a chida chowunikira zithunzi.

MOCVD imathandizira kukula kwa ma nembanemba a InGaAs PIN photodetector pa ma substrates a InP. Mainjiniya amatha kukonza mphamvu ya InGaAs photodetector's spectral sensitivity ya mafunde mkati mwa mitundu yosiyanasiyana (0.4 μm-3.6 μm). Kukonza kumeneku kumachitika mwa kuwongolera bwino kapangidwe ka zinthu, monga In0.53Ga0.47As, yomwe ili ndi bandgap ya 0.74 eV ndipo imaphimba mafunde ofunikira olumikizirana. MOCVD imalola kuyika bwino zigawo zosiyanasiyana, kuphatikiza p- ndi n-type InP, ndi zigawo zingapo za InGaAs zokhala ndi makulidwe enaake (monga, gawo losanjikiza la 2.2 μm lopanda InGaAs). Zigawo izi ndizofunikira kwambiri pofotokoza momwe chithunzi cha photodetector chimayankhira.

Kuphatikiza apo, MOCVD imapangitsa kukula kwaMakanema a (In1-xAlx)2O3 okhala ndi bandgap yosinthikapa ma substrates a MgO. Kusintha kwa bandgap, komwe kumakhudzidwa ndi kapangidwe ka mankhwala ndi kutentha kwa kukula, kumathandiza mwachindunji kupanga ma photodetector omwe amazindikira mitundu inayake ya ma spectral. Kulondola kumeneku kumakhudzanso liwiro la mayankho. Ma photodetector omwe amagwiritsa ntchito mafilimu a Ga2O3 opangidwa ndi MOCVD awonetsa liwiro la mayankho.kuposa masekondi 0.1Makamaka, ma photodiode a Schottky barrier ozikidwa pa Ga2O3 pa mica adawonetsa kuyankha mwachangu kumeneku, kuwonetsa kuthekera kwa ukadaulo kuzindikira mwachangu kwambiri.

Kulondola ndi Kusinthasintha kwa MOCVD

Kutulutsa nthunzi ya mankhwala achitsulo ndi zachilengedwe kumapereka ubwino wapadera popanga zinthu za semiconductor. Kulondola kwake komanso kusinthasintha kwake kumapangitsa kuti ikhale yofunika kwambiri popanga zipangizo zamakono zamagetsi ndi zamagetsi. Ukadaulo uwu umalola kuti zinthu ziyende bwino.Kulamulira kwapadera pa katundu wa zinthu ndi kapangidwe ka zigawo.

Udindo wa MOCVD pa Kusinthasintha kwa Zinthu

Njira yodziwira izi ikuwonetsakusinthasintha kwakukulu kwa zinthuImasunga zinthu zosiyanasiyana. Izi zikuphatikizapoZipangizo za II-VI, Zipangizo za III-V, ndi mafilimu opyapyala a semiconducting thin omwe ndi oyera kwambiri. Amapanganso ma micro/nanostructures, 0D, 1D, ndi 2D nanomaterials. Makamaka, imagwira ntchito bwino ndiMiyezo ya semiconductor ya III-V, kuphatikizapo zinthu zachitsulo monga gallium ndi indium, ndi zinthu za gulu V monga arsenic ndi phosphorous.Mapangidwe a GaAsndiZipangizo zochokera ku GaN za ma LED ndi zipangizo zamagetsindi ntchito zofala.

Iyi ndi njira yosinthasintha kwambiri. Imayika ma semiconductor a compound, nitrides, ndi oxides pogwiritsa ntchito mankhwala osiyanasiyana a precursor chemistry. Nthawi zambiri imakondedwa ndi zinthu za phosphide (P). Pazinthu zopangidwa ndi arsenide, njira iyi ndi MBE zili ndi mphamvu zofanana. Komabe,MBE ndiyo njira yabwino kwambiri yopangira zinthu za antimonide (Sb) kukulandi zomangamanga zapamwamba kwambiri monga madontho a quantum.

MOCVD Yowongolera Magawo Molondola

Njirayi imalola kukula kwa ma heterostructure ovuta okhala ndikulondola kwa mulingo wa atomuMainjiniya amapanga kusintha kwakuthwa kwa atomu pakati pa zigawo. Izi zimachitika pongosintha mpweya woyambira womwe umalowa mu reactor. Kuwongolera kumeneku ndikofunikira kwambiri posintha mawonekedwe amagetsi ndi kuwala kwa zida za semiconductor zokhala ndi zigawo zambiri. Njirayi imaonedwa ngati 'kumanga kwa atomu'. Zigawo zopyapyala kwambiri, zamakristalo zimapangidwa ndi atomu ndi atomu. Njira yolamulidwa kwambiri iyi imathandizira kukula kwa epitaxial. Maatomu amakonzedwa okha mwanjira yolongosoka kwambiri, kuwonetsa kapangidwe ka kristalo ka pansi pa wafer. Izi zimatsimikizira kupitiliza kwa kapangidwe ka kristalo ka gawo ndi gawo.

Kuchuluka kwa MOCVD pa Kupanga

Dongosololi limaperekanso kuthekera kwakukulu kokulirapo kuti pakhale kupanga kwakukulu. Ma reactor a mafakitale amatha kukhala ndi mitundu yosiyanasiyana ya magetsima waferMwachitsanzo, Planetary Reactors, chogwirirama wafers mpaka 200 mm (pafupifupi mainchesi 8)Izi zimathandiza kupanga zinthu zotsika mtengo komanso zokwera mtengo. GaN Planetary Reactor ya m'badwo wachisanu inapanga ma epiwafer asanu ndi atatu a mainchesi 6 kamodzi kokha.

• Ma wafer a mainchesi 4amagwiritsidwa ntchito kwambiri pokonza mtengo ndi kuchuluka kwa zinthu zomwe zimagwiritsidwa ntchito popanga zinthu zambiri.
• Ma wafer a mainchesi 6 akutchuka kwambiri popanga zinthu zambiri, ngakhale kuti pali zovuta zina zaukadaulo.

MOCVD ndi yofunika kwambiri popanga zipangizo zamakono zamagetsi ndi zamagetsi. Mphamvu zake zapadera zolondola komanso kusinthasintha kwa zinthu zimayendetsa luso m'mafakitale ambiri apamwamba. Ukadaulo uwu umathandiza kupanga mapangidwe ovuta a semiconductor okhala ndi ulamuliro wapadera. MOCVD ikupitilirabe ngati ukadaulo wapangodya, zomwe zimathandiza kupita patsogolo mu kuunikira, kulumikizana, makompyuta, ndi mphamvu zongowonjezwdwanso. Imakankhira nthawi zonse malire a zomwe zingatheke mu sayansi yapamwamba ya zinthu.