MOCVD inoshandiswa pai?

MOCVD inonyanya kushandiswa pakurima mafirimu matete e semiconductor. Mafirimu aya akakosha pamidziyo yepamusoro yemagetsi uye ye optoelectronic. Musika wetekinoroji yeMOCVD unoratidza kukura kwakasimba. Nyanzvi dzinofungidzira kukosha kwayo pamusika pa1.1 bhiriyoni yemadhora muna 2023Vanofungidzira kuti mari inowanikwa ichasvika mabhiriyoni maviri nehafu emadhora ($2.8 bhiriyoni) panosvika gore ra2033, zvichiratidza kuti huwandu hwekuwedzera kwegore negore (CAGR) huchakwira ne9.7%. Kuwedzera uku kwakakosha kunoratidza basa guru reMOCVD mukufambira mberi kwetekinoroji.

Zvinhu Zvinokosha Zvaunofanira Kuziva

• MOCVDinokura mafirimu matete e semiconductor. Mafirimu aya akakosha kumidziyo yakawanda yemagetsi.
• MOCVD inobatsira kugadzira michina yepamusoro. Izvi zvinosanganisira ma LED, ma laser diode, uye magetsi emagetsi.
• MOCVD yakanaka pakushandisa simba rinogona kushandiswazve. Inobatsira kugadzira masero ezuva uye masensa echiedza ari nani.
• MOCVD inopa kutonga kwakanaka. Inovaka zvikamu zvine maatomu chaiwo kuti mudziyo ushande zvakanaka.
• MOCVD inogona kugadzira michina yakawanda panguva imwe chete. Izvi zvinoita kuti ive yakanaka pakugadzirwa kukuru.

MOCVD yeZvishandiso zveOptoelectronic Zvepamusoro

Kubviswa kweMvura yeMetal-Organic Chemical Vapour (MOCVD)inoita basa guru mukugadzirwa kwemidziyo yepamusoro ye optoelectronic. Iyi tekinoroji inogonesa kukura kwakanyatsojeka kwemafirimu matete e semiconductor, ayo akakosha pakushanda kwemadiode emazuva ano echiedza, madiode e laser, uye ma emitters e infrared.

MOCVD mukugadzira LED

Nzira iyi yekuisa chiedza inokosha pakugadzira maLED ane simba guru. Inobatsira kukura kwemasisitimu ezvinhu zvakakosha zvakaita seGallium Nitride (GaN), Gallium Arsenide (GaAs), uye Indium Phosphide (InP), pamwe namishonga ye arsenide/phosphide (As/P)Zvinhu izvi zvinoumba hwaro hwekuburitsa chiedza zvinobudirira. Semuenzaniso,ma LED eInGaN akawanda-quantum-wells anoshanda zvakanyanya e407 nm violetzvinogadzirwa uchishandisa nzira iyi. Midziyo iyi inowanzo sanganisira GaN current spreading layer isina doped uye AlGaN barriers ine aluminium yakawanda. Dhizaini iyi inovandudza kushanda kwechiedza nekuderedza kuwanda kweinjection current.Matsime eInGaN/GaN akawanda (MQWs)inomiririra chimiro chezvinhu zvakajairika zvekugadzira LED ine kupenya kwakanyanya. Kukura uchishandisa nzira iyi kunovandudza zvakanyanyakufanana uye kufukidzwa kwemafirimu aya matete eatomu, izvo zvinokanganisa zvakananga kugadzirwa kwezvinhu zve2D zvemidziyo yemagetsi inoshanda zvakanyanya.InGaN LED tsvuku, inoburitsa 625 nm, yakawana rekodhi yekushanda kwekunze kwequantum (EQE) ye10.5%kuburikidza nemaitiro akaomarara epitaxial anosanganisira stacked superlattice layers uye strain compensation.

MOCVD yeLaser Diodes

MaLaser diode, zvinhu zvakakosha mukukurukurirana kwemaziso uye kuchengetedza data, anonyanya kushandisa tekinoroji iyi. Nzira iyi inobvumira kukura kwemafirimu epitaxial emhando yepamusoro achishandisa masisitimu ezvinhu zvakaita seGallium Arsenide (GaAs), Gallium Nitride (GaN), uye Indium Phosphide (InP). Matekiniki ekukura anobatsira kukura kwema diode e laser anooneka kubva kuIII-V alloys akadai seInGaPAs neInGaAlPUyezve,Madiode eInAs/GaAs equantum dot laser anogadzirwa netekinoroji iyi anoburitsa chiedza cheO-band, kunyanya pa1.3 µm.Kunyatsorongeka kwemaitiro ekuisa zvinhu izvi kunobatsira zvikuru pakuvimbika uye hupenyu hwemidziyo iyi. Semuenzaniso, zvave zvichibatsira mukukura kwemafirimu epitaxial emhando yepamusoro eZnSe-based laser diodes, zvichikonzera kuvandudzika kukuru mumabasa avo.hupenyu hwese, kusvika maawa angangoita 500 pa20°C pasi pekushanda kwemafungu nguva dzoseVaongorori vanoshandisawo nzira iyi kukuramaInGaAs-AlGaAs single quantum well lasers ane strained munzvimbo yakakura anoshanda pa975nm, izvo zvinobatsira mukunzwisisa nzira dzekudzikira kwesimba.

MOCVD muInfrared Emitters

Nzira iyi yekuisa zvinhu yakakoshawo pakugadzira maemitter e infrared epamusoro, ayo anowana mashandisirwo mukuona, kufungidzira, uye kutaurirana. Nzira iyi inobvumira kuisa zvinhu zvakaoma. Semuenzaniso, ma laser epakati pe infrared anorimwa achishandisa nzira iyi. Midziyo iyi yakaoma inosanganisira AlAsSb claddings, InAsSb active regions dzakamanikidzwa, uye multi-stage, type I InAsSb/InAsP quantum well active regions. Iinewo semi-metal GaAsSb/InAs layers, iyo inoshanda se internal electron sources ye multi-stage injection lasers, uye AlAsSb inoshanda se electron confinement layer. Izvi zvimiro zvinomiririrazvishandiso zvekutanga zvine nhanho dzakawanda zvakagadzirwa nenzira iyi, zvichiratidza kugona kwetekinoroji iyi kugadzira zvinhu zveinfrared zvine hunyanzvi hwakanyanya. Kugona kudzora kufanana uye kufukidzwa kwemafirimu akagadzirwa kwakakosha pakushanda kwemidziyo iyi yepamusoro yeinfrared.

MOCVD muZvigadzirwa Zvemagetsi Zvinoshanda Zvakanyanya

Kubviswa kweMvura yeMetal-Organic Chemical Vapour (MOCVD)tekinoroji inokosha pakugadzira michina yemagetsi inoshanda zvakanyanya. Iyi nzira inoita kuti kukura kwakanyatsojeka kwema semiconductor layers akakosha kune magetsi emagetsi, ma transistors ane frequency yakakwira, uye ma sensor epamusoro.

MOCVD yeMagetsi Emagetsi

Magetsi emagetsi anoda zvinhu zvinokwanisa kubata simba rakawanda uye tembiricha yakanyanya. MOCVD inokosha pakugadzira zvinhu zvakaita seGallium Nitride (GaN) neSilicon Carbide (SiC), izvo zvinekupisa kwakanyanya uye voltage yakanyanya kuputsikaHunhu uhwu hwakakosha kune masisitimu emagetsi emazuva ano.Ma semiconductor ane bandwidth yakakura akadai seSiC neGaNdzakakodzera nzvimbo dzine simba rinoda simba rakawanda. Midziyo inoshandiswa pamagetsi akawandisa, magetsi, uye tembiricha munzvimbo idzi. Madiodhi eGaN, semuenzaniso, akagadzirwa neMOCVD-grown drift regions, akaratidza kuti voltages dzakakanganiswa dzinodarika1.3 kVZvishandiso gumi nezviviri kubva muwafer imwe chete zvakaratidza kugona uku, zvichisvika 90 muzana yemuganhu wepfungwa weparallel-plane.

MOCVD inobvumira kukura kwemachira epitaxial emhando yepamusoro, emhando imwe chete paSiC substrates ane denda shomaIzvi zvakakosha kune ma semiconductor emagetsi. Maitiro aya anopa kutonga kwakaringana pamusoro pekukora, huwandu hwedoping, uye kufanana kwe layer ye epitaxial layer. Zvinhu izvi zvinogadzirisa hunhu hwemagetsi hunodiwa pamidziyo yemagetsi yakaoma. Uyezve, MOCVD yakakodzera kugadzirwa kukuru. Inobvumira kukura kwe epitaxial layer pamidziyo midiki neyakakura, zvichiita kuti michina yakavakirwa paSiC ive inodhura zvakanyanya kuti ishandiswe nevanhu vakawanda. Zvinhu zve semiconductor zve III-nitride, zvinosanganisiraGaN, AlGaN, InGaN, AlN, uye InAlN, inorimwa nenzira iyi kuti ishandiswe zvakanyanya mumagetsi emagetsi, photonics, uye matekinoroji esimba rakachena. Zvinhu izvi zvakakosha pamidziyo yakaita sema transistors emagetsi anoshanda zvakanyanya (HEMTs), ma LED anoonekwa neUV, uye ma laser diodes.

MOCVD mumaTransistors ane Frequency Yakanyanya

Matransistors ane mafrequency akakwirira, akakosha kune masisitimu ekukurukurirana epamusoro, anobatsirwawo zvakanyanya neMOCVD. Maitiro aya anobatsira kukura kwemasisitimu eInP-based material systems emidziyo yakaita seHigh Electron Mobility Transistors (HEMTs), Heterojunction Bipolar Transistors (HBTs), PIN, Mixer, uye Multiplier diodesSemuenzaniso, vaongorori vanogadzira AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) pa4-inch GaN paSiC substrates. Epitaxial wafer, inorimwa neMOCVD, ine i-GaN buffer layer, 0.9 μm isina kurongeka doped GaN channel layer, 25 nm Al0.25Ga0.75N barrier layer, uye 2 nm GaN cap layer. Kuyerwa kweHall patembiricha yemumba kwakaratidza kufamba kwemaerekitironi e1500 cm²/V·s, kuramba kweshiti ye280 Ω/sq, uye huwandu hweshiti yekutakura shiti ye1 × 10¹³/cm².

Kugadzirisa ma ohmic etching patterns (OEPs) ekushandisa Ka-band kunowedzera kushanda. Pattern yemutsetse we1 μm OEP yakaratidza mhedzisiro yepamusoro kana tichienzanisa nedzimwe patterns.

Maumbirwo aya eOEP akagadziridzwa, pamwe chete ne epitaxial layers dzakagadzirwa neMOCVD, zvinoita kuti pave nekushanda kwemafrequency eredhiyo zviri nani. Izvi zvinoitwa nekuderedza kuramba kwekupinda uye kuwedzera nzvimbo yekubata.

MOCVD yeMasensa Epamusoro

Masensa epamusoro anotsigira ma semiconductor layers akagadzirwa nemazvo kuti awedzere kunzwa uye kusarudza.2D transition metal dichalcogenides (TMDs) yakaita se molybdenum disulfide (MoS2)Zvakakosha kumidziyo yemagetsi yechizvarwa chinotevera. Mashandisirwo aya anowanzo sanganisira matekinoroji epamusoro ekuona, achibatsirwa nekukura kwakanyatsojeka kwechikamu nechikamu uye kristallinity yakakwira inopiwa nenzira iyi.

ZnGa2O4 dzakagadzirwa neMOCVD dzinobatsira zvikuru kuma NO gas sensors. Tsvagiridzo yakaratidza kuti kurapwa kwe plasma surface kunowedzera kushanda kwavo zvakanyanya. Izvi zvinoita kuti sensor iite nani ka8 pa5 ppm NO gas concentration, zvichisvika pa5 ppm NO gas concentration.1276.1%Sensor iyi yakagadziriswa yakawanawo muganho mudiki wekuona we2.4 ppb, zvichiratidza kushanda kwehunyanzvi uhwu mukugadzira masensor egasi asina simba repamusoro.

Uyezve,waya dzeindium oxide nanowaya uye mafirimu matete eIn2O3Zvakakura nemaitiro aya zvinoratidza kusarudza zvakanaka kuNO2. Zvinhu izvi zvinoratidza kukanganiswa kushoma kubva kune mamwe magasi, zvichiratidza kusarudza kuri nani. Epilayer yeZnGa2O4 (ZGO) yakakuriswa neMOCVD yakaratidza kunzwa kwakanyanya, kuchinjika, uye kusarudza kwekuona NO pa300 °C. Sensor yeZGO yakaratidza kunzwa kwe1.88Payakaiswa pa125 ppb NO. Yakaratidza kunzwa kwakanyanya kuNO uku isingaite neCO2, CO, uye SO2, zvichiratidza kuti yakawedzera kusarudza. Sensor yeZGO yakaratidzawo mhinduro yakakura kuNO zvichienzaniswa neNO2. Kufungidzira kwekutanga kwakasimbisa kuti mhinduro yakasimba yesensor yegesi yeZGO kuNO inokonzerwa nekuchinja kukuru kwebasa paNO molecule adsorption pamusoro pefirimu rakatetepa.

MOCVD yeSimba Rinodzokororwa uye Kuwanikwa

Kudururwa kweUtsi hweMeta-Organic Chemical (MOCVD) inobatsira zvikuru mukufambira mberi mune tekinoroji yesimba rinogona kushandiswazve uye masisitimu ekuona akanyanya kunaka. Iyi nzira inogonesa kugadzirwa kwezvinhu zvinoshanda zvakanyanya zvakakosha kune masero ezuva anoshanda zvakanaka uye ma photodetector anonzwa.

MOCVD muMasero Ezuva Akabatana Zvakasiyana-siyana

MOCVD irizvakakosha pakugadzira ma solar panels anoshanda zvakanyanya. Inogonesa kugadzirwa kwema semiconductor emagetsi ane mwero wekuchinja simba. Iyi tekinoroji yakakosha pakugadzira simba rakawanda kubva kuzuva, zvichienderana nekusimbiswa kwepasi rose kwesimba rinogona kuvandudzwa. Vaongorori vanowanzogadzira zvinhu.Zvishandiso zveGaInP/GaInAs/Gekushandisa MOCVD pakugadzira masero ezuva ane majoini akawanda anoshanda zvakanyanya. Magadzirirwo aya akaomarara anobatsira kuti chiedza chezuva chisvibiswe munzvimbo dzakasiyana dzesolar spectrum.

Semuenzaniso, sero rezuva rine makutano mashanu III-V, rakagadzirwa uchishandisa MOCVD, rakawana simba rekushandura simba remagetsi.35.1%. Mudziyo uyu une 12 cm² waive nechimiro cheAlGaInP-AlGaAs-GaAs-InGaAs-InGaAs. Subcell yega yega yaive nesimba rakasiyana re bandgap, zvichibvumira kubatwa kwechiedza kwakaringana. Kugona uku kwakanyatsorongeka kunoita kuti MOCVD ive yakakosha pakufambisa miganhu yekushandurwa kwesimba rezuva.

MOCVD yeVanoongorora Mifananidzo Vanoshanda Zvakanaka

MOCVD inoitawo basa rakakosha mukugadzira ma photodetector anoshanda zvakanaka. Midziyo iyi inoshandura chiedza kuita masaini emagetsi, zvichiwana mashandisirwo mukutaurirana, kufungidzira, uye kunzwa. Nzira iyi inobvumira kudzora kwakanyatsojeka pakuumbwa kwezvinhu uye ukobvu hwe layer, izvo zvinokanganisa zvakananga mashandiro e photodetector.

MOCVD inobatsira kukura kweInGaAs PIN photodetector membranes paInP substrates. Mainjiniya vanogona kugadzirisa InGaAs photodetector's spectral sensitivity yewavelengths mukati mehukuru hwakakura (0.4 μm-3.6 μm). Kugadzirisa uku kunoitika nekudzora magadzirirwo ezvinhu nemazvo, zvakaita seIn0.53Ga0.47As, ine bandgap ye0.74 eV uye inovhara mawavelengths ekukurukurirana akakosha. MOCVD inobvumira kuiswa kwakanyatsojeka kwezvikamu zvakasiyana-siyana, kusanganisira p- ne n-type InP, uye zvikamu zvakawanda zveInGaAs zvine ukobvu hwakati (semuenzaniso, 2.2 μm undoped InGaAs absorption layer). Izvi zvikamu zvakakosha pakutsanangura mhinduro ye spectral ye photodetector.

Uyezve, MOCVD inobvumira kukura kweMafirimu e2O3 (In1-xAlx) ane bandgap inogadziriswapaMgO substrates. Kugadziriswa kwebandgap, kunokonzerwa nekuumbwa kwemakemikari uye tembiricha yekukura, kunogonesa zvakananga kugadzirwa kwema photodetector anonzwa kune mamwe ma spectral ranges. Kunyatsojeka uku kunowedzerawo kumhanya kwekupindura. Ma Photodetector anoshandisa mafirimu eMOCVD-grown Ga2O3 akaratidza kumhanya kwekupindurazviri nani kupfuura masekondi 0.1Zvikurukuru, mafotodiode eSchottky barrier akavakirwa paGa2O3 pa mica akaratidza mhinduro iyi nekukurumidza, zvichiratidza kugona kwetekinoroji iyi kuona nekukurumidza.

Kunyatsojeka uye Kuchinja-chinja kweMOCVD

Kuiswa kweMetal-Organic Chemical Vapour kune zvakanakira zvakasiyana mukugadzira semiconductor. Kunyatsorongeka kwayo uye kushandiswa kwayo kwakasiyana-siyana kunoita kuti ive yakakosha pakugadzira michina yepamusoro yemagetsi uye optoelectronic. Iyi tekinoroji inobvumirakutonga kwakanyanya pamusoro pezvinhu zvemukati uye zvivakwa zvemukati.

Basa reMOCVD muKushandiswa Kwezvinhu Zvakasiyana-siyana

Iyi nzira yekuisa inoratidzakushandiswa kwezvinhu zvakasiyana-siyana kunoshamisaInoisa zvinhu zvakasiyana-siyana. Izvi zvinosanganisiraZvinhu zveII-VI, zvinhu zveIII-V, uye crystalline compound semiconducting thin films dzakachena zvakanyanya. Inogadzirawo micro/nanostructures, 0D, 1D, uye 2D nanomaterials. Kunyanya, inobudirira zvikuru neMichina yeIII-V, inosanganisira zvinhu zvesimbi zvakaita segallium ne indium, uye zvinhu zveboka V zvakaita se arsenic ne phosphorus.GaAs heterostructuresuyeZvinhu zveGaN zvemaLED nemidziyo yemagetsimashandisirwo akajairika.

Iyi inzira inoshanda zvakasiyana-siyana. Inoisa macompound semiconductors, nitrides, uye oxides kuburikidza nemakemikari akasiyana-siyana eprecursor. Inowanzo shandiswa pazvinhu zvephosphide (P). Kune zvinhu zvakagadzirwa nearsenide, nzira iyi neMBE zvine hunyanzvi hwakafanana. Zvisinei,MBE ndiyo nzira inonyanya kufarirwa yekukura kwechinhu chinonzi antimonide (Sb)uye kune mamwe maumbirwo epamusoro-soro akadai semadotsi equantum.

MOCVD yeKudzora Maturikirwo Akanyatsonaka

Nzira iyi inobvumira kukura kwezvikamu zvakasiyana-siyana zvakaoma pamwe chetekunyatsojeka kwemazinga eatomuMainjiniya anogadzira kuchinja kwakapinza kwemaatomu pakati pezvikamu. Izvi zvinoitika nekungochinja magasi epamberi anoyerera achipinda mureactor. Kudzora uku kwakakosha pakugadzirisa hunhu hwemagetsi nehwemaziso hwezvishandiso zve semiconductor zvine zvikamu zvakawanda. Maitiro acho anoonekwa se 'kuvaka kwemazinga eatomu'. Zvikamu zvakatetepa zvakanyanya, zve crystalline zvinovakwa neatomu. Iyi nzira inodzorwa zvakanyanya inobatsira kukura kwe epitaxial. Maatomu anozvironga nenzira yakarongeka zvakanyanya, achienzanisa chimiro chekristaro chiri pasi pewafer. Izvi zvinoita kuti chimiro chekristaro chirambe chichienderera mberi.

Kukwanisa Kukura kweMOCVD pakugadzira

Sisitimu iyi inopawo mukana wakakura wekugadzira zvinhu zvakawanda. Ma "reactor" emaindasitiri anokwana akawandamawaferSemuenzaniso, Planetary Reactors, mubatomawafer anosvika 200 mm (anenge masendimita masere)Izvi zvinotsigira kugadzirwa kwezvinhu zvakachipa uye zvinodhura zvakanyanya. GaN Planetary Reactor yechizvarwa chechishanu yakagadzira maepiwafer masere ane hurefu hwemainji matanhatu panguva imwe chete.

• Mawafer ane masendimita manazvinoshandiswa zvakanyanya pakuenzanisa mutengo nehuwandu mukugadzirwa kwakawanda.
• Mawafer e 6-inch ari kuwana simba rekugadzira zvinhu zvakawanda, pasinei nematambudziko ehunyanzvi.

MOCVD inokosha pakugadzira michina yemazuva ano yakasiyana-siyana yemagetsi uye optoelectronic. Kugona kwayo kwakasiyana mukuita zvinhu nemazvo uye kushandiswa kwezvinhu zvakasiyana-siyana kunotungamira hunyanzvi mumaindasitiri akawanda epamusoro-soro. Iyi tekinoroji inogonesa kugadzirwa kwezvivakwa zvakaoma zve semiconductor zvine hutongi hwakanyanya. MOCVD inoramba iri tekinoroji huru, ichigonesa kufambira mberi muchiedza, kutaurirana, komputa, uye simba rinogona kuvandudzwa. Inogara ichisundira miganhu yezvinogona kuitika mune zvesainzi yezvinhu yepamusoro.