He aha te whakamahinga o te MOCVD?

Ko te MOCVD te mea nui hei whakatipu i ngā kiriata haurua-ā-ira angiangi. He mea nui ēnei kiriata mō ngā taputapu hiko me ngā taputapu optoelectronic matatau. E whakaatu ana te mākete mō te hangarau MOCVD i te tipu pakari. E whakatau ana ngā tohunga ko tōna uara mākete kei1.1 piriona tāra tāra i te tau 2023E matapaetia ana ka eke te moni whiwhi ki te USD 2.8 piriona i te tau 2033, e whakaatu ana i te tere tipu ā-tau (CAGR) o te 9.7%. E whakaatu ana tēnei whānui nui i te tūranga nui a MOCVD i roto i te whanaketanga hangarau.

Ngā Whakaaro Matua

• MOCVDka whakatupu i ngā kiriata haurua-ā-ira angiangi. He mea nui ēnei kiriata mō te maha o ngā taputapu hiko.
• Ka āwhina a MOCVD ki te hanga taputapu matatau. Kei roto i ēnei ko ngā rama LED, ngā taiaho taiaho, me ngā hikohiko mana.
• He pai te MOCVD mō te pūngao hou. Ka āwhina i te hanga i ngā pūtau rā me ngā pūoko mārama pai ake.
• He tino pai te mana whakahaere a te MOCVD. Ka hangaia he paparanga me te tino tika o te ngota hei whakapai ake i te mahi a te taputapu.
• Ka taea e te MOCVD te hanga i ngā taputapu maha i te wā kotahi. Nā tēnei he pai mō te whakaputanga nui.

MOCVD mō ngā Pūrere Optoelectronic Matatau

Te Whakatakotoranga Kohu Matū Whakarewa-Waro (MOCVD)He mea nui te mahi a te hangarau nei i roto i te hanganga o ngā taputapu hiko matatau. Mā tēnei hangarau ka taea te tipu tika o ngā kiriata haurua-ira angiangi, he mea nui ēnei ki te mahi a ngā rama-whakaputa mārama hou, ngā rama-whakaputa taiaho, me ngā rama-whakaputa whero-whero.

MOCVD i roto i te Hanganga LED

He mea nui tēnei tikanga whakatakoto mō te hanga i ngā Diode Whakaputa-Mārama (LED) tino mahi. Ka āwhina i te tipu o ngā pūnaha rauemi nui pēnei i teTe Nitride Kariuma (GaN), te Ārēnide Kariuma (GaAs), me te Phosphide Iniuma (InP), mengā matū arsenide/phosphide (As/P). Ko ēnei rauemi te pūtake mō te tukunga mārama whai hua. Hei tauira,ngā rama rama InGaN maha-pūnga-rauemi 407 nm te mahi-teiteika hangaia mā te whakamahi i tēnei tikanga. He maha ngā wā ka whakauruhia e ēnei taputapu he paparanga horapa iahiko GaN kāore i tāpirihia me ngā arai AlGaN he nui te ihirangi konumohe. Ka whakapai ake tēnei hoahoa i te whai huatanga o te tukunga mārama mā te whakaiti i te waipuke iahiko werohanga.Ngā puna maha-inti InGaN/GaN (MQW)he hanganga rauemi noa mō te hanga LED kanapa-tiketike. Ko te tipu mā te whakamahi i tēnei tikanga ka tino whakapai ake i tete ōritetanga me te hipoki o ēnei kiriata angiangi ā-atomika, e pā tika ana ki te hanganga tauine-wafer o ngā rauemi 2D mō ngā taputapu optoelectronic mahi teitei. AKo te rama InGaN whero, e tukuna ana i te 625 nm, i tutuki i te pai o te pai o te rahinga o waho (EQE) o te 10.5%mā roto i tētahi tikanga epitaxial matatini e uru ana ki ngā paparanga superlattice kua whakarārangihia me te utunga taumahatanga.

MOCVD mō ngā Taiaho Diode

Ko ngā taiaho taiaho, arā, ngā wāhanga nui o te whakawhitiwhiti kōrero whatu me te rokiroki raraunga, e whakawhirinaki nui ana ki tēnei hangarau. Mā tēnei tikanga ka taea te tipu o ngā kiriata epitaxial kounga teitei mā te whakamahi i ngā pūnaha rauemi pēnei i te Gallium Arsenide (GaAs), te Gallium Nitride (GaN), me te Indium Phosphide (InP). Mā ngā tikanga tipu ka āwhina i te whanaketanga ongā taiaho reera roangaru kitea mai i ngā koranu III-V pēnei i te InGaPA me te InGaAlP. Hei tāpiritanga atu,Ka tukuna e ngā taiaho ira-kōmi InAs/GaAs i whakatōkia e tēnei hangarau te mārama O-band, inā koa i te 1.3 µm.. Ko te tika o te tukanga whakatakoto he mea nui ki te pono me te roa o te ora o ēnei taputapu. Hei tauira, he mea nui ki te whakatipu i ngā kiriata epitaxial kounga teitei mō ngā diode taiaho ZnSe, e hua ake ana i te whakapainga nui o ā rātoute roanga o te oranga, tae atu ki te 500 hāora i te 20°C i raro i te mahi ngaru tonuKa whakamahia hoki e ngā kairangahau tēnei tikanga hei whakatipungā taiaho poka irahiko kotahi InGaAs-AlGaAs e whāwhātia ana i te rohe whānui e mahi ana i te 975nm pea, e āwhina ana ki te mārama ki ngā tikanga pirau.

MOCVD i roto i ngā Kaiwhakaputa Pūwero

He mea nui anō hoki tēnei tikanga whakatakoto mō te whakaputa i ngā kaitārai whero matatau, e kitea ana ngā whakamahinga i roto i te rongo, te whakaahua, me te whakawhitiwhiti kōrero. Mā tēnei tikanga ka taea te whakatakoto tika i ngā hanganga rauemi uaua. Hei tauira, ka whakatipuhia ngā taiaho waenga-whero mā te whakamahi i tēnei tukanga. Kei roto i ēnei taputapu matatau ngā whakakikorua AlAsSb, ngā rohe hohe InAsSb kua werohia, me ngā rohe hohe puna irahiko maha-wāhanga, momo I InAsSb/InAsP. Kei roto hoki i a rātou ngā paparanga GaAsSb/InAs haurua-whakarewa, e mahi ana hei pūtake irahiko ā-roto mō ngā taiaho werohanga maha-wāhanga, ā, ko AlAsSb te paparanga here irahiko. Ko ēnei hanganga e tohu ana i tengā taputapu maha-wāhanga tuatahi i whakawhanakehia mā tēnei tikanga, e whakaatu ana i te kaha o te hangarau ki te waihanga i ngā wāhanga pūwero-whero tino motuhake. He mea nui te kaha ki te whakahaere i te ōritetanga me te kapinga o ngā kiriata kua hangaia mō te mahi a ēnei taputapu pūwero-whero matatau.

MOCVD i roto i ngā Hikohiko Mahi-Tiketike

Te Whakatakotoranga Kohu Matū Whakarewa-Waro (MOCVD)He hangarau tūāpapa tēnei mō te whakawhanake i ngā taputapu hiko mahi-teitei. Mā tēnei tikanga ka taea te tipu tika o ngā paparanga haurua-ā-ira e hira ana mō ngā hikohiko mana, ngā transistors auau-teitei, me ngā pūoko matatau.

MOCVD mō ngā Hikohiko Mana

E hiahia ana ngā hikohiko mana ki ngā rauemi e kaha ana ki te tu atu ki ngā mātotorutanga mana teitei me ngā pāmahana tino kino. He mea nui te MOCVD mō te whakaputa rauemi pēnei i te Gallium Nitride (GaN) me te Silicon Carbide (SiC), e mau ana ite kawe wera pai rawa atu me te ngaohiko pakaru teiteiHe mea nui ēnei āhuatanga mō ngā pūnaha hiko o ēnei rā.Ngā haurua-āputa whānui pērā i te SiC me te GaNhe pai mō ngā taiao hiko e hiahiatia ana. Ka tukuna ngā taputapu ki te ngaohiko teitei, te iahiko, me te pāmahana i roto i ēnei tautuhinga. Hei tauira, ko ngā diode GaN, i hangaia me ngā rohe nekeneke kua tipuhia e te MOCVD, kua whakaatu i ngā ngaohiko pakaru e nui atu ana i1.3 kVTekau mā rua ngā taputapu mai i te anga kotahi i whakaatu i tēnei āheinga, ā, i tae atu ki te 90 ōrau o te rohenga papa-whakarara ariā.

Mā te MOCVD ka taea te tipu ongā paparanga epitaxial kotahi-kiriata kounga teitei i runga i ngā papa SiC me ngā kiato hapa itiHe mea nui tēnei mō ngā haurua hiko. Mā te tukanga ka taea te whakahaere tika i te matotoru, te kukū tāpiri, me te ōritetanga o te paparanga o te paparanga epitaxial. Ka arotauhia e ēnei āhuatanga ngā āhuatanga hiko e tika ana mō ngā taputapu hiko uaua. Hei tāpiri, he pai te MOCVD mō te whakaputanga nui. Ka taea te tipu o ngā paparanga epitaxial i runga i ngā papa iti me ngā papa nui, ka whai hua te utu o ngā taputapu SiC mō te whakamahinga whānui. Ngā rauemi haurua III-nitride, tae atu kiGaN, AlGaN, InGaN, AlN, me InAlN, ka whakatipuria mā tēnei tikanga mō ngā tono mahi-teitei i roto i ngā hikohiko mana, ngā hangarau whakaahua, me ngā hangarau pūngao ma. He mea nui ēnei rauemi mō ngā taputapu pēnei i ngā transistors mana whai hua-teitei (HEMT), ngā rama LED e kitea ana e te UV, me ngā diode taiaho.

MOCVD i roto i ngā Transistors Auau-Teitei

Ko ngā transistors auau-tiketike, he mea nui mō ngā pūnaha whakawhitiwhiti kōrero matatau, ka whai hua nui hoki i te MOCVD. Mā te tukanga ka āwhina i te tipu o ngā pūnaha rauemi e hangai ana ki te InP mō ngā taputapu pēnei i ngā Transistors Nekenekehanga Hiko-Teitei (ngā HEMT), ngā Transistors Bipolar Heterojunction (HBT), ngā PIN, ngā Mixer, me ngā Multiplier diodesHei tauira, ka hangaia e ngā kairangahau ngā Transistors Nekehanga-High-Electron-Neck (HEMT) AlGaN/GaN i runga i te GaN 4-inihi i runga i ngā papa SiC. Ko te papa epitaxial, i whakatipuria e MOCVD, he paparanga parepare i-GaN, he paparanga hongere GaN 0.9 μm i tāpirihia kāore i te tūpono, he paparanga ārai Al0.25Ga0.75N 25 nm, me te paparanga taupoki GaN 2 nm. Ko ngā inenga Hall i te pāmahana rūma i whakaatu i te nekehanga irahiko o1500 cm²/V·s, he ātete rau o te 280 Ω/tapawhā, me te mātotoru kawe rau o te 1 × 10¹³/cm².

Mā te arotau i ngā tauira whakairo ohmic (OEP) mō ngā tono Ka-band ka whakarei ake i te mahi. I whakaatuhia e te tauira rārangi 1 μm OEP ngā hua pai ake i ērā atu tauira.

Mā tēnei hanganga OEP kua arotauhia, me ngā paparanga epitaxial kua whakatipuria e te MOCVD, ka hua ake he mahi auau reo irirangi pai ake. Ka tutuki tēnei mā te whakaiti i te ātete urunga me te whakanui ake i te horahanga whakapā.

MOCVD mō ngā Pūoko Matatau

Ka whakawhirinaki ngā pūoko matatau ki ngā paparanga haurua-ā-ira kua hangaia kia tika te aro me te whiriwhiri. Te tipu o te MOCVD oNgā dichalcogenides whakarewa whakawhiti 2D (TMD) pērā i te molybdenum disulfide (MoS2)He mea nui tēnei mō ngā taputapu nano-hiko o te whakatupuranga e whai ake nei. He maha ngā wā ka uru atu ēnei tono ki ngā hangarau pūoko matatau, e whai hua ana i te tipu tika o ia paparanga, me te kaha tioata teitei e tukuna ana e te tikanga.

He tino whai hua ngā paparanga ZnGa2O4 i whakatipuria ki te MOCVD mō ngā pūoko hau NO. Kua whakaatuhia e te rangahau he nui ake te whakapai ake o te maimoatanga mata plasma i tā rātou mahi. Ka hua ake tēnei i te whakapainga 8-ngā wā i roto i te urupare a te pūoko mō te kukū hau NO 5 ppm, ka eke ki te1276.1%I tutuki hoki i tēnei pūoko kua arotauhia te rohenga iti o te kitenga o te 2.4 ppb, e whakaatu ana i te whai huatanga o te tikanga ki te whakaputa i ngā pūoko hau NO mahi teitei.

Hei tāpiri atu,ngā waea nano waikura indium me ngā kiriata angiangi In2O3he pai te whiriwhiringa o te NO2 i whakatipuria mā tēnei tukanga. He iti noa te pokanoa o ēnei rauemi mai i ētahi atu hau, e tohu ana i te pai ake o te whiriwhiringa. He nui te aro o te paparanga ZnGa2O4 (ZGO) i whakatipuria e te MOCVD, he kaha te hurihanga, me te whiriwhiringa mō te kimi i te NO i te 300 °C. I whakaatuhia e te pūoko ZGO he aro o1.88i te wā i pāngia ai e te 125 ppb NO. I whakaatuhia he tino aro ki te NO, engari he iti noa te tauhohenga ki te CO2, CO, me te SO2, e tohu ana i te pikinga o te whiriwhiringa. I whakaatuhia hoki e te pūoko ZGO he urupare nui ake ki te NO i whakaritea ki te NO2. I whakaūhia e ngā whakatauira mātāpono-tuatahi ko te urupare kaha a te pūoko hau ZGO ki te NO i ahu mai i te huringa nui o te mahi mahi i runga i te mimiti o te ngota NO i runga i te mata angiangi.

MOCVD mō te Pūngao Whakahou me te Kitenga

Te Whakatakotoranga o te Kohu Matū Whakarewa-Waro (MOCVD) he tino whai wāhi ki ngā whanaketanga o ngā hangarau pūngao hou me ngā pūnaha kimi matatau. Mā tēnei tikanga ka taea te hanga rauemi mahi-teitei e tika ana mō ngā pūtau rā whai hua me ngā taputapu kimi whakaahua tairongo.

MOCVD i roto i ngā Pūtau Rā Maha-Huinga

Ko te MOCVDhe mea nui mō te hanga panera rā whai hua nui. Mā tēnei ka taea te hanga i ngā haurua-ā-ira me ngā tere whakawhiti pūngao kua whakapaitia. He mea nui tēnei hangarau mō te whakaputa hiko nui ake mai i te rā, e hangai ana ki te aro nui o te ao ki te pūngao whakahou. Ko te tikanga ka hangaia e ngā kairangahauNgā taputapu GaInP/GaInAs/Gete whakamahi i te MOCVD mō te hanga tauine arumoni o ngā pūtau hiko maha-hononga tino whai hua. Ka whakanuia e ēnei hanganga matatini te mimiti o te hihi o te rā puta noa i ngā wāhanga rerekē o te whānuitanga o te hihi o te rā.

Hei tauira, i tutuki i tētahi pūtau hiko pūngao III-V e rima-hononga, i hangaia mā te whakamahi i te MOCVD, te whai huatanga o te hurihanga hiko o35.1%. I whakaatuhia i tēnei taputapu 12 cm² he hanganga AlGaInP-AlGaAs-GaAs-InGaAs-InGaAs. He pūngao āputa roopu motuhake tō ia pūtau iti, e āhei ai te hopu mārama pai rawa atu. Nā tēnei āheinga paparanga tika ka tino hiahiatia te MOCVD mō te pana i ngā rohe o te huringa pūngao o te rā.

MOCVD mō ngā Pūoko Whakaahua Whai Hua

He mahi nui anō tā te MOCVD ki te hanga i ngā taputapu kimi whakaahua whai hua. Ka hurihia e ēnei taputapu te mārama hei tohu hiko, ka kitea ngā tono i roto i te whakawhitiwhiti kōrero, te whakaahua, me te rongo. Mā tēnei tikanga ka taea te whakahaere tika i te hanganga rauemi me te matotoru o te paparanga, e pā tika ana ki te mahi a te taputapu kimi whakaahua.

Mā te MOCVD ka āwhina i te tipu o ngā kiriuhi whakaahua InGaAs PIN i runga i ngā papa InP. Ka taea e ngā kaihangarau te arotau i te aro o te whakaahua InGaAs mō ngā roangaru i roto i te whānuitanga whānui (0.4 µm-3.6 µm). Ka puta tēnei arotautanga mā te whakahaere tika i te hanganga rauemi, pērā i te In0.53Ga0.47As, he āputa roopu 0.74 eV, ā, e kapi ana i ngā roangaru whakawhitiwhiti kōrero matua. Mā te MOCVD ka taea te whakatakoto tika i ngā paparanga rerekē, tae atu ki te InP momo-p me te momo-n, me ngā paparanga InGaAs maha me ngā matotoru motuhake (hei tauira, he paparanga mimiti InGaAs 2.2 μm kāore i tāpirihia). He mea nui ēnei paparanga mō te tautuhi i te urupare ā-tirohanga o te photodetector.

Hei tāpiritanga, mā te MOCVD ka taea te tipu oNgā kiriata (In1-xAlx)2O3 me te āputa whitiki ka taea te whakarerekēi runga i ngā papa MgO. Ko te āheinga o te whakarerekētanga o te āputa roopu, e pāngia ana e te hanganga matū me te pāmahana tipu, ka āhei tika te hanga i ngā taputapu whakaahua e aro ana ki ngā whānuitanga hihi motuhake. Ka horapa atu hoki tēnei tika ki te tere urupare. Kua whakaatuhia e ngā taputapu whakaahua e whakamahi ana i ngā kiriata Ga2O3 i whakatipuria e te MOCVD he tere urupare.pai ake i te 0.1 hēkonaIna koa, i whakaatuhia e ngā photodiode arai Schottky i runga i te Ga2O3 i runga i te mika tēnei urupare tere, e whakaatu ana i te kaha o te hangarau ki te kite tere-tiketike.

Te Tika me te Whānuitanga o te MOCVD

He painga ahurei te whakatakoto i te kohu matū whakarewa-waro i roto i te hanga haurua-haurua. Nā te tika me te whānui o te whakamahinga, he mea nui mō te hanga i ngā taputapu hiko me ngā taputapu optoelectronic matatau. Mā tēnei hangarau ka taea tete mana whakahaere tino pai ki ngā āhuatanga rauemi me ngā hanganga paparanga.

Te Tūranga a te MOCVD i roto i te Whānuitanga o ngā Rauemi

E whakaatu ana tēnei tikanga whakatakotote whānuitanga o ngā rauemi whakamiharoHe whānuitanga o ngā rauemi ka whakatakotoria e ia. Kei roto i ēnei koNgā rauemi II-VI, ngā rauemi III-V, me ngā kiriata angiangi haurua-whakahaere matū tioata parakore-teitei. Ka hangaia hoki e ia ngā hanganga moroiti/nano, ngā rauemi nano 0D, 1D, me te 2D. Ina koa, he tino pai ki a iaNgā haurua-ā-ira III-V, e whakauru ana i ngā huānga konganuku pēnei i te gallium me te indium, me ngā huānga rōpū V pēnei i te arsenic me te phosphorus.Ngā hanganga rerekē o te GaAsmeNgā rauemi e hangai ana ki te GaN mō ngā LED me ngā taputapu hikohe tono noa.

He tikanga tino maha ngā whakamahinga o tēnei. Ka tāpaetia ngā matū haurua-ira, ngā nitride, me ngā waikura mā te whakamahi i ngā matū matū rerekē. Ko te tikanga he pai ake mō ngā rauemi phosphide (P). Mō ngā rauemi e hangai ana ki te arsenide, he rite tonu ngā āheinga o tēnei tikanga me te MBE. Heoi,Ko te MBE te tikanga pai mō te whakatipu rauemi antimonide (Sb)me ngā hanganga matatau ake pērā i ngā ira matū.

MOCVD mō te Mana Papa Tika

Mā te tikanga ka taea te tipu o ngā hanganga rerekē matatini mete tika o te taumata-atomikaKa hangaia e ngā miihini he whakawhiti koi ā-atomika i waenga i ngā paparanga. Mā te whakawhiti noa i ngā hau o mua e rere ana ki roto i te tauhohenga ka puta tēnei. He mea nui tēnei whakahaere mō te whakarite i ngā āhuatanga hiko me te whatu o ngā taputapu haurua-maha-paparanga. E kiia ana te tukanga he 'hanga taumata-atomika'. Ka hangaia ngā paparanga tioata tino angiangi, ā-atomika. Mā tēnei tikanga tino whakahaere ka āwhina i te tipu epitaxial. Ka whakarite ngā ātomika i a rātou anō i roto i te āhua tino raupapa, e whakaata ana i te hanganga tioata o raro o te wafer. Mā tēnei ka whakarite kia haere tonu te hanganga tioata i ia paparanga, i ia paparanga.

Te Tauine o te MOCVD mō te Whakaputa

He nui hoki te kaha o tēnei pūnaha ki te whakawhanui i te nui o te whakaputanga. He maha ngā mea ka taea te whakamahi i roto i ngā tauhohenga ahumahi.ngā papaHei tauira, ka whakahaerehia e ngā Tauhohenga Aorangingā papa angiangi tae atu ki te 200 mm (tata ki te 8 inihi). Ka tautokohia e tēnei te hanga iti te utu, nui te rahinga. I whakatipuria e te GaN Planetary Reactor o te rima o ngā whakatipuranga e waru ngā epiwafer 6-inihi i roto i te oma kotahi.

• Ngā papa angiangi 4-inihie whakamahia whānuitia ana hei whakataurite i te utu me te rahinga i roto i te whakaputa rahinga nui.
• Ahakoa ngā wero hangarau, kei te piki haere te aro o ngā kaihanga angiangi 6-inihi.

He mea nui te MOCVD mō te hanga i te whānuitanga o ngā taputapu hiko me ngā taputapu optoelectronic hou. Ko ōna āheinga ahurei ki te tika me te whānui o ngā rauemi e akiaki ana i te auahatanga puta noa i ngā ahumahi hangarau teitei. Mā tēnei hangarau ka taea te hanga i ngā hanganga semiconductor matatini me te mana whakahaere tino pai. Kei te noho tonu te MOCVD hei hangarau tūāpapa, e taea ai te whakatairanga i te rama, te whakawhitiwhiti kōrero, te rorohiko, me te pūngao whakahou. Ka pana tonu i ngā rohe o ngā mea ka taea i roto i te pūtaiao rauemi matatau.