With the gradual mass production of conductive SiC substrates, higher requirements are put forward for the stability and repeatability of the process. In particular, the control of defects, the sma...
1 Application and research progress of silicon carbide coating in carbon/carbon thermal field materials
1.1 Application and research progress in crucible preparation
In the single crystal thermal ...
Tantalum carbide hardness, high melting point, high temperature performance, mainly used as a cemented carbide additive. The thermal hardness, thermal shock resistance and thermal oxidation resista...
SiC has excellent physical and chemical properties, such as high melting point, high hardness, corrosion resistance and oxidation resistance. Especially in the range of 1800-2000 ℃, SiC has good ab...
In the context of carbon neutral transition, all countries have high hopes for hydrogen energy, believing that hydrogen energy will bring great changes to industry, transportation, construction an...
Triangular defect
Triangular defects are the most fatal morphological defects in SiC epitaxial layers. A large number of literature reports have shown that the formation of triangular defects is re...