Universal Hydrogen’s hydrogen fuel cell demonstrator made its maiden flight to Moss Lake, Washington, last week. The test flight lasted 15 minutes and reached an altitude of 3,500 feet. The t...
In SiC crystal growth production lines, many engineers focus on hot-zone design, temperature control curves, and powder formulation. Yet when yield fluctuations arise, the root cause often traces b...
Atmospheric pressure sintered silicon carbide is no longer just used as an abrasive, but more as a new material, and is widely used in high-tech products, such as ceramics made of silicon carbide m...
When silicon carbide crystal grows, the “environment” of the growth interface between the axial center of the crystal and the edge is different, so that the crystal stress on the edge i...
During the vapor phase epitaxy (VPE) process, the role of the pedestal is to support the substrate and ensure uniform heating during the growth process. Different types of pedestals are suitable fo...
High-quality SiC graphite epitaxial susceptors in 2026 possess superior material purity, precise dimensional stability, advanced coating integrity, and optimized thermal performance. These c...