Ibyuma bya SiC Coated Graphite, sic coating, SiC coating itwikiriwe na Graphite substrate kuri Semiconductor

Karubide ya silikoni itwikiriweDisiki ya grafiti ni ugutegura urwego rwo kurinda karubide ya silikoni ku buso bwa grafiti binyuze mu gushyira umwuka uturuka ku mwuka cyangwa imiti no kuwutera. Urwego rwo kurinda karubide ya silikoni rwateguwe rushobora gufatanywa neza na matrix ya grafiti, bigatuma ubuso bw'ibanze bwa grafiti burushaho kuba bunini kandi butagira imyanda, ibyo bigatuma matrix ya grafiti iba ifite imiterere yihariye, harimo kurwanya ogisijeni, kurwanya aside na alkali, kurwanya isuri, kurwanya ingese, nibindi. Kuri ubu, irangi rya Gan ni kimwe mu bintu by'ingenzi bifasha karubide ya silikoni gukura neza mu gice cya epitaxial.

Semiconductor ya silicon carbide ni igikoresho cy'ingenzi cya semiconductor nshya yakozwe ifite uburebure bwa band gap. Ibikoresho byayo bifite imiterere yo kudakoresha ubushyuhe bwinshi, kudakoresha ingufu nyinshi, imbaraga nyinshi no kudakoresha imirasire. Ifite ibyiza byo guhinduranya vuba no gukora neza cyane. Ishobora kugabanya cyane ikoreshwa ry'ingufu z'ibicuruzwa, kongera ubushobozi bwo guhindura ingufu no kugabanya ingano y'ibicuruzwa. Ikoreshwa cyane cyane mu itumanaho rya 5g, mu ngabo z'igihugu no mu nganda za gisirikare. Urwego rwa RF ruhagarariwe n'indege n'urwego rw'amashanyarazi ruhagarariwe n'imodoka nshya zikoresha ingufu n'"ibikorwa remezo bishya" bifite amahirwe menshi kandi agaragara ku isoko haba mu nzego za gisivili n'iza gisirikare.

Substrate ya silicon carbide ni ingenzi mu bikoresho bya semiconductor nshya yakozwe na wide band gap. Substrate ya silicon carbide ikoreshwa cyane cyane mu bikoresho by'ikoranabuhanga bya mikoroonde, ibikoresho by'ikoranabuhanga bikoresha ingufu n'ibindi bikoresho.. Iri ku mpera y'imbere y'uruhererekane rw'inganda za semiconductor rufite icyuho kinini kandi ni ibikoresho by'ingenzi kandi by'ibanze. Substrate ya silicon carbide ishobora kugabanywamo ubwoko bubiri: insulation ya semi na conductive. Muri zo, substrate ya silicon carbide ifite insulation ya semi ifite resistivity yagutse (resistivity ≥ 105 Ω· cm). Substrate irinda insulation ya semi ihujwe n'urupapuro rwa gallium nitride epitaxial rushobora gukoreshwa nk'ibikoresho by'ibikoresho bya RF, bikoreshwa cyane cyane mu itumanaho rya 5g, mu ngabo z'igihugu no mu nganda za gisirikare muri ibi bice byavuzwe haruguru; Indi ni substrate ya silicon carbide irinda insulation ya semiconductive ...