Ibyiza byihariye bya SiC-yashizwemo na grafite suseptors harimo ubuziranenge buhebuje cyane, gutwikira abantu hamwe nubuzima bwiza bwa serivisi.Bafite kandi imiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.
SiC itwikiriye Graphite substrate ya porogaramu ya Semiconductor itanga igice gifite isuku irenze kandi irwanya umwuka wa okiside.
CVD SiC cyangwa CVI SiC ikoreshwa kuri Graphite yibice byoroshye cyangwa bigoye gushushanya.Ipitingi irashobora gukoreshwa mubwinshi butandukanye no mubice binini cyane.
Ibiranga:
· Kurwanya Ubushuhe buhebuje
· Kurwanya umubiri mwiza cyane
· Kurwanya imiti nziza cyane
· Ubuziranenge buhebuje
· Kuboneka muburyo bugoye
· Irakoreshwa munsi ya Oxidizing Atmosphere
Gusaba:
Ibintu bisanzwe bya Base Graphite Ibikoresho:
Ubucucike bugaragara: | 1,85 g / cm3 |
Kurwanya amashanyarazi: | 11 μΩm |
Icyerekezo cyoroshye: | 49 MPa (500kgf / cm2) |
Gukomera ku nkombe: | 58 |
Ivu: | <5ppm |
Amashanyarazi: | 116 W / mK (100 kcal / mhr- ℃) |
Carbone itanga susceptors hamwe nibice bya grafite kubintu byose bigezweho.Inshingano zacu zirimo ibishishwa bya barriel kubikoresho byashyizwe mu bikorwa na LPE, ibyokurya bya pancake kubice bya LPE, CSD, na Gemini, hamwe na sousseptors imwe ya wafer kubisabwa na ASM.Mu guhuza ubufatanye bukomeye na OEM iyobora, ubumenyi bwibikoresho no gukora ubumenyi-buryo, SGL itanga igishushanyo cyiza cya porogaramu yawe.