Chidzidzo Chemuenzaniso: Zvikamu zveGraphite Zvakachena Kwazvo zve32-Inch Monocrystalline Thermal Fields muN-Type Silicon Growth
Munyori:Dr. Steven Qiu, Senior Semiconductor Materials Engineer & Technical Director kuVET Energy
Yakabudiswa:Nyamavhuvhu 2026 | Mushumo weUnyanzvi & Kuongorora kweUinjiniya
Pfupiso yeVatungamiriri & Pfupiso yePurojekiti
- Maindasitiri:Kugadzira Silicon Wafer yeSolar PV & Semiconductor
- Maitiro:Czochralski (CZ) N-Type (TOPCon/HJT) Monocrystalline Ingot Pulling
- Zvishandiso:Mafuro emumunda ane dhayamita 32-Inch (50 Units Akaongororwa)
- Mhinduro:Zvikamu zveGraphite Zvakacheneswa Zvakadzika zveHalogen (Ash ≤ 2-5 ppm) + CVD SiC Coating
- Mhedzisiro Yakayerwa:Hupenyu hwese hweMutakuri weMinority hwakawedzera kubva pa <100 μs kusvika >380 μs; Ingot Yield +18%; Thermal Field Lifespan +30%.
Nhanganyaya: Dambudziko reMunda weThermal we32-Inch mukukura kweSilicon yemhando yeN inoshanda zvakanyanya
Sezvo indasitiri ye photovoltaics ichichinja nekukurumidza kubva ku P-type PERC kuenda ku N-type TOPCon ne Heterojunction (HJT) solar cells, kudiwa kwema silicon wafers akachena zvakanyanya kwawedzera zvakanyanya. Substrates dze silicon dzemhando ye N dzinoda hupenyu hwepamusoro hwekutakura hushoma (kazhinji >300 μs) uye kusvibiswa kwesimbi inoshanduka kusvika zero.
Kuti vawedzere simba rekushandisa, vagadziri vesilicon wafer vari kuwedzera saizi dze crucible kusvika 32 inches zvichikwira. Zvisinei, kushanda patembiricha inodarika 1,450°C munzvimbo inopisa ine 32 inches kunounza matambudziko makuru einjiniya:
- Kuora kwekupisa uye kusawirirana:Kupisa kwakanyanya kunokonzera kushanduka kwechimiro uye kutsemuka mumaheaters nemapedestals egirafiti akajairwa.
- Kusvibiswa kweSimbi Isingachinji:Zvinhu zvisina kuchena (Fe, Ni, Cu, V) zviri mugirafiti yemazuva ano zvinopera simba panguva yekudhonzwa kwekristaro kwenguva refu, zvichifamba zvakananga musilicon yakanyungudutswa uye zvichikonzera kuora kwakanyanya kwehupenyu hwese hwekutakura zvinhu.
Mhinduro yeUinjiniya: Ultra-Purified Isostatic Graphite & CVD SiC Shielding
Kuti vakunde matambudziko aya ehunyanzvi, VeTek Semiconductor yakaisa gadziriro yakakwana yekuvandudza zvinhu munzvimbo yese ye32-inch thermal field assembly, inosanganisira high-density isostatic graphite yakacheneswa zvakanyanya nekupisa kwe halogen uye CVD Silicon Carbide (SiC) coatings.
1. Kucheneswa kweHalogen Yakadzika (Kuwanda kweDota ≤ 2-5 ppm)
Graphite yeindasitiri yakajairika ine dota rakawanda riri pakati pe50 ppm ne200 ppm. Pa1,450°C pasi pevacuum, zvinhu izvi zvinopera simba. Maitiro edu ekuchenesa gasi reHalogen Gas Purification Process anoshandura tsvina yesimbi kuita macompounds ehalogen anoputika (chlorides/fluorides) patembiricha iri pamusoro pe2,400°C.
- Kuedzwa kweGlow Discharge Mass Spectrometry (GDMS)inosimbisa kuti tsvina yese yesimbi (Fe, Cr, Ni, Cu, V) yaderedzwa kusvika pasi pe0.5 ppm, zvichiita kuti dota rive ne ≤ 2 ppm.
- Mhedzisiro:Inobvisa kushanduka kwegasi resimbi, ichidzivirira dziva resilicon rakanyungudutswa kubva mukusvibiswa mukati memaawa anopfuura zana nemakumi maviri ekudhonza nguva dzose.
2. High-Density Isostatic Graphite Structure yeThermal Stability
Zvinhu zvinosanganisira graphite heater, crucible susceptor, uye insulation barrel zvinogadzirwa ne high-density (1.85 g/cm³), fine-grain (grain size <10 μm) isostatic graphite. Isostatic pressing inoita kuti uniform isotropic thermal expansion (CTE), ichidzivirira localized thermal stress, warping, uye mechanical cracking pasi pe thermal cycles dzinodzokororwa.
3. Kupfeka kwekudzivirira kweCVD Silicon Carbide (SiC)
Zvinhu zvakakosha zvinosangana ne silicon vapor uye corrosive purge gases zvinoputirwa ne 50–80 μm dense layer yeChemical Vapor Deposition (CVD) Silicon Carbide (SiC).
- Chidziviriro Chengura:Inodzivirira kusangana kwemakemikari zvakananga pakati pemhepo inoputika yesilicon (SiO2) ne graphite substrate (SiO2 + 2C → SiC2 + CO2), ichibvisa kukanganiswa kwevhu uye kugadzirwa kweguruva recarbon.
- Kunyatsoongorora Geometric:Inochengetedza hunyanzvi hwenzvimbo yekupisa hwakakwana kwenguva yakareba kupfuura 30%.
Kuyerwa kweData reKushanda & Kusimbiswa kweMunda weKuedza
Kuedzwa kwemunda wekuenzanisa kwemwedzi mitanhatu kwakaitwa mumafurni eCZ ane 32-inch scale scale 50 pafekitari yekugadzira TOPCon silicon wafer yetier-1. Pasi apa pane chiyero chekushanda chinoenzanisa zvikamu zvegrafiti zvakajairwa neVeTek Semiconductor's purified thermal field solution:
| Chiyero Chekushanda | Munda weGraphite weThermal Field | VeTek Yakanatswa Graphite Solution |
|---|---|---|
| Graphite Bulk Ash Zviri Mukati | 50 - 100 ppm | ≤ 2 – 5 ppm (Halogen Yakacheneswa) |
| Kusvibiswa Kwesimbi Yese (GDMS) | ~15 – 30 ppm (Fe, Ni, V) | < 0.5 ppm |
| Avhareji Yehupenyu Hwese Hwevatakuri Vevashoma | 85 – 120 μs (Musiyano Mukuru) | 380 – 450 μs (Yakakwirira Nguva Dzose) |
| Nguva Yehupenyu Hwechikamu Chemumunda Wekupisa | Kudhonza Mabhasikoro 60 - 75 | Kudhonza Mabhasikoro 90 - 105 (+30%) |
| Chiyero cheKubudirira kweIngot yeGiredhi reN-Type | 74.5% | 92.5% (+18% Kuvandudzwa kweGoho) |
Mibvunzo Inowanzo bvunzwa (Mibvunzo Inowanzo bvunzwa)
Mubvunzo wekutanga: Chii chinonyanya kukonzera kurasikirwa kwegoho mu 32-inch N-type monocrystalline silicon pulling?
A1:Kurasikirwa kwegoho kunonyanya kukonzerwa nekusvibiswa kwesimbi (kuderedza hupenyu hwemutakuri wezvinhu zvishoma) uye kushanduka kwechimiro chekupisa kwemaheater egrafiti ane dhayamita yakakura, izvo zvinokanganisa interface yekristaro yakasimba-yemvura.
Mubvunzo wechipiri: Kucheneswa kwe halogen kunoita sei kuti dota rive pasi pe5 ppm?
A2:Kucheneswa kwehalogen kunoita kuti zvikamu zvegrafiti zvisvike pakupisa kwakanyanya (>2,400°C) uku zvichipinza magasi echlorine nefluorine. Magasi aya anosangana nezvinhu zvesimbi zvakadzika, zvichiita kuti zvive zvimedu zvesimbi zvinoputika zvinobuda, zvichisiya graphite yakachena kwazvo.
Mubvunzo wechitatu: Ko CVD SiC coating inogona kuputirwazve kana kuiswa kune zvese zvikamu zve graphite thermal field?
A3:Kuputira kweCVD SiC kunonyanya kushandiswa pazvinhu zvinopfekwa zvakanyanya zvakaita sema graphite crucibles, flow guides, heaters, uye insulation barrels. Zvichienderana nekupfekwa kwe substrate, zvimwe zvikamu zvinogona kugadzirwazve uye kuputirwazve, zvichideredza mari yekushandisa.
Mhedziso & Kubvunzana Kwehunyanzvi
Kuvandudza zvinhu zve graphite zvakacheneswa zvakanyanya neCVD SiC protection kunopa nzira yakatwasuka uye inoyerwa yekugadzirisa matambudziko ekukura kwe silicon ine 32-inch N. Nekuvandudzika kwe 18% mu prime yield uye hupenyu hwe thermal field hwakareba ne 30%, vagadziri ve solar wafer vanogona kuwana ROI yakakura.
Gadzirisa Munda Wako weMonocrystalline Thermal Nhasi
Dhawunirodha Full Technical Data Sheet (TDS) kana kuti taura nenyanzvi dzedu dzeinjiniya kuti uwane mutengo wakagadzirirwa iwe.
Gadzirisa Munda Wako weMonocrystalline Thermal Nhasi
Dhawunirodha Full Technical Data Sheet (TDS) kana kuti taura nenyanzvi dzedu dzeinjiniya kuti uwane mutengo wakagadzirirwa iwe.
Nguva yekutumira: Nyamavhuvhu-15-2026