Nheyo yePVT Method Silicon Carbide (SiC) Crystal Growth

Nzira yePVT, ine zita rayo rakazara rekuti Physical Vapor Transportation, inzira yakajairika yekurima silicon carbide (SiC) makristaro ari pasi pekupisa kwakanyanya uye kumanikidzwa kwakanyanya. Musimboti wayo mukuru ndewekupisa silicon carbide powder kuita sublimation patembiricha iri pamusoro pe2300℃ uye munzvimbo ine kumanikidzwa kwakaderera pedyo ne vacuum, zvichigadzira gasi re reaction rine zvikamu zvegasi zvakaita seSi, Si2C, uye SiC2. Nekuda kwekusiyana kwegas-phase partial pressures yezvikamu zveSi neC zvinoumbwa ne solid-phase sublimation reaction, chiyero cheSi/C stoichiometric chinosiyana zvichienderana nekugoverwa kwemunda wekupisa. Saka, zvakakosha kudzora kugoverwa uye kutakurwa kwezvikamu zvegas-phase kuti uve nechokwadi chekuti zvinosvika panzvimbo dzakatarwa dzecrystallization mu growth chamber.

Kuti gas-phase crystallization isagadzire polycrystalline silicon carbide, silicon carbide seed crystals dzinoiswa pamusoro pe growth chamber. Pasi pe drive ye gas-phase supersaturation, gas-phase components dzichagara pamusoro pe seed crystal kuti dzigadzire silicon carbide single crystals. Maitiro ese e reaction anoitika mu closed growth chamber, uko zvese parameters zve reaction system zvakabatana. Chero kuchinja kwemamiriro ekukura kunokanganisa kugadzikana kwe single crystal growth.

Pamusoro pezvo, maumbirwo akasiyana-siyana e silicon carbide single crystals maererano ne crystal orientation yavo anotungamira kune nzira dzakasiyana-siyana dzekubatanidza maatomu uye kubatana, nokudaro zvichigadzira ma crystal form anopfuura 200 e silicon carbide isomers. Simba rekuchinja simba pakati pema crystal form akasiyana rakaderera zvikuru, saka shanduko ye crystal form inogona kuitika mu PVT single crystal growth system, zvichikonzera kusagadzikana kwe target crystal forms uye crystallization defects dzakasiyana-siyana. Nokudaro, zvakakosha kushandisa michina yekuongorora yakatsaurirwa kuti uone crystal form uye zvikanganiso zvakasiyana-siyana zve crystal ingot.

Maitiro ekugadzirira silicon carbide ane zvinodiwa zvakanyanya, zvinonyanya kuratidzwa muzvinhu zvinotevera:

• Kune tsvina yakawanda yezvakatipoteredza mukugadzirwa kweupfu hwesilicon carbide, zvichiita kuti zviome kuwana upfu hwakachena zvakanyanya. Kusakwana kwekuita pakati peupfu hwesilicon neupfu hwecarbon senzvimbo yekuita kunogona kukonzera kusawirirana muhuwandu hweSi/C. Chimiro chekristaro nehukuru hweparticle yeupfu hwesilicon carbide mushure mekugadzirwa kwacho zvakaoma kudzora.
• Kana tembiricha yakakwira iri pamusoro pe2300℃ uye iri pedyo ne vacuum, silicon carbide inoshanduka kuita "solid-gas-solid" uye inodzokororwa muchikamu chegraphite chakavharwa. Maitiro aya ane nguva refu yekukura, akaoma kudzora, uye anowanzo kanganisa senge microtubules uye inclusions.
• Silicon carbide ine marudzi anopfuura mazana maviri akasiyana ekristaro, asi kugadzirwa kunowanzo da chimiro chimwe chete chekristaro. Munguva yekukura, kushandurwa kwechimiro chekristaro kunowanzoitika, zvichikonzera zvikanganiso zvekubatanidzwa kwemarudzi akawanda. Munguva yekugadzirira, zvakaoma kudzora chimiro chimwe chete chekristaro, uye chipingamupinyi chekuchinja simba pakati pemarudzi akasiyana ekristaro chakaderera zvakanyanya, izvo zvinowedzera kuoma kwekudzora. Kudzora maparamendi uye tsvakiridzo yakabatana munguva ino zvinoda mari yakawanda yeR&D, inova imwe yezvikonzero zvekudhura kwakanyanya kwesilicon carbide inoenderana.