Sezvakaratidzwa paMufananidzo 3, kune nzira nhatu huru dzinonangana nekupa SiC single crystal ine mhando yepamusoro uye inoshanda: liquid phase epitaxy (LPE), physical vapor transport (PVT), uye high-temperature chemical vapor deposition (HTCVD). PVT inzira yakanyatso shandiswa yekugadzira SiC single crystal, iyo inoshandiswa zvakanyanya muvagadziri vakuru vewafer.
Zvisinei, maitiro ese matatu ari kuchinja nekukurumidza uye ari kutanga kuvandudzwa. Hazvisati zvave nyore kuziva kuti ndeipi nzira ichashandiswa zvakanyanya mune ramangwana. Kunyanya, SiC single crystal yepamusoro-soro inogadzirwa nekukura kwemvura nekukurumidza kwakashumwa mumakore achangopfuura, kukura kweSiC bulk muchikamu chemvura kunoda tembiricha yakaderera pane iyo ye sublimation kana deposition process, uye inoratidza kugona mukugadzira P-type SiC substrates (Tafura 3) [33, 34].
Mufananidzo 3: Chimiro chenzira nhatu huru dzeSiC single crystal growth: (a) liquid phase epitaxy; (b) physical vapor transport; (c) high-temperature chemical vapor deposition
Tafura 3: Kuenzanisa kweLPE, PVT neHTCVD pakurima makristaro eSiC single [33, 34]
Kukura kwemhinduro itekinoroji yakajairika yekugadzira ma semiconductors akasanganiswa [36]. Kubva kuma1960, vaongorori vakaedza kugadzira kristaro mumhinduro [37]. Kana tekinoroji yangogadzirwa, supersaturation yenzvimbo yekukura inogona kudzorwa zvakanaka, izvo zvinoita kuti nzira yemhinduro ive tekinoroji inovimbisa yekuwana ma ingots ekristaro emhando yepamusoro.
Kuti SiC imwe crystal ikure, Si source inobva kuSi melt yakachena zvikuru nepo graphite crucible ichishanda mabasa maviri: heater uye C solute source. SiC single crystals dzinogona kukura pasi pe stoichiometric ratio yakanaka kana chiyero cheC neSi chiri pedyo ne1, zvichiratidza defect density yakaderera [28]. Zvisinei, pakumanikidzwa kwemhepo, SiC hairatidzi melting point uye inoora zvakananga kuburikidza ne vaporization patembiricha dzinopfuura 2,000 °C. SiC melts, zvichienderana netariro dzedzidziso, inogona kuumbwa chete pasi pesimba rakasimba rinoonekwa kubva kuSi-C binary phase diagram (Mufananidzo 4) iyo pa temperature gradient uye solution system. C yakakwira muSi melt inosiyana kubva pa1at.% kusvika 13at.%. driving C supersaturation, kukura kunokurumidza, nepo C force yakaderera yekukura iri C supersaturation inotongwa ne pressure ye109 Pa uye tembiricha dziri pamusoro pe3,200 °C. Kugona kwayo kuunza nzvimbo yakatsetseka [22, 36-38]. Tembiricha dziri pakati pe1,400 ne2,800 °C, kunyungudika kweC muSi melt kunosiyana kubva pa1at.% kusvika 13at.%. Simba rinosimudzira kukura iC supersaturation inodzorwa netembiricha yekupisa uye system yemhinduro. Kana C supersaturation yakakwira, kukura kwayo kunokurumidza, nepo C supersaturation yakaderera ichiunza nzvimbo yakatsetseka [22, 36-38].
Mufananidzo 4: Dhayagiramu yeSi-C binary phase [40]
Kuisa zvinhu zvesimbi zvinochinja kana zvinhu zvepasi zvisingawanzoitiki hakungodzikisi chete tembiricha yekukura asi kunoita senzira chete yekuvandudza zvakanyanya kunyungudika kwekabhoni muSi melt. Kuwedzerwa kwesimbi dzinochinja, dzakadai seTi [8, 14-16, 19, 40-52], Cr [29, 30, 43, 50, 53-75], Co [63, 76], Fe [77-80], nezvimwewo kana simbi dzinochinja, dzakadai seCe [81], Y [82], Sc, nezvimwewo kuSi melt kunoita kuti kunyungudika kwekabhoni kupfuure 50at.% mumamiriro ari pedyo ne thermodynamic equilibrium. Uyezve, nzira yeLPE yakanakira P-type doping yeSiC, iyo inogona kuwanikwa nekubatanidza Al mu
solvent [50, 53, 56, 59, 64, 71-73, 82, 83]. Zvisinei, kuiswa kweAl kunotungamira mukuwedzera kwe resistivity yeP-type SiC single crystals [49, 56]. Kunze kwekukura kweN-type pasi pe nitrogen doping,
Kukura kwemushonga kunowanzo enderera mumhepo isina gasi. Kunyangwe helium (He) ichidhura kupfuura argon, inofarirwa nenyanzvi dzakawanda nekuda kwekuderera kwayo uye kupisa kwakanyanya (kasere ka argon) [85]. Mwero wekutama uye huwandu hweCr mu4H-SiC zvakafanana pasi pemhepo yeHe neAr, zvaratidzwa kuti kukura pasi peHeresults mukukura kwakanyanya kupfuura kukura pasi peAr nekuda kwekupararira kukuru kwekupisa kwemubati wembeu [68]. Inodzivirira kuumbwa kwevoids mukati mekristaro yakakura uye kuputika kwezvipenyu mumushonga, saka, chimiro chepamusoro chakatsetseka chinogona kuwanikwa [86].
Pepa iri rakatsanangura nezvekugadzirwa, mashandisirwo, uye hunhu hwezvishandiso zveSiC, uye nzira nhatu huru dzekurima SiC single crystal. Muzvikamu zvinotevera, matekiniki ekukura kwemhinduro aripo iye zvino uye maparamendi anoenderana nawo akaongororwa. Pakupedzisira, tarisiro yakakurudzirwa yakakurukura matambudziko nemabasa eramangwana maererano nekukura kukuru kweSiC single crystals kuburikidza nenzira yekugadzirisa.
Nguva yekutumira: Chikunguru-01-2024