Silicon carbide e koahetsoengDiski ea graphite e reretsoe ho lokisa lera le sireletsang carbide ea silicon holim'a graphite ka ho beha mouoane oa 'mele kapa oa lik'hemik'hale le ho fafatsa. Lera le sireletsang carbide ea silicon le lokisitsoeng le ka hokahanngoa ka thata le matrix ea graphite, e leng se etsang hore bokaholimo ba motheo oa graphite bo be bo teteaneng 'me bo se na li-voids, e leng se fang matrix ea graphite thepa e khethehileng, ho kenyeletsoa ho hanyetsa oxidation, ho hanyetsa asiti le alkali, ho hanyetsa khoholeho ea mobu, ho hanyetsa mafome, jj. Hona joale, seaparo sa Gan ke e 'ngoe ea likarolo tse ntle ka ho fetisisa tsa mantlha bakeng sa kholo ea epitaxial ea carbide ea silicon.
Semiconductor sa silicon carbide ke thepa ea mantlha ea semiconductor e sa tsoa ntlafatsoa ea semiconductor ea sebapali se seholo. Lisebelisoa tsa eona li na le litšobotsi tsa ho hanyetsa mocheso o phahameng, ho hanyetsa motlakase o phahameng, maqhubu a phahameng, matla a phahameng le ho hanyetsa mahlaseli. E na le melemo ea lebelo le potlakileng la ho chencha le katleho e phahameng. E ka fokotsa haholo tšebeliso ea matla a sehlahisoa, ea ntlafatsa katleho ea phetoho ea matla le ho fokotsa bophahamo ba sehlahisoa. E sebelisoa haholo-holo puisanong ea 5g, ts'ireletso ea naha le indasteri ea sesole Tšimo ea RF e emeloang ke lifofane le tšimo ea motlakase ea motlakase e emeloang ke likoloi tse ncha tsa matla le "meaho e mecha" e na le menyetla e hlakileng le e kholo ea 'maraka masimong a sechaba le a sesole.
Substrate ea silicon carbide ke thepa ea mantlha ea semiconductor e sa tsoa ntlafatsoa ea wide band gap. Substrate ea silicon carbide e sebelisoa haholo-holo li-elektroniki tsa microwave, li-elektroniki tsa motlakase le masimo a mang.. E pheletsong e ka pele ea ketane ea indasteri ea semiconductor ea lekhalo le leholo 'me ke thepa ea bohlokoa ea mantlha le ea bohlokoa. Karolo ea silicon carbide e ka aroloa ka mefuta e 'meli: e thibelang mocheso ka halofo le e tsamaisang motlakase. Har'a tsona, karolo ea silicon carbide e thibelang mocheso ka halofo e na le resistivity e phahameng (resistivity ≥ 105 Ω· cm). Karolo ea ho thibela mocheso ka halofo e kopantsoeng le lakane ea epitaxial ea gallium nitride e sa tšoaneng e ka sebelisoa e le thepa ea lisebelisoa tsa RF, e sebelisoang haholo-holo puisanong ea 5g, tšireletso ea naha le indasteri ea sesole litšoantšong tse ka holimo; E 'ngoe ke karolo ea silicon carbide e tsamaisang motlakase e nang le resistivity e tlase (leeto la resistivity ke 15 ~ 30m Ω· cm). Epitaxy e homogeneous ea substrate ea silicon carbide e tsamaisang motlakase le silicon carbide e ka sebelisoa e le thepa ea lisebelisoa tsa motlakase. Maemo a mantlha a ts'ebeliso ke likoloi tsa motlakase, litsamaiso tsa motlakase le masimo a mang.
Nako ea poso: Hlakola-21-2022