Iinqwelo zeGraphite ezigqunywe yiSiC, ezigqunywe yiSiC, ezigqunywe yiGraphite substrate yeSemiconductor

I-silicon carbide egqunywe nge-cameraIdiski yegrafiti yenzelwe ukulungiselela umaleko okhuselayo we-silicon carbide kumphezulu wegrafiti ngokufaka umphunga ngokwasemzimbeni okanye ngokwekhemikhali kunye nokutshiza. Umaleko okhuselayo we-silicon carbide olungiselelweyo unokubotshelelwa ngokuqinileyo kwi-graphite matrix, okwenza umphezulu wesiseko segrafiti ube mkhulu kwaye ungabi nazinto ziphumayo, nto leyo enika i-graphite matrix iipropati ezikhethekileyo, kubandakanya ukumelana ne-oxidation, ukumelana ne-asidi kunye ne-alkali, ukumelana nokukhukuliseka, ukumelana nokugqwala, njl. Okwangoku, i-Gan coating yenye yezona zinto ziphambili zokukhula kwe-epitaxial ye-silicon carbide.

I-silicon carbide semiconductor yeyona nto iphambili kwi-wide band gap semiconductor esandula ukuphuhliswa. Izixhobo zayo zineempawu zokuxhathisa ubushushu obuphezulu, ukumelana nombane ophezulu, i-frequency ephezulu, amandla aphezulu kunye nokumelana nemisebe. Inezibonelelo zesantya sokutshintsha ngokukhawuleza kunye nokusebenza kakuhle. Inokunciphisa kakhulu ukusetyenziswa kwamandla emveliso, iphucule ukusebenza kakuhle kokuguqulwa kwamandla kwaye inciphise umthamo wemveliso. Isetyenziswa kakhulu kunxibelelwano lwe-5g, ukhuselo lwesizwe kunye noshishino lomkhosi. Intsimi ye-RF emelwe yi-aerospace kunye nentsimi ye-elektroniki yamandla emelwe zizithuthi zamandla ezintsha kunye "neziseko ezintsha" zinamathuba emarike acacileyo nabalulekileyo kumacandelo oluntu nawomkhosi.

I-silicon carbide substrate yeyona nto iphambili kwi-wide band gap semiconductor esandula ukuphuhliswa. I-silicon carbide substrate isetyenziswa kakhulu kwi-microwave electronics, kwi-power electronics nakwezinye iindawo.. Ikwisiphelo esingaphambili sekhonkco le-wide band gap semiconductor industry chain kwaye sisixhobo esiphambili nesiphambili sesitshixo. I-Silicon carbide substrate inokwahlulwa ibe ziintlobo ezimbini: i-semi insulation kunye ne-conductive. Phakathi kwazo, i-semi insulation silicon carbide substrate inokumelana okuphezulu (i-resistivity ≥ 105 Ω· cm). I-semi insulation substrate edityaniswe ne-heterogeneous gallium nitride epitaxial sheet ingasetyenziswa njengezinto zezixhobo ze-RF, ezisetyenziswa kakhulu kunxibelelwano lwe-5g, ukhuselo lwesizwe kunye noshishino lomkhosi kwezi ziqendu zingasentla; Enye yi-conductive silicon carbide substrate ene-resistivity ephantsi (uluhlu lwe-resistivity yi-15 ~ 30m Ω· cm). I-homogeneous epitaxy ye-conductive silicon carbide substrate kunye ne-silicon carbide ingasetyenziswa njengezinto zezixhobo zamandla. Iimeko eziphambili zesicelo ziimoto zombane, iinkqubo zamandla kunye nezinye iindawo.